• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.263-266
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• 1999

Electrolunlinescent devices based on conjugated polymer emitting materials have been much attracted possible applications for multicolor flat panel display, since the conjugated polymers have a small band gap emitting obtained at a low driving voltage. In this paper, we fabricated the single layer EL device using poly(3-hexylthiophene) as emitting material Electroluminescence(EL) and I-V-L characteristics of indium-tin-oxide[ITO]P3HT/AI device with a various thickness were investigated. It was demonstrate that the I-V characteristics depend, not the voltage but the electric- field strength, The current is dependent on the electric filed and not on the applied voltage, indicating that the carriers are injected by a tunneling process. In the device, the barrier to hole injection is only 0.5eV and the barrier to electron injection is 1.5eV.

• The Journal of Korean Association of Computer Education
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• v.10 no.2
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• pp.27-38
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• 2007

The objective of this research is to propose a e-learning standardization roadmap based on the future scenarios. First of all, a e-learning standardization committee was organized to collect ideas on the visions of the future e-learning, in which experts from the technological, educational, and standardization field were invited. They made a great contribution to the success of this research by furnishing us with valuable advices and feedbacks. The first step of the research was to survey the current e-learning standardization proposals suggested by some of standard organizations in and out of the country. We developed three 2015 scenarios for e-learning in elementary and secondary education, in university education, and in life-long education respectively by using a top-down roadmap development strategy. In the second step, we drew a new e-learning standardization roadmap v2 out of the future scenarios by gap analysis between the current and the future e-learning standardization elements. These future e-learning scenarios and e-learning standardization roadmap are very helpful to teachers or educational policy makers for understanding future e-learning and e-learning standardization.

• Journal of Chest Surgery
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• v.14 no.3
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• pp.235-240
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• 1981

A total of 102 patients who had an Open Heart Surgery from April 1976 to July 1981 were reviewed. 55 paeitnts were congenital heart disease and 47 patients were acquired heart disease. Among SS patients of congenital heart disease, 18 T 0 F, 18 V S D, 8 A S D, and each one case of l\ulcorner 0 R V, Truncus arteriosus, Ebstein anomaly, Single ventricle, P D A, P 5, A S D + P 5, E C D, V 5 D + P D A, A - P window, D C R V were noted respectively. In 47 patients of acquired heart disease and one Ebstein patient, 46 prosthetic values were implanted: 17 had M V R, 4 had A V R, 2 had M V R + A V R, and 4 had M V R + T V R and one T V R. The operative mortality was 8.S% in acquired heart disease and 17% in congenital heart disease. The follow up period was between 6 months and 6 years. There were 3 cases of late mortality in acquired heart disease and one case in congenital heart disease.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.14-21
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• 2004

It is essential to increase the switching speed of power devices to reduce the energy loss because high frequency is commonly used in power device operation these days. In this work electron irradiation has been conducted to reduce the lifetime of minority carriers and thereby to increase the switching speed of a$p^+- n^-$ junction diode. Effects of electron irradiation on the electrical properties of the diode are reported The switching speed is effectively increased. Also the junction leakages and the forward voltage drop which are anticipated to increase are found to be negligible in the $p^+- n^-$ junction diodes irradiated with the optimum energy and dose. The analysis results of DLTS and C-V profiling indicate that the defects induced by electron irradiation in the silicon substrate are donor-like ones which have the energy levels of 0.284 eV and 0.483 eV. Considering all the experimental results in this study, it might be concluded that electron irradiation is a very useful technique in improving the switching speed and thereby reducing the energy loss of $p^+- n^-$ junction diode power devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.882-889
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• 2011

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• Journal of Astronomy and Space Sciences
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• v.24 no.4
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• pp.349-366
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• 2007

We designed and developed a multi-purpose CCD camera system for three kinds of CCDs; KAF-0401E($768{\times}512$), KAF-1602E($1536{\times}1024$), KAF-3200E($2184{\times}1472$) made by KODAK Co.. The system supports fast USB port as well as parallel port for data I/O and control signal. The packing is based on two stage circuit boards for size reduction and contains built-in filter wheel. Basic hardware components include clock pattern circuit, A/D conversion circuit, CCD data flow control circuit, and CCD temperature control unit. The CCD temperature can be controlled with accuracy of approximately $0.4^{\circ}C$ in the max. range of temperature, ${\Delta}33^{\circ}C$. This CCD camera system has with readout noise $6\;e^-$, and system gain $5\;e^-/ADU$. A total of 10 CCD camera systems were produced and our tests show that all of them show passable performance.

• Korean Chemical Engineering Research
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• v.44 no.5
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• pp.444-452
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• 2006

This paper reports experimental excess molar volumes $V^E_m$ using a digital vibrating-tube densimeter and excess molar enthalpies $H^E_m$ by means of an isothermal microcalorimeter with a flow mixing cell for the binary mixtures{1,2-dichloropropane + 2-(2-methoxyethoxy)ethanol} and {1,2-dichloropropane + 2-(2-ethoxyethoxy)ethanol} at 298.15 K under atmospheric pressure. All the $V^E_m$ and $H^E_m$ of the two binary mixtures showed S-shaped forms, being negative for poor and positive for rich 1,2-dichloropropane mole fractions. These show that the excess properties were shown to be negative deviation from ideality due to the strong self-association effect among 2-(2-alkoxyethoxy)ethanol molecules at an early stage of mixing, a relatively high energy then is needed to break hydrogen bonds of 2-(2-alkoxyethoxy)ethanol with an increase ofhalogenated hydrocarbon molecular at high mole fraction of 1,2-dichloropropane. The values of excess molar properties($V^E_m$ and $H^E_m$) were fitted by the Redlich-Kister equation using Nelder-Mead's simplex pattern search method. The Wilson, NRTL, and UNIQUAC models were used to correlate the $H^E_m$ values.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.3
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• pp.122-124
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• 2008

The partial phase diagram of $NaNO_3$-NaCl system was investigated and the eutectic temperature was determined as $294.5^{\circ}C$. A typical rod eutectics of $NaNO_3$-4.56 wt%NaCl was directionally solidified. The results of interrod spacing, ${\lambda}_E$ as a function of growth velocity, V, were. obtained as ${\lambda}_E\;V^{0.39}\;=\;5.26$ (temperature gradient, $G_l\;=\;21.4^{\circ}C/mm$) and ${\lambda}_E\;V^{0.32}\;=\;5.45$ ($G_l\;=\;3.9^{\circ}C/mm$) and the exponent numbers of growth velocity were smaller than the theoretical value, 1/2. The sample rotation applied during directional solidification made the interrod spacing decrease slightly.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.301-307
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• 2014

We have fabricated $SnO_2$/Zn core-shell nanowires by employing a sputtering technique with a Zn target. Scanning electron microscopy indicated that the surface of the nanowires became rougher by the coating. X-ray diffraction of the coated nanowires exhibited the hexagonal Zn diffraction peaks. TEM image of coated structures showed that shell layer was mainly comprised of hexagonal Zn phase. EDX spectra suggested that the shell layer consisted of Zn elements. The photoluminescence spectrum of the coated nanowires in conjunction with Gaussian fitting analysis revealed that the emission was disconvoluted with three Gaussian functions, which are centered at 2.1 eV in the yellow region, 2.4 eV in the green region, and 3.3 eV in the ultraviolet region. We speculated the possible mechanisms of these emission peaks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.267-270
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• 2004

A silver indium sulfide($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high qualify crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks. are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\ddot{A}cr$, and the spin orbit splitting, $\ddot{A}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_g(T)$, was determined.