• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.743-747
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• 2007

There has been steady effect for the development of the electron-beam lithography technologies for the circuit patterning of the future semiconductor devices. In this study, we have performed a Monte-Carlo simulation whore $1{\times}10^4$ electrons with various kinetic energies (100eV, 300eV, 500eV, 700eV, and 1000eV) were shot into polymethyl methacrylate(PMMA) resist of 100-nm thickness. The penetration depth of each electron beam in the resist layer were analyzed using Gaussian analysis method.

• Applied Chemistry for Engineering
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• v.24 no.4
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• pp.396-401
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• 2013

Alternating copolymers, poly[9-(2-octyl-dodecyl)-9H-carbazole-alt-4,7-di-thiophen-2-yl-benzo[1,2,5]thiadiazole] (PCD20TBT) and poly[9,10-bis-(2-octyl-dodecyloxy)-phenanthrene-alt-4,7-di-thiophen-2-yl-benzo[1,2,5]thiadiazole] (PN40TBT), were synthesized by the Suzuki coupling reaction. The copolymers were soluble in common organic solvents such as chloroform, chlorobenzene, 1,2-dichlorobenzene, tetrahydrofuran and toluene. The maximum absorption wavelength and the band gap of PCD20TBT were 535 nm and 1.75 eV, respectively. The maximum absorption wavelength and the band gap of PN40TBT were 560 nm and 1.97 eV, respectively. The HOMO and the LUMO energy level of PCD20TBT were -5.11 eV and -3.36 eV, respectively. As for PN40TBT, the HOMO and the LUMO energy level of PCD20TBT were -5.31 eV and -3.34 eV, respectively. The polymer solar cells (PSCs) based on the blend of copolymer and PCBM (1 : 2 by weight ratio) were fabricated. The power conversion efficiencies of PSCs based on PCD20TBT and PN40TBT were 0.52% and 0.60%, respectively. The short circuit current density ($J_{SC}$), fill factor (FF) and open circuit voltage ($V_{OC}$) of the device with PCD20TBT were $-1.97mA/cm^2$, 38.2% and 0.69 V. For PN40TBT, the $J_{SC}$, FF, and $V_{OC}$ were $-1.77mA/cm^2$, 42.9%, and 0.79 V, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.969-974
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• 2003

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.8
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• pp.2012-2021
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• 1995

An experimental study was performed for the analysis of dynamic characteristics of refrigeration system by controlling the evaporator superheat. Experimental data have been taken utilizing two different devices, thermostatic expansion valve(T.E.V.) and electronic expansion valve(E.E.V.), for the control of the evaporator superheat. The ranges of parameters, such as superheat, mass flow rate of refrigerant and inlet temperature of evaporator were 5-30.deg. C 90-170 kg/h and 10-25.deg. C, respectively. The data taken from the T.E.v.and E.E.v.were discussed with the control of the superheat, pressure drop, refrigerating capacity, compression work, evaporating temperature, condensing temperature and COP affecting performance characteristics of refrigeration system. In case of the refrigerant flow control with T.E..V., the superheat and pressure drop of the evaporator varied periodically, but the control with E.E.V., the parameters were very stable. In E.E.v.control, refrigerating capacity, compression work and evaporating temperature were decreased with increasing superheat, and the highest COP was obtained in the range of superheat from 5.deg. C to 15.deg. C.

• Journal of the Korean Mathematical Society
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• v.48 no.1
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• pp.105-115
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• 2011

Let f be a function which assigns a positive integer f(v) to each vertex v $\in$ V (G), let r, s and t be non-negative integers. An f-coloring of G is an edge-coloring of G such that each vertex v $\in$ V (G) has at most f(v) incident edges colored with the same color. The minimum number of colors needed to f-color G is called the f-chromatic index of G and denoted by ${\chi}'_f$(G). An [r, s, t; f]-coloring of a graph G is a mapping c from V(G) $\bigcup$ E(G) to the color set C = {0, 1, $\ldots$; k - 1} such that |c($v_i$) - c($v_j$ )| $\geq$ r for every two adjacent vertices $v_i$ and $v_j$, |c($e_i$ - c($e_j$)| $\geq$ s and ${\alpha}(v_i)$ $\leq$ f($v_i$) for all $v_i$ $\in$ V (G), ${\alpha}$ $\in$ C where ${\alpha}(v_i)$ denotes the number of ${\alpha}$-edges incident with the vertex $v_i$ and $e_i$, $e_j$ are edges which are incident with $v_i$ but colored with different colors, |c($e_i$)-c($v_j$)| $\geq$ t for all pairs of incident vertices and edges. The minimum k such that G has an [r, s, t; f]-coloring with k colors is defined as the [r, s, t; f]-chromatic number and denoted by ${\chi}_{r,s,t;f}$ (G). In this paper, we present some general bounds for [r, s, t; f]-coloring firstly. After that, we obtain some important properties under the restriction min{r, s, t} = 0 or min{r, s, t} = 1. Finally, we present some problems for further research.

• Journal of the Korean Chemical Society
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• v.28 no.1
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• pp.26-33
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• 1984

The rate constants for the following vibration-to-vibration energy exchange reactions have been calculated theoretically for the temperature range from 300 to 800K and for n = 2 to 5. HF(v=n) + DF(v=0) ${\to}$ HF(v=n-l) + DF(v=l) + ${\Delta}E$(a) DF(v=n) + HF(v=0) ${\to}$ DF(v=n-l) + HF(v=l) + ${\Delta}E$(b) In calculation the loosely-held, non-rigid dimer collision model and semiclassical method have been employed. The results show that the rate constants for the processes (a) are much greater than those for the processes (b). Also, it is found that the rate constants for the processes (a) increase with decreasing temperature and with increasing quantum number, while those for the processes (b) show the opposite tendencies. These findings are explained in terms of the sign and magnitude of the energy mismatch, ${\Delta}E$.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.61.1-61.1
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• 2011

We report on a detailed study on gap-state distribution in thin amorphous silicon layers(a-Si:H) with film thickness between 5 nm and 20 nm c-Si wafers performed by UV excited photoelectron spectroscopy(UV-PES). We measured how the work function, the gap state density, the position of the Fermi-level and the Urbch-energy depend on the layer thickness and the doping level of the ultra thin a-Si:H(n) layer. It was found, that for phosphorous doping the position of the Fermi level saturates at $E_F-E_V$=1.47 eV. This is achieved at a gas phase concentration of 10000 ppm $PH_3$ in the $SiH_4/H_2$ mixture which was used for the PECVD deposition process. The variation of the doping level from 0 to 20000 ppm $PH_3$ addition results in an increase of the Urbach energy from 65 meV to 101 meV and in an increase of the gap state density at midgap($E_i-E_V$=0.86eV) from $3{\times}10^{18}$ to $2{\times}1019cm^{-3}eV^{-1}$.

• Journal of Photoscience
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• v.7 no.1
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• pp.27-30
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• 2000

The Photoluminescence (PL) measurement results of a very good quality GaN sample grown by metalorganic chemical vapor deposition (MOCVD) are reported. The temperature dependences of peak position, emission intensity, and the full width at half maximum (FWHM) of free-exciton (FX) A and B are presented. Our results show the fast thermal quenching of FX transition intensities and predominantly acoustic phonon scattering of emission line broadening. The transition-energy-shift following the Varshni's empirical equation, and by using it to fit the data, E$\_$A1/(T) = 3.4861 eV -6.046 $\times$ 10$\^$-4/T$^2$ (620.3+ T) eV, E$\_$B1/(T) = 3.4928 eV -4.777 $\times$ 10$\^$-4/T$^2$ / (408.2+ T) eV and E$\_$A2/ = 3.4991 eV -4.426 $\times$ 10$\^$-4/ T$^2$ / (430.6+ T) eV for A(n=1), B(n=1), and A(n=2) are obtained respectively.

• Journal of Plant Biology
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• v.29 no.1
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• pp.53-65
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• 1986

The montane forests of Ulreung Island, Korea, were investigated by the ZM school method. By comparing the montane forests of this island with those of Korean Peninsula and of Japan, a new order, F a g e t a l i a m u l t i n e r v i s, a new alliance, F a l g i o n m u l t i n e r v i s, a new association, H e p a t i c o-F a g e t u m m u l t i n e r v i s and Rhododendron brachycarpum-Pinus parviflora community were recognized. The H e p a t i c o - F a g e t u m m u l t i n e r v i s was further subdivided into four subassociations; Subass. of Sasa kurilensis, Subass. of Rumohra standishii, Subass. of Rhododendron brachycarpum and Subass. of typicum. Each community was described in terms of floristic, structural and environmental features.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.553-557
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• 1999

In order to investigate the optical properties of the $Al_XGa_{1-X}N/GaN$ thin film grown by metalorganic chemical vapor deposition (MOCVD) method, the photoluminescene (PL), photocurrent (PC) and persistent photoconductivity (PPC) measurements were carried out at room temperature. The band gap of the $A1_x$$Ga_{1-x}$N/GaN was determined to 3.70 eV by the PL and PC measurements. The PC measurement on the light illumination from the top of the $A1_x$$Ga_{1-x}$N/GaN thin film provides peaks at 3.70, 3.43, and around 2.2 eV. The PC spectrum by the illumination passing through from the substrate of the sample can be shown at 3.43 eV together with a broad tail band from the GaN band edge to around 2.23 eV. The photocurrent quenching and anomalous PPC decay observed in PPC measurements indicate that metastable electron states are fomed in the band gap of GaN layer to trap electrons which can be tunneled the potential barrier for long recovery time.