• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.1 s.116
• /
• pp.7-14
• /
• 2007

In this paper, the scan characteristics of phased array antenna consisted of rectangular open-ended waveguide with a triangular grid are investigated. An infinite array structure is analyzed by numerically solving the integral equation for the electric field over the waveguide aperture using waveguide mode function and Floquet mode function. Next, SEP(Scan Element Pattern) and SI(Scan Impedance) characteristics are simulated by CST's MWS(Microwave Studio) and Ansoft's HFSS(High Frequency Structure Simulator) for the finite and infinite array structures. Also, validity of these approaches is verified by comparing the calculated and simulated results with the measured ones for an $8{\times}8$ subarray. Within 10.5 % fractional bandwidth in the X-band, the fabricated subarray showed the flat gain characteristic in the scan range of ${\pm}45^{\circ}C$ in the E-plane(azimuth) and ${\pm}20^{\circ}C$ in the H-plane(elevation), and also showed the return loss characteristic of less than -10 dB.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.17 no.6
• /
• pp.1063-1068
• /
• 2022

The modern society has become entry into the information age after the spread of Internet. In the information age, internet was developed from the wired access to the wireless Internet access. When a surge in demand for wireless Internet access, performance and speed of 2.4 and 5GHz band for Wi-Fi which leads to saturation of the communication was significantly fall. Accordingly, the communication of the 6GHz band for Wi-Fi 6E came to be interested. In this paper, we studied the design and fabrication of microstrip patch antenna to be used in wireless communication systems operating at around 6GHz band. To obtain antenna parameters such as patch size, inter patch space, antenna was simulated by HFSS(High Frequency Structure Simulator). From these parameters, slot microstrip patch antenna is fabricated using FR-4 of dielectric constant 4.4. The characteristics of fabricated patch type microstrip antenna were analyzed by network analyzer.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.28 no.12B
• /
• pp.1081-1090
• /
• 2003

NGI(Next Generation Internet) is characterized by QoS(Quality of Service) and high speed transmission. Recently, DiffServ and MPLS become most influential NGI architecture. To guarantee end-to-end QoS, it is essential for NGI to interwork MPLS with DiffServ. Here, MPLS WG(Working Group) in IETF(Internet Engineering Task Force) proposed the method of E-LSP(EXP inferred-PSC LSPs) and L-LSP(Label-Only-Inferred PSC LSPs), but both of them have serious problems to satisfy perfect interworking. In this paper, we proposed an extended E-LSP architecture that supports Perfect DiffServ class and experimental function in MPLS such as ECN(Explicit Congestion Notification) capability. We verify that the proposed E-LSP architecture improves QoS in NGI by using ns2 simulator.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.305-305
• /
• 2013

태양전지는 무기태양전지와 유기태양전지 등이 연구 되고 있는데 [1] 그 중 유기물질의 장점(높은 수율, solution phase processing, 저비용으로 전력 생산)과 무기재료의 장점(높은 전자 이동도, 넓은 흡수 범위, 우수한 환경 및 열 안정성)을 융합함으로써 장기적 구조안정성의 확보와 광전변환의 고 효율화를 동시에 달성하기 위한 유기무기 하이브리드 태양전지가 최근 큰 관심을 끌고 있다[2]. 본 연구에서는 hybrid photovoltaics에 유기물 MDMO-PPV와 전도성 고분자 PEDOT:PSS를 무기물 GaN 위에 spin coating 하여 두께에 다른 효율을 측정하였다. 유기물 MDMO-PPV는 p-형으로 클로로벤젠, 톨루엔과 같은 유기 용매에 잘 녹으며 HOMO 5.33eV, LUMO 2.97eV, energy band gap 2.4eV이며 99.5%의 순도 물질을 사용하였다. 또한 정공 수송층(hole transport layer, HTL)으로 PEDOT:PSS를 사용하였으며, HOMO 5.0eV, LUMO 3.6eV, energy band gap 1.4eV를 가지며 증류수나 에탄올과 같은 수용성 용매에 잘 녹는 특성을 가지고 있다. 무기물은 III-V 족 물질 n-GaN(002)을 사용하였고 valence band energy 1.9eV, conduction band energy 6.3eV, energy band gap 3.4eV, 높은 전자 이동도와 높은 포화 속도, 광전자 소자에 유리한 광 전기적 특성을 가지고 있다. 기판으로는 GaN와 격자 부정합도와 열팽창계수 부정합도가 큰 Sapphire (Al2O3) 이종 기판을 사용하였다. 전극으로 Au를 사용하였으며 E-beam증착하였다. Reflector로서 Al를 thermal evaporator로 증착하였다 [3]. 실험 과정은 두께에 따른 효율을 알아보기 위해 MDMO-PPV를 900~1,500 rpm으로 spin coating 하였고, 열처리에 따른 효율을 알아보기 위해 열처리 온도 조건을 $110{\sim}170^{\circ}C$의 변화를 주었다. FE-SEM으로 표면과 단면을 관찰하였으며 J-V 특성을 알아보기 위해 각 샘플마다 solar simulator를 사용하여 측정하였고 그 결과를 논의하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.437-438
• /
• 2008

박막태양전지에서 p-layer, i-layer, n-layer의 thickness와 doping concentration은 가장 기본이 되는 요소이다. 각 layer에서 위 두 가지 요소를 ASA simulator를 이용해서 높은 효율을 갖는 박막태양전지를 설계하기 위해 조절하였다. Simulation결과 p-layer의 thickness는 $9.5*10^{-9}m$, doping concentration은 0.2eV, i-layer의 thickness는 $4.535*10^{-7}m$, n-layer의 thickness는 $2*10^{-8}m$, doping concentration 은 0.1eV에서 최종 11.48%의 효율을 얻을 수 있었다. 본 연구를 통하여 높은 효율의 박막태양전지 설계 시에 도움이 될 수 있을 것이다.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.11
• /
• pp.112-119
• /
• 1996

Impact ionization model in GaAs has been presented by modified keldysh formula with two sets of power exponent of 7.8 and 5.6 in study. Impact ionization rate is derived from fermil's golden rule and ful lenergy band stucture based on empirical pseudopotential method. Impact ionization rates show anisotropic property in low energy region (<3eV), but isotropic in high energy region (3>eV). Full band monte calo simulator is coded for investigating the validity of the GaAs impact ionization model, and validity is checked by comparing impact ionization coefficients with experimental values and ones in anisotropic model. Valley transitions to energy alteration are explained by investigating electron motion in brillouin zone for full band model to electric field variation.

• The Journal of Society for e-Business Studies
• /
• v.3 no.2
• /
• pp.37-55
• /
• 1998

This study describes the works on development of a scenario-based WBT system of electronic commerce to introduce and activate electronic commerce in our society because it is mostly required to correctly understand electronic commerce and timely educate its users and technicians for entering into global electronic commerce that binds every commercial area regardless of the borders and nationalities. This system, WBT(Web - Based Training of Electronic commerce), consists of two parts. The one part provides a general concept of EC. This is developed to meet the needs of beginner for EC. The other is a simulator for cyber shopping mall. It is designed for teaching how to shop at cyber shopping mall based on various scenarios. In addition, we can simulate ourselves for EDI, which enables trading partners to conduct routine business transaction, such as purchase orders, invoices and shopping notices with it. Our commitment to the development of this application is consistent with the objectives of being easy to learn electronic commerce and its applications in real world.

• Journal of Electrical Engineering and Technology
• /
• v.6 no.3
• /
• pp.423-430
• /
• 2011

Multi-input multi-output (MIMO) dynamic matrix control (DMC) technique is applied to control steam temperatures in a large-scale ultrasupercritical once-through boiler-turbine system. Specifically, four output variables (i.e., outlet temperatures of platen superheater, finish superheater, primary reheater, and finish reheater) are controlled using four input variables (i.e., two spray valves, bypass valve, and damper). The step-response matrix for the MIMO DMC is constructed using the four input and the four output variables. Online optimization is performed for the MIMO DMC using the model predictive control technique. The MIMO DMC controller is implemented in a full-scope power plant simulator with satisfactory performance.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.24 no.5
• /
• pp.794-803
• /
• 1987

In this paper, the SPICE 2.G6 JFET subroutine and other related subroutines are modified for circuit simulation of GaAs MESFET IC's. The hyperbolic tangent model is used for the drain current-voltage characteristics of GaAs MESFET's and derived channel-conductance and drain-conductance model from the above current model are implemented into small-signal model of GaAs MESFET's. And, device capacitance model which consider after-pinch-off state are modified, and device charge model for SPICE 2G.6 are proposed. The result of modification is shown to be suitable for GaAs circuit simulator, showing good agreement with experimetal results. Forthermore the DC convergence of this paper is better than that of SPICE 2.G JFET subroutine. GaAs MESFET model in this paper is applied for both depletion mode GaAs MESFET and enhancement-mode GaAs MESFET without difficulty.

• Proceedings of the KIEE Conference
• /
• 1998.11a
• /
• pp.319-322
• /
• 1998

This paper presents a comparison of off-line power system analysis packages in terms of the main structure, the computation algorithm, and the I/O structure of programs, which is necessary for the use of the real-time power system simulator to be developed at KEPRI. PSS/E, PSAPAC, EUROSTAG, and EMTP are investigated and a case study is performed to show the compatibility of input data between PSS/E and PSAPAC.