• ETRI Journal
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• v.26 no.4
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• pp.321-331
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• 2004

In this paper, we propose a new dynamic bandwidth allocation (DBA) algorithm for multimedia services over Ethernet PONs (passive optical networks). The proposed algorithm is composed of a low-level scheduler in the optical network unit (ONU) and a high-level scheduler in the optical line terminal (OLT). The hierarchical DBA algorithm can provide expansibility and efficient resource allocation in an Ethernet PON system in which the packet scheduler is separated from the queues. In the proposed DBA algorithm, the OLT allocates bandwidth to the ONUs in proportion to the weight associated with their class and queue length, while the ONU preferentially allocates its bandwidth to queues with a static priority order. The proposed algorithm provides an efficient resource utilization by reducing the unused remaining bandwidth caused by the variable length of the packets. We also define the service classes and present control message formats conforming to the multi-point control protocol (MPCP) over an Ethernet PON. In order to evaluate the performance, we designed an Ethernet PON system on the basis of IEEE 802.3ah "Ethernet in the first mile" (EFM) using OPNET and carried out simulations. The results are analyzed in terms of the channel utilization, queuing delay, and ratio of the unused remaining bandwidth.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.93-104
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• 2003

The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows ｛10-11｝｛10-10｝(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and ｛10-11｝planes were etched strongly due to the N-polarity and ｛10-10｝ plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with ｛10-11｝plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1296-1299
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• 2002

We implemented a CD signal processor operated on a CAV 48-speed CD-ROM drive into a VLSI. The CD signal processor is a mixed mode monolithic IC including servo-processor, data recovery, data-processor, and I-bit DAC. For servo signal processing, we included a DSP core, while, for CAV mode playback, we adopted a PLL with a wide recovery range. Data processor (DP) was designed to meet the yellow book specification.［2］So, the DP block consists of EFM demodulator, C1/C2 ECC block, audio processor and a block transferring data to an ATAPI chip. A modified Euclid's algorithm was used as a key equation solver for the ECC block To achieve the high-speed decoding, the RS decoder is operated by a pipelined method. Audio playability is increased by playing a CD-DA disc at the speed of 12X or 16X. For this, subcode sync and data are processed in the same way as main data processing. The overall performance of IC is verified by measuring a transfer rate from the innermost area of disc to the outermost area. At 48-speed, the operating frequency is 210 ㎒, and this chip is fabricated by 0.35 um STD90 cell library of Samsung Electronics.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.10 no.2
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• pp.29-37
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• 2001

The application of laser in pipelines was started from the base of using laser in nuclear facilities industries and power plants. Because laser can be delivered to a remote area without any difficulties, the application of laser in many industries can solve many difficulties from limitation of access in danger area and reduced the risks of workers. Therefore, we developed a new experimental technique to measure internal defects of pressure vessels with a combination of shearog-raphy and image processing technique. Conventional NDT methods have been taken relatively much time, money and manpower because of performing as the method of contact with objects to be inspected. But digital shearography is laser-based optical method which allows full-field observation of surface displacement derivatives. This method has many advantages in practical use, such as low sensitivity to environmental noise, simple optical configuration and real time mea-surement. In this paper, we find the optimum shearing magnitude with EFM and experiment and measured internal crack length of the pressure vessels at a real time and estimated the error of the results.

• Journal of Information Processing Systems
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• v.12 no.3
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• pp.468-488
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• 2016

The paper proposes a novel framework for 3D face verification using dimensionality reduction based on highly distinctive local features in the presence of illumination and expression variations. The histograms of efficient local descriptors are used to represent distinctively the facial images. For this purpose, different local descriptors are evaluated, Local Binary Patterns (LBP), Three-Patch Local Binary Patterns (TPLBP), Four-Patch Local Binary Patterns (FPLBP), Binarized Statistical Image Features (BSIF) and Local Phase Quantization (LPQ). Furthermore, experiments on the combinations of the four local descriptors at feature level using simply histograms concatenation are provided. The performance of the proposed approach is evaluated with different dimensionality reduction algorithms: Principal Component Analysis (PCA), Orthogonal Locality Preserving Projection (OLPP) and the combined PCA+EFM (Enhanced Fisher linear discriminate Model). Finally, multi-class Support Vector Machine (SVM) is used as a classifier to carry out the verification between imposters and customers. The proposed method has been tested on CASIA-3D face database and the experimental results show that our method achieves a high verification performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.385-385
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• 2011

Si 또는 반도체 화합물을 기반으로 한 태양전지의 높은 원재료 가격과 복잡한 공정 등의 문제점들을 해결하기 위한 방안으로 반도체성 고분자인 Poly(3-hexylthiophene)(P3HT)과 C60 유도체인 PCBM을 광활성 층으로 이용하여 유기 태양전지(Organic Solar Cell, OSC)를 제작하였다. 하지만 상대적으로 낮은 효율을 갖는 OSC의 단점을 해결하기 위해서 유기물 자체가 갖고 있는 광 안정성, 낮은 전하 이동도 및 광 에너지 흡수대 등의 문제점들의 해결 방안들이 제시되고 있다. 본 연구에서는 광활성 층을 사용한 유기 태양전지의 특성에서 후열처리에 따른 유기 태양전지의 전기적 및 구조적, 광학적인 특성들이 소자의 효율에 끼치는 영향에 대해 분석하였다. 후열 처리 온도에 따른 광활성 층의 구조적인 특성을 분석하기 위해 EFM 이미지와 XRD패턴을 측정하였는데 열처리 후 박막의 전기적인 포텐셜과 결정성 향상의 유기 태양전지의 효율향상에 기여함을 알 수 있었다. 또한 임피던스 분석 장치를 이용해 후열 처리에 따른 소자의 Resistance, Capacitance, I-V 곡선들을 분석한 결과 최적의 조건에서 열처리된 광활성 층은 전하들의 이동을 조절하여 소자 내에서 Capacitance를 증가시키는 것 뿐만 아니라 전극과 유기물 층 사이의 계면 특성을 향상시킴으로써, 소자의 효율을 증가시키는 원인으로 작용함을 확인 하였다.

• Proceedings of the Korean Institute Of Construction Engineering and Management
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• 2007.11a
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• pp.151-156
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• 2007

2006년부터 VE 대상프로젝트가 확대되고, 기본설계와 실시설계단계에 각 1회씩 설계VE를 적용토록 규정되어 설계단계별로 VE가 각각 적용되는 프로젝트가 늘어나고 있다. 그리고 원가절감과 성능향상으로 프로젝트 가치를 높인 설계VE 사례도 많아지고 있다. 하지만 기본설계와 실시설계단계의 조건에 적합한 VE 수행방안에 대한 연구가 미진하고 참여자들의 경험과 이해가 부족하여 단계별 설계VE를 효율적으로 수행하는데 많은 어려움이 있다. 본 연구에서는 기본설계단계와 실시설계단계로 나누어 VE를 수행한 실무사례를 분석하여 기능정의와 아이디어 창출간의 연관관계 및 각 설계단계에서 기능정의를 수행할 때 발생하는 문제점을 도출하였다. 문제점을 해결하고 효과적인 설계VE를 수행하기 위하여 다음과 같은 개선방안을 제시하였다. 첫째, 설계프로세스의 흐름에 맞추어 기본설계에는 공간기능에 대하여하고 실시설계에는 부위에 대하여 기능정의를 수행한다. 이때 상위의 레벨에는 하위의 레벨의 기능정의가 연계되는 기능분류체계 (FBS : Function Breakdown Structure)를 제안하였다. 둘째, 기본설계와 실시설계단계의 기능정의를 수행하는 프로세스 (FDP : Function Definition Process)를 제안하였다. 셋째, 실시설계단계에서는 부위별 요구 성능 평가 매트릭스 (EFM : Element Function Matrix)를 적용하여 기능정의와 아이디어 창출이 연계되도록 하였다. 설계VE의 주요 부분인 기능정의 과정에 대한 문제점을 도출하여 해결방안을 제시함으로써, 보다 효과적인 설계VE의 수행을 기대할 수 있다.

• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.344-350
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• 2010

The improved photocatalytic performance of a carbon/$TiO_2$ composite was studied for the Bisphenol A (BPA) decomposition. Titanium tetraisopropoxide (TTIP) and a rice husk from Korea were heterogeneously mixed as the titanium and carbon sources, respectively, for 3 h at room temperature, and then thermally treated at $600^{\circ}C$ for 1 h in $H_2$ gas. The transmission electron microscopy (TEM) images revealed that the bulk carbon partially covered the $TiO_2$ particles, and the amount that was covered increased with the addition of the rice husk. The acquired carbon/$TiO_2$ composite exhibited an anatase structure and a novel peak at $2{\theta}=32^{\circ}$, which was assigned to bulk carbon. The specific surface area was significantly enhanced to 123~164 $m^2/g$ in the carbon/$TiO_2$ composite, compared to $32.43m^2/g$ for the pure $TiO_2$. The X-ray photoelectron spectroscopy (XPS) results showed that the Ti-O bond was weaker in the carbon/$TiO_2$ composite than in the pure $TiO_2$, resulting in an easier electron transition from the Ti valence band to the conduction band. The carbon/$TiO_2$ composite absorbed over the whole UV-visible range, whereas the absorption band in the pure$TiO_2$ was only observed in the UV range. These results agreed well with an electrostatic force microscopy (EFM) study that showed that the electrons were rapidly transferred to the surface of the carbon/$TiO_2$ composite compared to the pure $TiO_2$. The photocatalytic performance of the BPA removal was optimized at a Ti:C ratio of 9.5:0.5, and this photocatalytic composite completely decomposed 10.0 ppm BPA after 210 min, whereas the pure $TiO_2$ achieved no more than 50% decomposition under any conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.961-965
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• 2010

In this study, we investigated the optical, electrical, and structural properties of the IGZO($In_2O_3:Ga_2O_3:ZnO$=1:9:90 wt.%) thin films prepared by RF-magnetron sputtering system under various substrate temperatures. All of the IGZO thin films shows an average transmittance of over the 80% in visible range. Most of all, deposited IGZO thin film at $100^{\circ}C$ substrate temperature have ZnO (002) of main growth peak and 17.02 nm of increased grains. And also IGZO thin film have low resistivity($1.35{\times}10^{-3}\;\Omega{\cdot}cm$), high carrier concentration($6.62{\times}10^{20} cm^{-3}$) and mobility($80.1 cm^2$/Vsec). IGZO thin film have 2.08 mV at surface potential of electric force microscopy(EFM). We suggest that pre-annealing at $100^{\circ}C$ can be applied for improving optical, electrical and structural properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.269-269
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• 2010

현재 화석연료의 부족으로 인한 에너지 수급의 불균형, 자연환경의 파괴로 인해 대체에너지 개발이 절실히 요구되고 있다. 이러한 문제점을 극복하기 위한 방안으로 태양전지에 대한 관심이 높아지고 있다. 기존 결정형 실리콘 태양전지와 비교해 화합물 반도체를 기반으로 한 박막형 태양전지는 친환경적인 제품이면서 제조원가를 절감시킬 수 있고, 반영구적인 수명 및 값싼 기판을 활용할 수 있는 장점으로 인해 활발한 연구가 진행되고 있다. 본 실험에서는 Co-sputtering법으로 제작된 $CuInSe_2$(CIS)를 광활성층으로 한 박막형 태양전지에서 실온 ${\sim}550^{\circ}C$의 다양한 온도에서 후열 처리된 CIS 박막들의 전기적, 구조적, 광학적인 특성들을 분석하였다. 제작된 박막들 가운데 Hall Effect 측정결과 $550^{\circ}C$에서 후열 처리된 박막이 가장 높은 1.227E+22(/$cm^3$)의 캐리어 농도와 1.581(cm/$V{\cdot}s$)의 홀 이동도를 가지며, 3.092E-4(${\Omega}{\cdot}cm$)의 가장 낮은 비저항 값을 갖는 것으로 나타났다. EFM 측정결과 열처리 하지 않은 박막에 비해 후열처리된 CIS 박막의 전도성이 전체적으로 높아졌다. 특히, $550^{\circ}C$에서 후열 처리된 박막의 표면은 전체적으로 전기 전도성이 높은 결정립들이 골고루 분포하며 가장 높은 표면 포텐셜 에너지 값을 갖는 것으로 나타났다. 박막들의 구조적 특성을 분석하기 위해 SEM과 XRD를 측정한 결과, $350^{\circ}C$에서 후열 처리된 박막들은 열처리 되지 않은 박막과 비교해 표면형상 변화가 일어났으며, $550^{\circ}C$에서 후열 처리된 CIS 박막들은 $CuInSe_2$(112) 방향이 향상된 chalcopyrite-like 구조를 가지면서 박막 밀도가 높고 결정립의 크기가 증가된 것을 확인하였다. 이는 박막 성장시 기판온도의 상승으로 CIS 박막 내에서 셀레늄의 확산과 상호작용으로 3원 화합물이 재결정화되어 구조적인 특성향상에 기여하였기 때문이다. 결론적으로 본 연구는 CIS 광활성층에서 후열 처리의 효과들 뿐만아니라 박막 증착시 co-sputtering법을 이용함으로써 증착시간의 감소 및 대면적화와 대량생산으로도 적용 가능함을 제시하고자 한다.