• 한국안광학회지
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• 제4권2호
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• pp.141-146
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• 1999

단결정 $LaAlO_3$의 열자극발광을 온도, 파장, 발광강도의 3차원 데이터로 측정하였고, 이를 분석하였다. $LaAlO_3$는 YBCO(초전도체) 또는 각종 반도체의 성장기판으로 많이 활용되고 있다. 온도, 파장, 발광강도의 3차원 데이터를 얻으므로써 활성화 에너지 뿐만 아니라, 기존의 온도대 발광곡선(glow curve) 분석에서 그 정보를 알기 힘들었던, 재결합준위(recombination center)의 에너지를 결정할 수 있었다. 이는 특정 피크온도에서의 파장대 발광강도 데이터를 Franck-Condon 모델을 이용하여 곡선 춤법으로 분석하여 얻을 수 있다. 온도대 발광강도곡선(glow curve)을 수치해석에 의한 곡선맞춤법으로 분석한 결과 세 개의 발광곡선이 중첩되어 있음을 알게되었으며, 각각에 대한 활성화 에너지는 0.54eV, 0.91eV, 1.02eV 였다. 재결합준위의 에너지는 2.04eV, 2.75eV 였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.235-238
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• 2006

Interface formation between $12CaO{\cdot}7Al_2O_3(C12A7:e^-)$ and Alq3 was investigated using in-situ ultra-violet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). The work function and vacuum level shift of $C12A7:e^-$ were change by different surface treatment from 2.6eV to 4.2eV. Also vacuum level shift $(\Delta)$ at the interface were from +0.3eV to -0.3eV.

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.472-477
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• 1995

The degree of the photodoping process in Ag(100[.angs.])/a-Se$_{75}$Ge$_{25}$(1500[.angs.]) films has measured as a function of the photon energy between 1.5[eV] and 2.9[eV] with the exposing time. The "window" characteristics of Ag occur at 3400[.angs.] (3.65[eV]) and Ag is almost transparent in this region. It is shown that transmittance is almost constant (40-50%) for the wavelength ranges of our experiment. It is found that the energy gap of a unexposed a-Se$_{75}$Ge$_{25}$ film is 1.81[eV]. Ag photodoping process results in the photodarkening effect which the absorption edge shifts to the long wavelength. Especially, very large band shift (-0.3[eV]) is obtained by exposing He-Ne laser(6328[.angs.]).. We have obtained "the U-type property" for Ar He-Ne and semiconductor laser. It is associated with the variation of energy gap(E$_{g}$) with photo-dose and substantially is explained by DWP model.l.gap(E$_{g}$) with photo-dose and substantially is explained by DWP model.

• 한국결정성장학회지
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• 제10권6호
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• pp.425-433
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• 2000

수평 전기로에서 $CuGaTe_2$다결정을 합성하여 HWE 방법으로 $CuGaTe_2$단결정 박막을 반절연성 GaAs (100) 위에 성장하였다. $CuGaTe_2$단결정 박막은 증발원과 기판의 온도를 각각 $670^{\circ}C$, $410^{\circ}C$로 성장하였다. 이때 단결정 박막의 결정성이 10K에서 측정한 광발광 스펙트럼은 954.5 nm(1.2989 eV) 근처에서 exciton emission 스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 139arcsec로 가장 작게 측정되어 최적 성장 조건임을 알 수 있었다. Hall효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293 K에서 각각 $8.72{\times}10{23}$개 $\textrm m^3$, $3.42{\times}10^{-2}$ $\textrm m^2$/V.s였다. 상온에서 $CuGaTe_2$단결정 박막의 광흡수 특성으로부터 에너지 띠간격이 1.22 eV였다. Bandedge에 해당하는 광전도도 peak의 온도 의존성은 varshni 관계식으로 설명되었으며, varshni 관계식의 상수값은 $E_g$(0) = 1.3982 eV, $\alpha$ = $4.27{\times}10^{-4}$eV/K, $\beta$ = 265.5K로 주어졌다. $CuGaTe_2$단결정 박막의 광전류 단파장대 봉우리들로부터 10K에서 측정된$\Delta$cr(crystal field splitting)은 0.0791 eV, $\Delta$s.o(spin orbit coupling)는 0.2463 eV였다. 10K에서 광발광 봉우리의 919.8nm(1.3479 eV) free exciton($E_x$), 954.5nm(1.2989 eV)는 donor-bound exciton 인 $I_2(D^0,X)$와 959.5nm(1.2921 eV)는 acceptor-bound exciton 인 $I_1(A_0, X)$이고, 964.6nm(1.2853 eV)는 donor-acceptor pair(DAP) 발광, 1341.9nm(0.9239 eV)는 self activated(SA)에 기인하는 광발광 봉우리로 고찰되었다.

• 한국안광학회지
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• 제6권1호
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• pp.149-153
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• 2001

LiF:Mg, Cu, Na, Si TL 물질의 열자극발광을 온도대 파장대 발광강도의 3차원으로 측정하여 분석하였다. 온도대 발광강도곡선(glow curve)은 각 온도에서 파장별 발광강도데이터를 적분하여 구성하였고, 이를 분석하여 트랩에 관계되는 여러가지 파라미터들을 결정하였다. 발광곡선의 분석은 일반차 모델의 TL 강도 표현식을 기본함수로 하여 컴퓨터화된 발광곡선 분해(Computerized Glow Curve Deconvolution: CGCD)기법을 이용하였고, 그 결과 LiF:Mg, Cu, Na, Si TL 물질의 열자극발광곡선은 정점온도 333 K, 374 K 426 K, 466 K, 483 K 그리고 516 K를 갖는 6개의 개별적인 발광곡선들로 구성되어 있음을 확인하였다. 주 피크(main peak)인 456 K 발광곡선에 대하여 활성화에너지는 2.06 eV, 발광차수는 1.05로 밝혀졌다. 발광스펙트럼 분석결과 LiF:Mg, Cu, Na, Si TL 물질은 3개의 재결합준위 1.80 eV, 2.88 eV 그리고 3.27 eV를 가지는 것으로 판명되었다. 이 중 약 2.88 eV 준위가 지배적이고 다음으로 3.27eV 준위에서 발광이 일어나며 1.80 eV 준위는 극히 미약하나 분명한 존재를 확인하였다.

• Journal of Electrical Engineering and Technology
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• 제13권1호
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• pp.220-225
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• 2018

A class E power oscillator is demonstrated for 6.78-MHz wireless power transfer system. The oscillator is designed with a class E power amplifier to use an LC feedback network with a high-Q inductor between the input and the output. Multiple capacitors are used to minimize the variation of the oscillation frequency by capacitance tolerance. The gate and drain bias voltages with opposite characteristics to make the frequency shift of the oscillator are connected in a resistance distribution circuit located at the output of the low drop-out regulator and supplied bias voltages for class E operation. The measured output of the class E power oscillator, realized using the co-simulation, shows 9.2 W transmitted power, 6.98 MHz frequency and 86.5% transmission efficiency at the condition with 20 V $V_{DS}$ and 2.4 V $V_{GS}$.

• 한국세라믹학회지
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• 제41권5호
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• pp.359-363
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• 2004

Photoluminescence excitation (PLE) spectroscopy studies were performed for anodically etched porous Zn, which exhibited a PL in the blue/violet spectral range peaking at 420 nm (2.95 eV), and oxidzed porous Zn at 380$^{\circ}C$ for 10 min and 12 h. A broad absorption band was observed at 4.07 eV (305 nm), 3.49 (355 nm) for anodically etched porous Zn. In contrast, both the oxidized porous Zn and sintered ZnO exhibited an almost identical one broad absorption band at 3.85 eV (322 nm), when PLE spectra were measured at 378 nm (3.28 eV). The oxidized porous Zn and sintered ZnO, which displayed both UV and green luminescence band, showed an additional absorption band at 389 nm (3.19 eV) and 467 nm (2.66 eV). In contrast, no significant absorption band was detected for a 10-min oxidized porous Zn, which only displayed one UV luminescence void of deep-level luminescence. These absorption bands determined by PLE studies enabled a clear understanding of an emission mechanism for the UV and green luminescence from ZnO.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.271-271
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• 2013

The defect states of a Ar-sputtered SiO2 surface on Si (001) were investigated using Auger electron spectroscopy (AES) and reflection electron energy loss spectroscopy (REELS). The REELS spectra at the primary electron energy of 500 eV showedthat three peaks at 2.5, 5.1, and 7.2 eV were found within the band gap after sputtering. These peaks do not appear at the primary electron energies of 1,000 and 1,500 eV, which means that the defect states are located at the extreme surface of a SiO2/Si thin film. According to the calculations, two peaks at 7.2 and 5.1 eV are related to neutral oxygen vacancies. However, the third peak at 2.5 eV has never been previously reported and the theories proposed that this defect state may be due to Si-Si bonding. Our Auger data showed that a peak for Si-Si bonding at 89 eV appears after Ar ion sputtering on the surface of the sample, which is consistent with the theoretical models.

• Progress in Superconductivity
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• 제12권1호
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• pp.46-50
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• 2010

In the superconducting $Sr_2VO_3FeAs$, containing bimetallic layers, with maximum $T_c{\approx}\;46\;K$ correlation effects on V ions have been investigated using LDA+U method. Within the local density approximation (LDA) this system has the one-third filled $t_{2g}$ manifold of V, decomposed into $d_{xy}$ of bandwidth W=2 eV and nearly degenerate $d_{zx}d_{yz}$ of W=1 eV. Consideration of correlation effects leads to a metal-insulator transition on V ions $t^{2\uparrow}_{2g}\;{\rightarrow}\;d^{1\uparrow}_{xz}\;d^{1\uparrow}_{yz}$ at the critical on-site Coulomb repulsion $U_c$= 3.5 eV. At U=4 eV, the electronic structure, in which V ions are insulating, leads to several van Hove singularities near $E_F$ and similar Fermiology with other pnictides. Applying U to V ions results in increasing Fe moment as well as V moment, indicating somewhat hybridization between Fe and V ions even though this system is strongly 2-dimesional. Our results show possible importance of correlation effects on this system.

• Journal of Nutrition and Health
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• 제1권2호
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• pp.93-105
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• 1968

The variations of both thiamine and riboflavin value in the organs, viz. liver, small intestine, spleen and kidney of the rats were measured for observing some metabolic changes in the animals during fasting and feeding different quality of diets without V-E supplement. The animal used for the experiment was adult female ablino rat from a pure strain, weighing 225-280g. The animals were divided into 6 groups; the control group, the high carbohydrate diet group, the high carbohydrate diet with V-E group, the high protein diet group, the high protein diet with V-E group, and fasting group. The result obtained are summarized as follows; 1. The thiamine contents in the liver were once increased during early stage of starvation compared with the control group, thereafter they were decreased on the 8 days fasting while the contents in the small intestine and spleen were decreased during 1 to 8 days fasting. 2. The riboflavin contents in the liver and kidney were increased during starvation and the content in the small intestine was no marked change compared with control group. 3. The thiamine contents in the liver and small intestine during feeding the high carbohydrate with V-E supplement diet group were lower than that of the diet without V-E group and the content in the spleen was increased by feeding V-E enriched high carbohydrate diet. 4. The thiamine contents in the liver, small intestine and spleen during feeding the V-E supplemented diets were lower than that of the non-supplemented one's. 5. The riboflavin contents in the liver, small intestine, and kidney were increased during feeding the high carbohydrate diet compared to the control group, and they were decreased during feeding the V-E enriched high carbohydrate diet. 6. The riboflavin contents in each organ were increased during feeding the high protein diet compared to the control group, and they were much increased during 20 to 30 days of feeding the V-E supplemented high protein diet. 7. Therefore, as the above results showed, the variation of thiamine value in the each organs were not markedly changed during feeding different quality of the diets. The thiamine and riboflavin contents in the each organ in the V-E enriched high carbohydrate diet group were lower than without V-E supplemented one's The riboflavin contents in each organ were increased during feeding the high protein diet compared with the control group and the centents were increased during 20 to 30 days of the feeding V-E enriched high protein diet.