• 제목/요약/키워드: EL display

검색결과 212건 처리시간 0.033초

Barrier Layers and Pulsed Laser Annealing Effects on TFEL Device with Cu and Ag co-doped SrS blue Phosphor Layer

  • Nam, Tae-Sung;Liew, Shan-Chun;Koutsogeorgis, Demosthenes C;Cranton, Wayne M
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
    • /
    • pp.910-913
    • /
    • 2003
  • In order to enhance performance, stability, and brightness of inorganic blue-light emitting EL device, barrier layer structure and pulsed laser annealing(PLA) treatment were introduced. The barrier layer structure was utilized for improving brightness of the device and instead of thermal annealing, pulsed laser annealing process was used. From this study, optimum barrier layer thickness and number of pulsed laser irradiation are established.

  • PDF

Electroluminescence characteristics of organic light-emitting diodes with TPD doped PVK as the hole transport layer

  • Shin, Y.C.;Song, J.H.;Lee, C.H.
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
    • /
    • pp.1404-1407
    • /
    • 2005
  • We have fabricated organic light-emitting diodes using poly(N-vinylcarbazole)(PVK) doped with N,N'- diphenyl-N,N'-bis(3-methylphenyl)-[l,l'-biphenyl]- 4,4/-diamine (TPD) as the hole transport layer. TPD molecules act as the trapping sites in PVK and reduce the hole mobility, which can enhance the electronhole balance in the emitting layer, resulting in the enhanced device performance. We have found the optimum ratio of TPD to PVK for the EL efficiency.

  • PDF

Synthesis and Electroluminescent Properties of Fluoranthene Derivatives

  • Kim, Soo-Kang;Park, Jong-Wook
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
    • /
    • pp.621-624
    • /
    • 2007
  • As a new fluoranthene derivative, a synthesis of benzo[k]fluoranthene was suggested, so new blue emitting materials, 7,12-diphenylbenzo[k] fluoranthene [DPBF] and 7,8,10- triphenylfluoranthene [TPF] were synthesized. $EL_{max}$ wavelength of the device using DPBF as an emitting layer was 436 and 454nm in the deepblue region, which are similar values with PL. The device that used DPBF as an emitting layer showed high efficiency of 2.11cd/A and the excellent color coordinate value of (0.161, 0.131) in deep-blue region.

  • PDF

Red Electrophosphorescence from Poly(BP-alt-BCV) Conjugated Polymer Doped with an Ir-Complex

  • Baek, Jeong-Ju;Jeong, Young-Chul;Han, Yoon-Soo;Jeong, Jeon-Woo;Kwon, Young-Hwan;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
    • /
    • pp.599-601
    • /
    • 2004
  • A new blue electroluminescent conjugated polymer, poly(BP-alt-BCV), was prepared by Hornor-Emmons polycondensation and used as a host polymer for the phosphorescent dopant, $(bsn)_2Ir(acac)$. Poly(N-vinylcarbazole) (PVK), known as a blue EL material, was also used for comparison with poly(BP-alt-BCV). Electrophosphorescence of PLEDs with these dopant/host systems was investigated in terms of luminescence, efficiency, emission color, and energy transfer.

  • PDF

Synthesis of Phenanthridine-Containing Conjugated Copolymer and OLED Device Properties

  • Park, Lee-Soon;Jeong, Young-Chul;Han, Yoon-Soo;Kim, Sang-Dae;Kwon, Young-Hwan
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
    • /
    • pp.588-591
    • /
    • 2004
  • Polyazomethine type conjugated copolymers containing phenanthridine units, poly(PZ-PTI), were synthesized by Schiff-base reaction. This new conjugated copolymer exhibited improved solubility in common organic solvents due to the presence of alkyl side chains as well as phenanthridine groups. Double layer (ITO/poly(PZ-PTI)/$Alq_3$/Mg) light emitting diode (LED) exhibited enhanced EL emission and efficiency compared to that of single layer (ITO/poly(PZ-PTI)/Mg) LED. With increasing the thickness of $Alq_3$ layer in double layer (ITO/poly(PZ-PTI)/$Alq_3$/Mg) LED the emission peak gradually shifted to the single layer (ITO/$Alq_3$/Mg) LED, confirming good hole transporting behaviour of the synthesized conjugated copolymer.

  • PDF

Thin-film passivation of the polymer EL device using parylene and its application to the passive matrix PELD system

  • Lee, Cheon-An;Jin, Sung-Hun;Jung, Keum-Dong;Lee, Jong-Duk;Park, Byung-Gook
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
    • /
    • pp.669-672
    • /
    • 2004
  • The thin-film passivation technology using the poly-para-xylylene (parylene) was applied to polymer electroluminescent devices. The fabricated device shows a good luminescent characteristic of maximum 11640 cd/$m^2$. The measured lifetime was reached up to 28 hours, which means the effectiveness of the passivation. Applying the parylene thin-film passivation technique, 10${\times}$10 passive matrix display system was implemented and obtained some still images.

  • PDF

Development of Highly Efficient and Stable Blue Organic Electroluminescent Devices

  • Lee, Meng Ting;Chen, Hsia Hung;Tsai, Chih Hung;Liao, Chi Hung;Chen, Chin H.
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
    • /
    • pp.265-268
    • /
    • 2004
  • We have developed a highly efficient and stable blue organic electroluminescent device (OLED) based on the blue fluorescent p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-Ph) dopant in a morphologically stable high-bandgap host material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN), which achieved an EL efficiency of 9.7 cd/A and 5.5 lm/W at 20 mA/$cm^2$ and 5.7 V with a Commission Internationale d'Eclairage coordinates of(x = 0.16, y = 0.32). This sky blue device which could also alleviate the problematic current induced quenching at high current achieved a half-decay lifetime ($t_{1\;2}$) of 46,000 h at an initial brightness of 100 cd/$m^2$.

  • PDF

Synthesis of Conjugated Copolymers with phenothiazine and Azomethine Units and their Electro-Optic Properties

  • Seo, Hyeon-Jin;Jang, Byeung-Jo;Chang, Jin-Gyu;Park, Lee-Soon
    • Journal of Information Display
    • /
    • 제2권4호
    • /
    • pp.8-14
    • /
    • 2001
  • Three types of conjugated polymers, poly(PZ-Pi), poly(PZ-BPI) and poly(PZ-NPI) were synthesized by Schiff-base reaction. These new conjugated polymers exhibited improved solubility in common organic solvents due to the presence of alkyl side chains as well as azomethine groups, Double layer LEDs made with the synthesized polymers as emitting layer and $Alq_3$, as electron transporting layer exhibited enhanced EL emission and efficiency compared to those of single layer LEDs. Double layer LEDs exhibited gradual shift in the emission peak th the single layer LED, made of only $Alq_3$ as the emitting layer as the thickness of $Alq_3$ layer increased.

  • PDF

유기 EL 성막 공정을 위한 점 증발원의 DSMC 시뮬레이션 (DSMC Simulation of a Point Cell-source for OLED Deposition Process)

  • 전성훈;이응기
    • 반도체디스플레이기술학회지
    • /
    • 제9권3호
    • /
    • pp.11-16
    • /
    • 2010
  • The performance of an OLED fabrication system strongly depends on the design of the evaporation cell-source. Therefore, necessity of the preceding study for cell source development of new concept is becoming increase. A development plan to substitute for experiment is applied as use simulation. In this study interpret behavior of a particle through DSMC techniques, and in this paper presenting a form to make so as to have better performance of the pointtype cell source which had a nozzle.

InGaN/GaN Micro-LED구조를 위한 그래핀 양자점 기반의 산화막 기판 특성 (Characteristics of Graphene Quantum Dot-Based Oxide Substrate for InGaN/GaN Micro-LED Structure)

  • 황성원
    • 반도체디스플레이기술학회지
    • /
    • 제20권3호
    • /
    • pp.167-171
    • /
    • 2021
  • The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.