• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.44-45
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• 2006

Gene therapy holds great promise for treating various forms of diseases with a genetic origin including cystic fibrosis, different forms of cancer, and cardiovascular disorders. The clinical use of gene therapy treatments is however restricted, mainly because of the absence of safe and efficient gene delivery technologies. In our group, with an aim of developing efficient and nontoxic polymeric gene delivery systems, several novel types of polymeric gene carriers have been designed, synthesized, and evaluated. Herein, I will mainly present our recent work on low molecular weight linear PEI-PEG-PEI triblock copolymers, degradable hyperbranched poly(ester amine)s, and reduction-sensitive poly(amido amine)s.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.72-76
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• 2015

Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$ for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below $300^{\circ}C$ had the NiO phase, but, at $400^{\circ}C$, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below $300^{\circ}C$ were about 3.7 eV, but that at $400^{\circ}C$ should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below $300^{\circ}C$ showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at $400^{\circ}C$ showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.22-27
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• 2006

The electronic band structures of Metal-doped titanium dioxide, M-doped $TiO_2$ (M=Co, Cr, Fe), have been studied by using XRD, UV-vis diffuse reflectance spectrometer and FP-LAPW (Full-Potential Linearized Augmented-Plane-Wave) method. The UV-vis of M-doped $TiO_2$ (M=Co, Cr, Fe) showed two absorption edges; the main edge due to the titanium dioxide at 387 nm and a shoulder due to the doped metals at around 560 nm. The band gap energies of Co, Cr and Fe-doped $TiO_2$ calculated by FP-LAPW method were 2.6, 2.0, and 2.5 eV, respectively. The theoretically calculated band gap energy of $TiO_2$ by using FP-LAPW method was the same as experimental results. FP-LAPW method will be useful for fabrication and development of photo catalysts working under visible light.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.396-399
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• 2008

In this study, the electric field distributions have been investigated by simulation in accordance with the various shapes of ITO-electrodes. Also we have measured the density of excited Xe atoms in the 1s5 state in discharge cell, where the gap distance of 60 um, gas pressure of 400 Torr, Xe contents of 7%, and sustaining voltage of 200 V are kept in this experiment. The maximum density of excited Xe atoms in the 1s5 state in a discharge cell for the fish-boned, T shaped and squared ITO electrodes have been measured to be $3.01\;{\times}\;10^{13}\;cm^{-3}$, $2.66\;{\times}\;10^{13}\;cm^{-3}$ and $2.06\;{\times}\;10^{13}\;cm^{-3}$, respectively. It is shown that the electric field distribution with different ITO Electrodes is essential factor for these maximum density of excited Xe atoms in discharge cell.

• Proceedings of the Korean Geotechical Society Conference
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• 2004.03b
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• pp.154-161
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• 2004

The flat dilatometer test(DMT) is a geotechnical tool to estimate in-situ properties of various types of ground materials. The undrained shear strength is known to be the most reliable and useful parameter obtained by DMT. However, the existing relationships which were established for other local deposits depend on the regional geotechnical characteristics. In addition, the flat dilatometer test results have been interpreted using three intermediate indicesmaterial index($I_p$), horizontal stres index($K_p$), and dilatometer modulus($E_p$) and the undrained shear strength is estimated only by using the horizontal stress index($K_D$). In this paper, an artificial neural network was developed to evaluate the undrained shear strength by DMT and the ANN, based on the $p_0,\;p_1,\;p_2,\;{\sigma}'_v_0$, and porewater pressure. The ANN which adopts the back-propagation algorithm was trained based on the DMT data obtained from Korean soft clay. To investigate the feasibility of ANN model, the prediction results obtained from data which were not used to train the ANN and those obtained from existing relationships were compared.

• Transactions of the Korean hydrogen and new energy society
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• v.23 no.6
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• pp.660-669
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• 2012

Gas resources captured in the form of gas hydrates are an order of magnitude larger than the resources available from conventional resources. Focus of this research is to investigate the effect of DME on phase equilibria of methane hydrate, as well as the possibility of the use of the PRO/II computer simulation to estimate the phase equilibria. In systems containing water and a gaseous component like, for instance, methane, ethane, and propane, gas hydrates may occur, if conditions in terms of pressure and temperature are satisfied. Mixtures of gases, e.g. LPG or natural gas, are also able to form gas hydrates in the presence of water. The experiments presented here were performed at temperatures varying between 268.15K and 288.15K and at pressures varying between 1.88 MPa and 10.56 MPa. It was found that the phase equilibria of methane hydrate is influenced by the addition of DME to the system. The pressure for the equilibrium hydrate-liquid water-vapor (H - $L_w$ - V) in the system water + methane is reduced upon addition of DME. The phase equilibria of methane hydrate can be estimated by the PRO/II computer simulation, whereas those of methane hydrate containing DME or LPG can't be estimated properly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.163-166
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• 2004

모바일향 90nm DRAM을 개발하기 위하여 비대칭 채널 구조를 갖는 Recess Channel Array Transistor (RCAT)로 cell transistor를 구현하였다. DRAM cell transistor에서 junction leakage current 증가는 DRAM retention time 열화에 심각한 영향을 미치는 요인으로 알려져 있으며, DRAM의 minimum feature size가 점점 감소함에 따라 short channel effect의 영향으로 junction leakage current는 더욱 더 증가하게 된다. 본 실험에서는 short channel effect의 영향에 의한 junction leakage current를 감소시키기 위하여 Recess Channel Array Transistor를 도입하였고, cell transistor의 채널 영역을 비대칭으로 형성하여 data retention time을 증가시켰다. 비대칭 채널 구조을 이용하여 Recess Channel Array Transistor를 구현한 결과, sub-threshold 특성과 문턱전압, Body effect, 그리고, GIDL 특성에는 큰 유의차가 보이지 않았고, I-V특성인 드레인 포화전류(IDS)는 대칭 채널 구조인 transistor 대비 24.8% 정도 증가하였다. 그리고, data retention time은 2배 정도 증가하였다. 본 실험에서 얻은 결과는 향후 저전압 DRAM 개발과 응용에 상당한 기여를 할 것으로 기대된다.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.46-50
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• 2007

We have studied the nematic liquid crystal (NLC) alignment effects on a nitrogen-doped diamond-like carbon (NDLC) thin film layer with ion beam irradiation. The pretilt angle for NLC on the NDLC surface with ion beam exposure was observed below 1 degree. Also, we had the good LC alignment characteristics on the NDLC thin films with ion beam exposure of 1800 eV. In thermal stability experiments, the alignment defect of the NLC on the NDLC surface with ion beam irradiation above annealing temperature of $250^{\circ}C$ can be observed. Therefore, the good thermal stability and LC alignment for NLC by ion beam aligned NDLC thin films can be achieved.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.92-100
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• 1985

New N+N/P HLE solar cells with N+ surface charge accumulated layer in the emitter region are fabricated on the N/P Si epiwafer by incorporating high fixed positive charge density (Qss) at the Si-AR layer interface. Solar cells are classified into two categories, i.e, OCI and NCI Cell depending on AR layer, SiOl and Si3 N4/sioxynitride layer respectively. The distribution of Qss in the Si-AR layer interface is examined by C-V plot. It shows that the surface charge accumulated layer is formed more effectively in the NCI cell (Qss=1.79-1.84$\times$1012cm-2) than in the OCI cell (Qss=3.03~4.40$\times$1011 cm-2). The efficiency characteristics are evaluated under the JCR halogen lamp of 100 mw/cm2. The average (maximum) conversion efficiency for active area is 15.18 (15.46)% in the OCI cell and 16.31 (17.07)% in the NCI cell.