• Nuclear Engineering and Technology
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• v.43 no.3
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• pp.279-286
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• 2011

The aging degradation and lifetime assessment of a domestic class 1E Ethylene-Propylene-Diene-Monomer (EPDM), which is a popular insulating elastomer for electrical cables in the nuclear power plants, were studied for equipment qualification verification under the Loss of Coolant Accident (LOCA) conditions. The specimens were acceleratively aged, underwent a LOCA environment, as well as tested mechanically, thermo-gravimetrically, and spectroscopically according to the American Society of the Testing of Materials (ASTM) procedures. The tensile test results revealed that the elongation at break gradually decreased with an increasing aging temperature. The lifetime of EPDM aged isothermally at $140^{\circ}C$ was 1,316 hours and reduced to 1,120 hours after experiencing the severe accident test. The activation energies of the elongation reduction were $1.10{\pm}0.196$ eV and $0.93{\pm}0.191$ eV before and after the LOCA condition, respectively. The TGA test results also showed that the activation energy of the aging decomposition decreased from 1.35 eV to 1.02 eV after undergoing the LOCA environment. Although the mechanical property changes were discernibly observed during the aging process, along with the LOCA simulation, the FT-IR analysis showed that the spectroscopic peaks and their intensities did not alter significantly. Therefore, it can be concluded that the degradation of the domestic class 1E EPDM due to aging can be tolerable, even in severe accident conditions such as LOCA, and thus it qualifies as a suitable insulating material for electrical cables in the nuclear power plants.

• Journal of the Korea Society of Computer and Information
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• v.21 no.9
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• pp.79-84
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• 2016

In this paper we consider the problem of finding the triplet (S,${\pi}$,f), where $S{\subseteq}V$, ${\pi}$ is a sequence of nodes in S and $f:V{\backslash}S{\rightarrow}S$ for a given complete graph G=(V,E). In particular, there exist two costs, $c^V_{uv}$ and $c^D_{uv}$ for $(u,v){\in}E$, and the cost of triplet (S,${\pi}$,f) is defined as $\sum_{i=1}^{{\mid}S{\mid}}c^V_{{\pi}(i){\pi}(i+1)}+2$ ${\sum_{u{\in}V{\backslash}S}c^D_{uf(u)}$. This problem is motivated by the integrated routing of the vehicle and drone for urban delivery services. Since a well-known NP-complete TSP (Traveling Salesman Problem) is a special case of our problem, we cannot expect to have any polynomial-time algorithm unless P=NP. Furthermore, for practical purposes, we may not rely on time-exhaustive enumeration method such as branch-and-bound and branch-and-cut. This paper suggests the simple heuristic which is motivated by the MST (minimum spanning tree)-based approximation algorithm and neighborhood search heuristic for TSP.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.81-81
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• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• Korean Chemical Engineering Research
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• v.49 no.2
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• pp.175-180
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• 2011

In this study, the $TiO_{2}/V_{2}O_{5}$ hybrid semiconductors were prepared by mixing $TiO_{2}$ and $V_{2}O_{5}$, and a subsequent smash process to reduce the recombination of electron and improve the efficiency of solar cells. Dye-sensitized solar cells were constructed using the resultant hybrid semiconductor, and their electrochemical properties were also investigated. The photocurrent-voltage curve obtained with the cells indicated a significant increase in the efficiency from 2.9 to 5.7% by the factor of 2 compared to the result obtained only with $TiO_{2}$. It is believed that the introduction of $V_{2}O_{5}$ effectively transport electrons in the $TiO_{2}$ conduction band to FTO glass and suppress recombination with the dye and/or the electrolyte, thus yielding an efficient performance of the dye sensitized solar cell. The impedance values also indicated a decrease of resistance in the interface of $TiO_{2}$/dye/electrolyte supporting the constructive contributions of the smashed $TiO_{2}/V_{2}O_{5}$ hybrid semiconductors for the efficiency.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.581-588
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• 2007

To enhance the photodecomposition of concentrated ammonia into N2, Pt/V-TiO2 photocatalysts were prepared using solvothermal and impregnation methods. Nanometer-sized particles of 0.1, 0.5 and 1.0 mol% V-TiO2 were prepared solvothermally, and then impregnated with 1.0 wt% Pt. The X-ray diffraction (XRD) peaks assigned to V2O5 at 30.20 (010) and Pt metal at 39.80 (111) and 46.20 (200) were seen in the 1.0 wt% Pt/ 10.0 mol% V-TiO2. The particle size increased in the order: pure TiO2, V-TiO2 and Pt/V-TiO2 after thermal treatment at 500 °C, while their surface areas were in the reverse order. On X-ray photoelectron spectroscopy (XPS), the bands assigned to the Ti2p3/2 and Ti2p1/2 of Ti4+-O were seen in all the photocatalysts, and the binding energies increased in the order: TiO2 < Pt/V-TiO2 < V-TiO2. The XPS bands assigned to the V2p3/2 (517.85, 519.35, and 520.55 eV) and V2p1/2 (524.90 eV) in the V3+, V4+ and V5+ oxides appeared over V-TiO2, respectively, while the band shifted to a lower binding energy with Pt impregnation. The Pt components of Pt/ V-TiO2 were identified at 71.60, 73.80, 75.00 and 76.90 eV, which were assigned to metallic Pt 4f7/2, PtO 4f7/2, PtO2 4f7/2, and PtO 4f5/2, respectively. The UV-visible absorption band shifted closer towards the visible region of the spectrum in V-TiO2 than in pure TiO2 and; surprisingly, the Pt/V-TiO2 absorbed at all wavelengths from 200 to 800 nm. The addition of vanadium generated a new acid site in the framework of TiO2, and the medium acidic site increased with Pt impregnation. The NH3 decomposition increased with the amount of vanadium compared to pure TiO2, and was enhanced with Pt impregnation. NH3 decomposition of 100% was attained over 1.0 wt% Pt/1.0 mol% V-TiO2 after 80 min under illumination with 365 nm light, although about 10% of the ammonia was converted into undesirable NO2 and NO. Various intermediates, such as NO2, -NH2, -NH and NO, were also identified in the Fourier transform infrared (FT-IR) spectra. From the gas chromatography (GC), FT-IR and GC/mass spectroscopy (GC/MS) analyses, partially oxidized NO and NO2 were found to predominate over V-TiO2 and pure TiO2, respectively, while both molecules were reduced over Pt/V-TiO2.

• Analytical Science and Technology
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• v.28 no.5
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• pp.341-346
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• 2015

In order to understand the counter anionic effects in a non-aqueous vanadium redox flow battery (VRFB), we synthesized four types of electrolyte salts (1-ethyltriethamine tertafluoroborate, [E-TEDA]⁺[BF₄]⁻, 1-ethyltriethamine hexafluorophosphate, [E-TEDA]⁺[PF₆]⁻, 1-butyltriethylamine tertafluoroborate, [B-TEDA]⁺[BF₄]⁻, and 1-buthyltriethamine hexafluorophosphate [B-TEDA]⁺[PF₆]⁻) by counter anion exchange reaction after the SN₂ reaction. We confirmed the successful synthesis of the electrolyte salts [E-TEDA]⁺[Br]⁻ and [B-TEDA]⁺[Br]⁻ via ¹H-NMR spectroscopy and GC-mass analysis before the counter anion exchange reaction. The electric potential of the vanadium acetylacetonate, V(acac)₃, as an energy storage chemical was shown to be 2.2 V in the acetonitrile solvent with each of the [E-TEDA]⁺[BF₄]⁻, [E-TEDA]⁺[PF₆]⁻, [B-TEDA]⁺[BF₄]⁻, and [B-TEDA]⁺[PF₆]⁻ electrolyte salts. In a non-aqueous VRFB with a commercial Neosepta AFN membrane, the maximum voltages reached 1.0 V and 1.5 V under a fixed current value of 0.1 mA in acetonitrile with the [E-TEDA]⁺[BF₄]⁻ and [E-TEDA]⁺[PF₆]⁻ electrolyte salts, respectively. The maximum voltage was 0.8 V and 1.1 V under a fixed current value of 0.1 mA in acetonitrile with the [B-TEDA]⁺[BF₄]⁻ and [B-TEDA]⁺[PF₆]⁻ electrolyte salts, respectively. From these results, we concluded that in the non-aqueous VRFB more of the [PF₆]⁻ counter anion than the [BF₄]⁻ counter anion was transported onto the commercial Neosepta AFN anion exchange membrane.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.2
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• pp.219-229
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• 2012

In the course of feasibility study the necessity of implementing electrochemical methods as an inline metrology technique to characterize semiconductor nano structures for a Deep Trench Dynamic Random Access Memory (DT-DRAM) (e.g. ultra shallow junctions USJ) was discussed. Hereby, the state of the art semiconductor technology on the advantages and disadvantages of the most recently used analytical techniques for characterization of nano electronic devices are mentioned. Various electrochemical methods, their measure relationship and correlations to physical quantities are explained. The most important issue of this paper is to prove the novel usefulness of the electrochemical micro cell in the semiconductor industry.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.636-639
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• 1993

This paper is discribed the results of insulation characteristic tests that are DC leakage current, test, tan${\delta}$ test, AC breakdown test and observation of tree in the used 6.6kV CV cables. In the correlation of these tests, the tan${\delta}$ test stands for the main deterioration factor of cable insulation.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.293-296
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• 2016

Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.64.2-64.2
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• 2011

a-Si 박막 태양전지는 a-Si:H을 유리 기판 사이에 주입해 만드는 태양전지로, 뛰어난 적용성과 경제성을 지녔으나 c-Si 태양전지에 비해 낮은 변환 효율을 보이는 단점이 있다. 변환 효율을 높이기 위한 연구 방법으로는 a-Si 박막 태양전지 단일cell 제작 시 high Bandgap을 가지는 p-layer를 사용함으로 높은 Voc와 Jsc의 향상에 기여할 수 있는데, 이 때 p-layer의 defect 증가와 activation energy 증가도 동시에 일어나 변환 효율의 증가폭을 감소시킨다. 이를 보완하기 위해 본 실험에서는 p-layer에 기존의 p-a-Si:H를 사용함과 동시에 high Bandgap의 buffer layer를 p-layer와 i-layer 사이에 삽입함으로써 그 장점을 유지하고 높은 defect과 낮은 activation energy의 영향을 최소화하였다. ASA 시뮬레이션을 통해 a-Si:H보다 high Bandgap을 가지는 a-SiOx 박막을 사용하여 p-type buffer layer의 두께를 2nm, Bandgap 2.0eV, activation energy를 0.55eV로 설정하고, i-type buffer layer의 두께를 2nm, Bandgap 1.8eV로 설정하여 삽입하였을 때 박막 태양전지의 변환 효율 10.74%를 달성할 수 있었다. (Voc=904mV, Jsc=$17.48mA/cm^2$, FF=67.97).