• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.601-608
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• 1994

Aluminum oxide thin films were deposited on p-type(100) silicon substrates by electron cyclotron resonance plasma enhanced CVD(ECR-PECVD) using TMA[Al(CH3)3] and oxygen as reactant gases at 16$0^{\circ}C$ or lower temperatures. The aluminum oxide films deposited by ECR-PECVD have the amorphous structure with the refractive index of 1.62~1.64 and the O/Al ratio of 1.6~1.7. Oxygen flow rate necessary for the stable deposition of the aluminum oxide films increases as the deposition temperature increases. It was found from the OES analysis that the ECR plasma had les cooling effect by introducing the TMA reactant gas in comparison with the RF plasma. The properties of aluminum oxide films prepared by ECR-PECVD were compared with those prepared by RF-PECVD. The ECR-PECVD aluminum oxide films have the higher refractive indices, the lower contents of impurities (H and C) and the stronger wet etch resistance than those deposited by RF-PECVD.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.131.2-131.2
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• 2007

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.1-6
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• 2000

X-ray lithography mask with SiC membrane and Ta absorber patterns has been fabricated using ECR plasma CVD, d.c. magnetron sputtering, and ECR plasma etching. The stress of stoichiometric SiC film was adjusted by rapid thermal annealing under $N_2$, ambient. Adjusting the working pressure during sputtering process resulted in a near-zero residual stress, reasonable density, and smooth surface morphology of Ta film. Cl-based plasma showed a good etching characteristics of Ta, and two-step etching process was implemented to suppress microloading effect fur sub-quarter $\mu\textrm{m}$ patterning.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.98-104
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• 1999

In this work, we investigated hydrogen content, bond structure, and electrical properties of a-Si:H films prepared by ECR plasma CVD as a function of pressure. In general, the photo sensitivity of a-Si:H films prepared by CVD method decreases as the deposition rate increases, but the photo sensitivity of a-Si:H films prepared by ECR plasma deposition method increases as the deposition rate increases. In the same condition of microwave power, the ratio of $SiH_4/H_2$, and pressure, though film thickness increases linearly with deposition time and hydrogen content in the film is constant, photo conductivity can be decreased because $SiH_2$ bond is made more than SiH bond in the short reaction time. According to increase pressure in the chamber, SiH bond in the film increase and optical energy gap decrease. So, photo conductivity can be increased. But photo sensitivity decreased as dark conductivity increase. It must be grown in the condition of low pressure and hydrogen gas for taking the a-Si:H film of high quality.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.107-107
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• 1997

• Proceedings of the Korean Vacuum Society Conference
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• 1994.06a
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• pp.155-156
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• 1994

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.148-148
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• 2002

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.177-185
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• 2005

Fatigue characteristics of lead zirconate titanate (PZT) films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) were investigated. The fatigue characteristics were investigated with respect to PZT film thickness, domain structure, fatigue pulse height, temperature, electrode materials and electrode configurations. The used top and bottom electrode materials were Pt and $RuO_2$. In the fatigue characteristics with fatigue pulse height and PZT film thickness, the fatigue rates are independent of the applied fatigue pulse height at the electric field regions to saturate the P-E hysteresis and polarization $(P^*,\;P^A)$ characteristics. The unipolar and bipolar fatigue characteristics of PZT capacitors with four different electrode configurations $(Pt//Pt,\;Pt//RuO_2,\;RuO_2//Pt,\;and\;RuO_2//RuO_2)$ were also investigated. The polarization-shifts during the unipolar fatigue and the temperature dependence of fatigue rate suggest that the migration of charged defects should not be expected in our CVD-PZT films. It seems that the polarization degradations are attributed to the formation of charged defects only at the Pt/PZT interface during the domain switching. The charged defects pin the domain wall at the vicinity of Pt/PZT interface. When the top and bottom electrode configurations are of asymmetric $(Pt//RuO_2,\;RuO_2//Pt)$, the internal fields can be generated by the difference of charged defect densities between top and bottom interfaces.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.417-422
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• 1997

본 연구에서는 LPCVD, PECVD, ECR plasma CVD방법을 이용하여 x선 노광 공정용 마스크의 투과막재료로써의 실리콘질화막의 증착과 그의 물성에 관하여 실험하였다. X선 노광 마스크용 투과막의 재질로써 요구되는 적정인장응력에 가지는 증착조건으로 실리콘질화막을 1$\mu\textrm{m}$정도의 두께로 증착하였으며 이 조건에서의 물성을 SIMS, XPS, ESR, AFM, spectrophoto-metry를 이용하여 비교 분석하였다. ECR plasma CVD방법으로 얻은 실리콘 질화막은 화학양론적 조성(Si/N=0.75)에 근접하는 막을 얻을 수 있었으며 표면 평활도와 가시광투과도가 가장 우수한 결과를 얻었다. 저온 증착법인 PECVD로 얻은 막은 Si/N비가 약 0.86정도이고 산소와 수소의 불순물함량이 가장 높게 나타났다. SiH$_{2}$CI$_{2}$를 이용한 LPCVD막의 경우는 Si-rich조성을 가지지만 수소 불순물의 함량이 가장 작게 나타났고 표면거칠기는 가장 나쁘게 나타났다. 그러나 위의 방법으로 얻은 실리콘 질화막의 최대 가시광투과도는 633nm파장에서 모두 90%이상의 값을 나타내었고, 또한 표면 평활도도 0.64-2.6nm(rms)로 현재 연구되고 있는 다른 X선 투과막재료보다 월등히 우수한 결과를 보였다.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.130-137
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• 1995

Deopsition of thermal quality SiO2 using a high density plasma ECR CVD process has been demonstrated to give void and seam free gap fill of high aspect ratio metallization structures with a simple oxygen-silane chemistry. This is achieved by continuous sputter etching of the film during the deposition process. A two-step process is utilized to deposit a composite layer for higher manufacturing efficiency. The first step, which has a deposition rate of approximately 0.5 $\mu$m/min., is used to provide complete gap fill between the metal lines. The second step, which has a deposition rate of up to 1.5 $\mu$m/min., is used to deposit a total thickness of 2.0$\mu$m for the intermetal dielectric film. The topography of this composite film is very compatible with subsequent chemicl mechanical polishing(CMP) planarization processing.