• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.341-347
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• 1998

We analyzed photoreflectance (PR) characterization of the $Al_xGa_{1-x}As$ epilayer grown by molecular beam epitaxy (MBE) method. The band-gap energy $(E_0)$ satisfying low power Franx-Keldysh (LPFK) due to GaAs buffer layer is 1.415 eV, interface electricall field $(E_i)$ is 1.05$\times$$10^4$V/cm, carrier concentration (N) is $1.3{\times}10^{15}\textrm{cm}^{-3}$. In PR spectrum intensity analysis at 300 K the $A^*$ peak below $(E_0)$ signal is low and distorted because of residual impurity in sample growth. The trap characteristic time ${\tau}_i$ of GaAs buffer layer is about 0.086 ms, and two superposed PR signal near 1.42eV consist of the third derivative signal of chemically eteched GaAs substrate and Franz-Keldysh oscillation (FKO) signal due to GaAs buffer layer.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.54-60
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• 2016

We have investigated the crystallization mechanism of the lithium disilicate ($Li_2O-2SiO_2$, LSO) glass particles with different sizes by isothermal and non-isothermal processes. The LSO glass was fabricated by rapid quenching of melt. X-ray diffraction and differential scanning calorimetry measurements were performed. Different crystallization models of Johnson-Mehl-Avrami, modified Ozawa and Arrhenius were adopted to analyze the thermal measurements. The activation energy E and the Avrami exponent n, which describe a crystallization mechanism, were obtained for three different glass particle sizes. Values of E and n for the glass particle with size under $45{\mu}m$, $75{\sim}106{\mu}m$, and $125{\sim}150{\mu}m$, were 2.28 eV, 2.21 eV, 2.19 eV, and ~1.5 for the isothermal process, respectively. Those values for the non-isothermal process were 2.4 eV, 2.3 eV, 2.2 eV, and ~1.3, for the isothermal process, respectively. The obtained values of the crystallization parameters indicate that the crystallization occurs through the decreasing nucleation rate with a diffusion controlled growth, irrespective to the particle sizes. It is also concluded that the smaller glass particles require the higher heat absorption to be crystallized.

• Journal of applied mathematics & informatics
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• v.38 no.3_4
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• pp.221-238
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• 2020

Let G = (V (G), E(G)) be a graph and let g : V (G) → S₃ be a function. For each edge xy assign the label r where r is the remainder when o(g(x)) is divided by o(g(y)) or o(g(y)) is divided by o(g(x)) according as o(g(x)) ≥ o(g(y)) or o(g(y)) ≥ o(g(x)). The function g is called a group S₃ cordial remainder labeling of G if |v_g(i)-v_g(j)| ≤ 1 and |e_g(1)-e_g(0)| ≤ 1, where v_g(j) denotes the number of vertices labeled with j and e_g(i) denotes the number of edges labeled with i (i = 0, 1). A graph G which admits a group S₃ cordial remainder labeling is called a group S₃ cordial remainder graph. In this paper, we prove that subdivision of graphs admit a group S₃ cordial remainder labeling.

• KNOM Review
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• v.21 no.2
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• pp.26-34
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• 2018

With the proliferation of cloud computing and services, the internet traffic and the demand for better quality of service are increasing. For this reason, server virtualization and network virtualization technology, which uses the resources of internal servers in the data center more efficiently, is receiving increased attention. However, the existing hardware Test Access Port (TAP) equipment is unfit for deployment in the virtual datapaths configured for server virtualization. Virtual TAP (vTAP), which is a software version of the hardware TAP, overcomes this problem by duplicating packets in a virtual switch. However, implementation of vTAP in a virtual switch has a performance problem because it shares the computing resources of the host machines with virtual switch and other VMs. We propose a vTAP implementation technique based on the extended Berkeley Packet Filter (eBPF), which is a high-speed packet processing technology, and compare its performance with that of the existing vTAP.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.361-364
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• 2004

Polarizers with high polarizing efficiency and other advanced optical films based on Lyotropic Dichroic Dyes have been developed for LCD and other applications. The developed optical films reveal both rod-like chromophores structure in a case of positive, or O-films and disc-like one for negative, or E-film.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.12
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• pp.59-64
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• 1991

Thin (25-103$\AA$) SiO$_2$ films are grown using the rapid thermal oxidation processing at temperatures of 105$0^{\circ}C$-115$0^{\circ}C$ for 5-30 sec, in order to investigate the characteristics of ultra thin oxide. For measuring the thickness of oxide TEM, ellipsometry, and C-V method which is taken in the condition of small surface band bending are used and compared. When neglecting the small deviation affected by both interface state and moisture charge effect, those three methods described above give similar results. In order to examine the effect of rapid thermal annealing, part of samples are annealed in N$_2$ ambient. MOS capacitors are fabricated and the characteristics of I-V and C-V are measured. Measurements show that the activation energy of initial thickness of oxide grown during the ramp-up time is of 1.125eV and the activation energy of the oxidation rate is of 0.98eV. As oxidation temperature is increased, dielectric breakdown field E$_{BD}$ is decreased due to the increase of fixed charge density N$_f$ However, E$_{BD}$ is shown to be decreased as increasing the thickness of oxide. The increase of N$_f$ in the early stage of thermal annealing results in the decrease of E$_{BD}$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.131-133
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• 2012

The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons (D0X), two-electron satellite (TES), free-to-neutral-acceptors (e,A0), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for D0X in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for D0X transitions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.130-131
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• 2001

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.86-90
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• 2017

We have reported structural and optical properties of self-assembled InAs/GaAs quantum dot (QD) grown by molecular beam epitaxy with different arsenic to indium flux ratios (V/III ratios). By increasing the V/III ratio from 9 to 160, average diameter and height of the InAs QDs decreased, but areal density of them increased. The InAs QDs grown under V/III ratio of 30 had a highest-aspect-ratio of 0.134 among them grown with other conditions. Optical property of the InAs QD was investigated by the temperature-dependent photoluminescence (PL) and integrated PL. From the temperature dependence PL measurements of InAs QDs, the activation energies of $E_{a1}$ and $E_{a2}$ for the InAs QDs were obtained $48{\pm}3meV$ and $229{\pm}23meV$, respectively. It was considered that the values of $E_{a1}$ and $E_{a2}$ are corresponded to the energy difference between ground-state and first excited state, and the energy difference between ground-state and wetting layer, respectively.