• Journal of the Korean Chemical Society
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• v.41 no.3
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• pp.117-122
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• 1997

On the basis of our previous paper[Bull. Korean Chem. Soc. 1995, 16, 1015], the relative stability, ionization potential, and chemical reaction of the neutral and multiply charged $C_{60}$n ions(n=3+ to 6-) have been investigated by the semi-empirical MNDO method. $C_{60}^{1-}$ has the highest stability. The ionization potential values of the $C_{60}$ ions range from 15.31 eV of $C_{60}^{2+}$ to -13.01 eV of $C_{60}^{6-}$. These values show a linear relationship according to charges. The average IP per charge is 3.15 eV from our calculations and 3.22 eV from the linear function of IP. A charge- or electron-transfer reaction of $C_{60}^{n+}$ will only occur if the ionization potential of any guest molecule is lower than the electron affinity of the host $C_{60}^{n+}$. If the energy gap between ionization potential and electron affinity, ${\Delta}_{IP-EA}$, is high, charge-transfer reactions arise by the charge-controlled effect. However, if ${\Delta}_{IP-EA}$ is low, electron-transfer reactions arise by the frontier-controlled effect.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.2
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• pp.122-127
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• 2021

This paper produces CdS thin film using ITO glass as substrates. The MDS (Multiplex Deposition Sputter System) was used to produce devices by changing RF power and deposition time. The manufactured specimen was analyzed for its optical properties. The purpose of this paper is to find the fabrication conditions that can be applied to the photo-absorbing layer of solar cells. When RF power was 50W and deposition time was 10 minutes, the thickness was measured at 64Å. At 100W, the thickness was measured at 406Å and at 150 W, the thickness was measured at 889Å. Thin films were found to increase in thickness as RF power increased. As a result of the light transmittance measurement, 550-850nm was observed to have a transmittance of approximately 70% or more when the RF power was 50W, 100W, and 150W. Increasing RF power increased thickness and increased particle size, resulting in increased thin film density, resulting in reduced light transmittance. When RF power was 100W and deposition time was 15 minutes, the band gap was calculated at 3.998eV. When deposition time is 20 minutes, it is 3.987eV, 150W is 3.965eV at 15 minutes, and 3.831eV at 20 minutes. It was measured that the band gap decreased as the RF power increased. At XRD analysis, diffraction peaks at 2Θ=26.44 could be observed regardless of changes in RF power and deposition time. The FWHM was shown to decrease with increasing deposition time. And it was measured that the particle size increased as RF power was constant and deposition time was increased.

• Biomolecules & Therapeutics
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• v.23 no.4
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• pp.320-326
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• 2015

The clinical benefits of oncogenic BRAF inhibitor therapies are limited by the emergence of drug resistance. In this study, we investigated the role of a negative regulator of the MAPK pathway, Spry2, in acquired resistance using BRAF inhibitor-resistant derivatives of the BRAF-V600E melanoma (A375P/Mdr). Real-time RT-PCR analysis indicated that the expression of Spry2 was higher in A375P cells harboring the BRAF V600E mutation compared with wild-type BRAF-bearing cells (SK-MEL-2) that are resistant to BRAF inhibitors. This result suggests the ability of BRAF V600E to evade feedback suppression in cell lines with BRAF V600E mutations despite high Spry2 expression. Most interestingly, Spry2 exhibited strongly reduced expression in A375P/Mdr cells with acquired resistance to BRAF inhibitors. Furthermore, the overexpression of Spry2 partially restored sensitivity to the BRAF inhibitor PLX4720 in two BRAF inhibitor-resistant cells, indicating a positive role for Spry2 in the growth inhibition induced by BRAF inhibitors. On the other hand, long-term treatment with PLX4720 induced pERK reactivation following BRAF inhibition in A375P cells, indicating that negative feedback including Spry2 may be bypassed in BRAF mutant melanoma cells. In addition, the siRNA-mediated knockdown of Raf-1 attenuated the rebound activation of ERK stimulated by PLX4720 in A375P cells, strongly suggesting the positive role of Raf-1 kinase in ERK activation in response to BRAF inhibition. Taken together, these data suggest that RAF signaling may be released from negative feedback inhibition through interacting with Spry2, leading to ERK rebound and, consequently, the induction of acquired resistance to BRAF inhibitors.

• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.271-281
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• 1992

Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.172-172
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• 2012

A Pt-skin $Pt_3Ni$(111) surface was reported to show high catalytic activity. In this study, we investigated the magnetic properties and electronic structures of the various oriented surfaces of bulk-terminated and Pt-segregated $Pt_3Ni$ by using a first-principles calculation method. The magnetic moments of Pt and Ni are appreciably enhanced at the bulk-terminated surfaces compared to the corresponding bulk values, whereas the magnetic moment of Pt on the Pt-segregated $Pt_3Ni$(111) surface is just slightly enhanced because of the reduced number of Ni neighboring atoms. Spin-decomposed density of states shows that the dz2 orbital plays a dominant role in determining the magnetic moments of Pt atoms in the different orientations. The lowering of the d-band center energy (-2.22 eV to -2.46 eV to -2.51 eV to -2.65 eV) in the sequence of bulk-terminated (100), (110), (111), and Pt-segregated (111) may explain the observed dependence of catalytic activity on surface orientation. Our d-band center calculation suggests that an observed enhanced catalytic activity of a $Pt_3Ni$(111) surface originates from the Pt-segregation.

• Industry Promotion Research
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• v.1 no.1
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• pp.1-6
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• 2016

To research the correlation between the amorphous and crystal structure of oxide semiconductors, AZO and IGZO films were deposited and annealed with various temperatures in a vacuum state. AZO increased the degree of crystal structure with increasing the annealing temperature, but IGZO became an amorphous structure after the annealing process at high temperature. The series of AZO films with various annealing temperatures showed the chemical shift from the analyzer of PL and O 1s spectra, but the results of IGZO films by PL and O 1s spectra were not observed the chemical shift. The binding energy of oxygen vacancy of AZO with a crystal structure was 531.5 eV, and that of IGZO with an amorphous structure was 530 eV as a lower binding energy.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.534-540
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• 2006

Thin films of $V_2O_3$, $VO_2$, and $V_2O_5$ were obtained from a single precursor solution through post-annealing processes under different annealing conditions. As annealed in air, the deposited films became $V_2O_5$ with orthorhombic crystal structure, while they were $V_2O_3$ and $VO_2$ with rhombohedral and monoclinic crystal structure as annealed in vacuums with base pressure of $1{\times}10^{-6}$ Torr and with 10 mTorr $O_2$ pressure, respectively. Electrical and optical measurements indicated that the $V_2O_5$ and $VO_2$ films are semiconducting, while the $V_2O_3$ films are metallic at room temperature. Chromium doping in $VO_2$ resulted in a decrease of the resistivity and changed the conduction type from n-type to p-type. 10% Cr-doped $VO_2$ films were found to have orthorhombic crystal structure, which is different from that of the undoped $VO_2$. Spectral features in the optical absorption spectra of all the films were interpreted as the transitions involving O 2p and V 3d bands. The crystal-field splittings between $t_{2g}$ and $e_g$ states of the V 3d bands are estimated to be about 1.5 and 1.0 eV for $V_2O_5$ and $VO_2$, respectively.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.51-54
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• 1999

Hydrogenated amorphous silicon (a-Si:H) films are fabricated by Argon radical annealing (ArRA). The deposition rate of continuously deposited a-Si:H film is 1.9 $\AA$/s. As ArRA time are increased to 0.5 and 1 minute, the deposition rate are increased to 2.8 $\AA$/s and 3.3 $\\AA$/s. The deposition rate of a-si:H films with 2 and 3 minutes ArRA time are 3.3 $\AA$/s. As the ArRA time is increased, the optical band gap and the hydrogen contents in the a-Si:H films are increased and slightly decreased. The light-induced degradation of ArRA treated a-Si:H films are less than that of continuously deposited a-Si:H film. The dark conductivity and the conductivity activation energy ($E_a$) of continuously deposited a-Si:H film are decreased to 1/25 in room temperature and increased to 0.09eV By 1 hour light soaking, respectively. The dark conductivity and $E_a$ of ArRA treated a-Si:H film decreased to 1/3 in room temperature and increased to 0.03eV by 1 hour light soaking, respectively. We could improve the stability of a-Si:H films under the light soaking by ArRA technique and discussed the microscopic process of ArRA technique.

• Journal of Life Science
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• v.31 no.10
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• pp.937-943
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• 2021

In this study, antibacterial activity against pathogenic strains and antioxidant activity were measured using the red pine leaf distilled concentrate. The results of the antibacterial activity measured using an emulsion of the red pine leaf distilled concentrate by the paper disc method showed the antibacterial activities against three Gram negative pathogenic strains, E. coli, S. typhi and Vibrio parahaemolyticus and exhibited growth inhibitions of 12 mm, 10 mm and 9 mm at a 5.0% (v/v) concentration, respectively. In addition, all three strains also showed growth inhibitions even at 0.5% (v/v) concentration. However, no antibacterial activity was exhibited against gram positive bacteria. The results of the antibacterial activity using the red pine leaf distilled concentrate measured by the turbidity method, the same antibacterial activities against three gram negative pathogenic strains, E. coli, S. typhi and V. parahaemolyticus as results of the paper disc method. V. parahaemolyticus showed more than 50% growth inhibition compared to the negative control at a concentration of 5% (v/v), E. coli exhibited 33.5% growth inhibition at 4 hr incubation, and S. typhi showed 65.1% and 44.6% growth inhibitions at 4 and 5 hr incubations, respectively. Antioxidant activities of an emulsion of the red pine leaf distilled concentrate were measured by DPPH and ABTS methods. DPPH method showed the highest activity of 55.81% at a 1.0% (v/v) concentration. ABTS method exhibited the highest activity of 18.44% at a 1.0% (v/v) concentration. Through this study, it is expected that the developments of the food and the cosmetics with enhanced functionality by utilizing the antioxidant and antibacterial activities of the red pine leaf distilled concentrate.

• Proceedings of the Korea Contents Association Conference
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• 2004.11a
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• pp.495-500
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• 2004

The neutron capture cross section of $^{99}Tc$ has been measured relative to the $^{10}B$(n,g) standard cross section by the neutron time-of-flight(TOF) method in the energy range of 0.007 eV to 47keV using a 46-MeV electron linear accelerator(linac) at the Research Reactor Institute, Kyoto University(KURRI). In order to experimentally prove the result obtained, the supplementary cross section measurement has been made from 0.3 eV to 1 keV using the Kyoto University Lead slowing-down Spectrometer(KULS) coupling to the linac. The relative measurement by the TOF method has been normalized to the reference value(20.01 b) at 0.0253 eV and the KULS measurement to that by the TOF method. The existing experimental data and the evaluated capture cross sections in ENDF/B-VI, JENDL-3.2, and JEF-2.2 have been compared with the current measurements by the linac TOF and the KULS experiments. The energy dependency of the KULS data is close to that of the TOF data which are energy-broadened by the resolution function of the KULS.