• Journal of Haehwa Medicine
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• v.14 no.1
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• pp.43-49
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• 2005

One case of patient with urinary retention was reported in this clinical study. After the study, the results were as follows: 1. Anulesis belongs to l$\acute{o}$ng-bi(癃閉) in oriental medicine and the patient of this case belongs to chronic anulesis. 2. The patient of this case was thought as broke out anuresis by vesical nerve palsy of diabetic bladder pathy and sequela of stroke, and ischuria of long lie down 3. The patient of this case changeable process is supposed to urinary frequency, 'bi(閉)', 'l$\acute{o}$ong(癃)', urinary incontinence and urinary frequency. 4. First time of drug treatment is GAMIPHALJENG-SAN(ji$\bar{a}$-w$\grave{e}$i-b$\bar{a}$-h$\bar{e}$ng-s$\check{a}$n) by oral administration that action of alleviate a fever, water utilization and metaphase, convalescence time of drug treatment is PHALMIWANGAMI (b$\bar{a}$-w$\grave{e}$i-w$\acute{a}$n-ji$\bar{a}$-w$\grave{e}$i), YIKLUENG-TANG(yi-ling-t$\bar{a}$ng), CHUKYOO-TANG(s$\grave{u}$-ni$\grave{a}$o-t$\bar{a}$ng) that action of recreation. 5. Accupuncture treatment is s$\bar{a}$n-x$\bar{i}$ng-xuw$\acute{e}$, zw$\acute{u}$-s$\bar{a}$n-li, qi-h$\check{a}$i, gu$\bar{a}$n-yu$\acute{a}$n, zh$\bar{o}$ng-ji by mild supplementing and reducing manipulation of needle and heat accupuncture is qi-h$\check{a}$i, gu$\bar{a}$n-yu$\acute{a}$n, zh$\bar{o}$ng-ji-xu$\acute{e}$. 6. The other treatment is a sitz bath that prevent of urinary tract infection, and relieve of initial acute auresis by using of urethral catheterization.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.27.1-27.1
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• 2011

The recent extensive research of one-dimensional (1D) nanostructures such as nanowires (NWs) and nanotubes (NTs) has been the driving force to fabricate new kinds of nanoscale devices in electronics, optics and bioengineering. We attempt to produce silicon oxide nanowires (SiOxNWs) in a simple way without complicate deposition process, gaseous Si containing precursors, or starting material of $SiO_2$. Nickel (Ni) nanoparticles (NPs) were applied on Si wafer and thermally treated in a furnace. The temperature in the furnace was kept in the ranges between 900 and $1,100^{\circ}C$ and a mixture of nitrogen ($N_2$) and hydrogen ($H_2$) flowed through the furnace. The SiOxNWs had widths ranging from 100 to 200 nm with length extending up to ~10 ${\mu}m$ and their structure was amorphous. Ni NPs were acted as catalysts. Since there were no other Si materials introduced into the furnace, the Si wafer was the only Si sources for the growth of SiOxNWs. When the Si wafer with deposition of Ni NPs was heated, the liquid Ni-Si alloy droplets were formed. The droplets as the nucleation sites induce an initiation of the growth of SiOxNWs and absorb oxygen easily. As the droplets became supersaturated, the SiOxNWs were grown, by the reaction between Si and O and continuously dissolving Si and O onto NPs. Photoluminescence (PL) showed that blue emission spectrum was centered at the wavelength of 450 nm (2.76 eV). The details of growth mechanism of SiOxNWs and the effect of Ni NPs on the formation of SiOxNWs will be presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.191-196
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• 2023

In this paper, for the application of ultrasonic cleaners for cleaning dentures and transparent braces, Pb(Mn_1/3Nb_2/3)O₃-Pb(Ni_1/3 Nb_2/3)O₃-Pb(Zr,Ti)O₃ [PMN-PNN-PZT] system ceramics were manufactured and their dielectric and piezoelectric properties were investigated. Overall the best properties suitable for the device applications such as ultrasonic cleaner were obtained from the ceramics sintered at 920℃: bulk density of 7.8 g/cm³, the dielectric constant (ε_r) of 1,689, piezoelectric charge constant (d₃₃) of 433 pC/N, planar electromechanical coupling factor (k_p) of 0.64, mechanical quality factor (Qm) of 835, S₁₁^E of 13.37 (10^-12 N/m²), and Curie temperature of 315℃ By using the physical properties of this composition, the ultrasonic cleaner was designed and simulated using the commercial ATILA software. For the three-layered ceramics with the dimension of 25 mm × 25 mm × 2.5mm, an excellent displacement of 8.998 10^-3 m) and the sound pressure of 147.68 dB were recorded.

• Current Photovoltaic Research
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• v.11 no.2
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• pp.39-43
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• 2023

Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VO_x, NiO_x, and CuI_x thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.358-359
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• 2012

최근 분극 특성이 상이한 무분극 GaN 에피성장에 관한 심도 있는 연구와 함께 전자-전공 캐리어의 주입 및 캐리어의 거동, 방출되는 편광 특성 및 다양한 물리적 특성들에 대해 보고되고 있으며, 광학적 특성 및 물리적 특성의 확보를 위한 많은 연구가 활발히 진행 중이다 [1]. GaN의 ohmic 접촉(ohmic contact)의 형성은 발광 다이오드(light emitting diode), 레이저 다이오드(Laser), 태양전지(solar cell)와 같은 고신뢰도, 고효율 광전자 소자를 제조하기 위해서는 매우 중요하다 [2]. 그러나 이와 함께 병행 되어야 할 무분극 p-GaN 의 ohmic contact에 관한 연구는 많이 이루어지고 있지 않는 실정이다. 따라서 본 논문에서는 r-plane 사파이어 기판 상에 성장된 p-GaN에서의 ohmic 접촉 형성 연구를 위하여 Ni/Au ohmic 전극의 접촉저항 특성을 연구하였다. 본 실험에서는 성장된 a-plane GaN의 Hole농도가 $3.09{\times}1017cm3$ 인 시편을 사용하였다. E-beam evaporation 장비를 이용하여 Ni/Au를 각각 20 nm 그리고80 nm 증착 하였으며 비접촉저항을 측정하기 위해 Circle-Transfer Length Method (C-TLM) 패턴을 사용하였다. 샘플은 RTA (Rapid Thermal Annealing)를 사용하여 $300^{\circ}C$에서 $700^{\circ}C$까지 온도를 변화시키며 전기적 특성을 비교하여 그림 1(a) 나타내었다. 그림에서 알 수 있듯이 $400^{\circ}C$에서 가장 낮은 비접촉저항 값인 $6.95{\times}10-3{\Omega}cm2$를 얻을 수 있음을 발견하였다. 이 때의 I-V curve 도 그림1(b)에 나타낸 바와 같이 열처리에 의해 크게 향상됨을 알 수 있다. 그러나, $500^{\circ}C$ 이상 온도를 증가시키면 다시 비접촉 저항이 증가하는 것을 관찰하였다. XRD (x-Ray Diffraction) 분석을 통하여 $400^{\circ}C$ 이상열처리 온도가 증가하면 금속 표면에 $NiO_2$가 형성되며, 이에 따라 오믹특성이 저하 된다고 사료된다. 또한 $Ni_3N$의 존재를 확인 하였으며 이는 nonpolar surface의 특성으로 인해 nitrogen out diffusion 현상이 동시에 발생하여 계면에는 dopant로 작용하는 질소 공공을 남기고 표면에 $Ni_3N$을 형성하여 ohmic contact의 특성이 저하되기 때문인 것으로 사료된다.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3695-3702
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• 2013

A nickel(II) complex $[Ni(H_2biim)_2(H_2O)_2](ClO_4)_2{\cdot}H_2O$ (1) of biimidazole ligand has been synthesized and characterized (Where $H_2biim$ = 2,2'-biimidazole). The single crystal X-ray diffraction of the complex shows a dimeric structure with six coordinated psudo-octahedral geometry. The cyclic voltammograms of complex exhibited one quasireversible reduction wave ($E_{pc}=-0.61V$) and an irreversible oxidation wave ($E_{pa}=1.28V$) in DMF solution. The interaction of the complex with Calf-Thymus DNA (CT-DNA) has been investigated by absorption and fluorescence spectroscopy. The complex is an avid DNA binder with a binding constant value of $1.03{\times}10^5M^{-1}$. The results suggest that the nickel(II) complex bind to CT-DNA via intercalative mode and can quench the fluorescence intensity of EB bind to CT-DNA with $K_{app}$ value of $3.2{\times}10^5M^{-1}$. The complex also shown efficient oxidative cleavage of supercoiled pBR322 DNA in the presence of hydrogen peroxide as oxidizing agent. The DNA cleavage by complex in presence of quenchers; viz. DMSO, KI, $NaN_3$ and EDTA reveals that hydroxyl radical or singlet oxygen mechanism is involved. The complex showed invitro antimicrobial activity against four bacteria and two fungi. The antimicrobial activity was nearer to that of standard drugs and greater than that of the free ligand.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.509-515
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• 2007

In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.163-168
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• 2004

We prepared ultra thin film structure of Si(100)/ $SiO_2$(200 nm)/Ta(5 nm)/Ni$_{80}$Fe$_{20/(l～15 nm)}$Ta(5 nm) using an inductively coupled plasma(ICP) helicon sputter. Magnetic properties and cross-sectional microstructures were investigated with a superconduction quantum interference device(SQUID) and a transmission electron microscope(TEM), respectively. We report that NiFe films of sub-3 nm thickness show the B$_{bulk}$ = 0 and B$_{surf}$=-3 ${\times}$ 10$^{-7}$(J/$m^2$). Moreover, Curie temperature may be lowered by decreasing thickness. Coercivity become larger as temperature decreased with 0.5 nm - thick Ta/NiFe interface intermixing. Our result implies that effective magnetic properties of magnetoelastic anisotropy, saturation magnetization, and coercivity may change abruptly in nano-thick films. Thus we should consider those abrupt changes in designing nano-devices such as MRAM applications.

• Ocean and Polar Research
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• v.41 no.3
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• pp.121-133
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• 2019

Natural variability associated with a variety of large-scale climate modes causes regional differences in sea level rise (SLR), which is particularly remarkable in the Pacific Ocean. Because the superposition of the natural variability and the background anthropogenic trend in sea level can potentially threaten to inundate low-lying and heavily populated coastal regions, it is important to quantify sea level variability associated with internal climate variability and understand their interaction when projecting future SLR impacts. This study seeks to identify the dominant modes of sea level variability in the tropical Pacific and quantify how these modes contribute to regional sea level changes, particularly on the two strong El $Ni{\tilde{n}}o$ events that occurred in the winter of 1997/1998 and 2015/2016. To do so, an adaptive data analysis approach, Ensemble Empirical Mode Decomposition (EEMD), was undertaken with regard to two datasets of altimetry-based and in situ-based steric sea levels. Using this EEMD analysis, we identified distinct internal modes associated with El $Ni{\tilde{n}}o$-Southern Oscillation (ENSO) varying from 1.5 to 7 years and low-frequency variability with a period of ~12 years that were clearly distinct from the secular trend. The ENSO-scale frequencies strongly impact on an east-west dipole of sea levels across the tropical Pacific, while the low-frequency (i.e., decadal) mode is predominant in the North Pacific with a horseshoe shape connecting tropical and extratropical sea levels. Of particular interest is that the low-frequency mode resulted in different responses in regional SLR to ENSO events. The low-frequency mode contributed to a sharp increase (decrease) of sea level in the eastern (western) tropical Pacific in the 2015/2016 El $Ni{\tilde{n}}o$ but made a negative contribution to the sea level signals in the 1997/1998 El $Ni{\tilde{n}}o$. This indicates that the SLR signals of the ENSO can be amplified or depressed at times of transition in the low-frequency mode in the tropical Pacific.