• Title/Summary/Keyword: E-beam

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Size-homogeneous gold nanoparticle decorated on graphene via MeV electron beam irradiation

  • Kim, Yoo-Seok;Song, Woo-Seok;Jeon, Cheol-Ho;Kim, Sung-Hwan;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.487-487
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    • 2011
  • Recently graphene has emerged as a fascinating 2D system in condensed-matter physics as well as a new material for the development of nanotechnology. The unusual electronic band structure of graphene allows it to exhibit a strong ambipolar electric field effect with high mobility. These properties lead to the possibility of its application in high-performance transparent conducting films (TCFs). Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ${\sim}60{\Omega}$/sq and ~85 % transmittance in the visible range (400?900 nm), the CVD-grown graphene electrodes have a higher/flatter transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. Here, we report an ingenious strategy, irradiation of MeV electron beam (e-beam) at room temperature under ambient condition, for obtaining size-homogeneous gold nanoparticle decorated on graphene. The nano-particlization promoted by MeV e-beam irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping, and energy dispersive X-ray spectroscopy. These results clearly revealed that gold nanoparticle with 10 ~ 15 nm in mean size were decorated along the surface of the graphene after 1.5 MeV-e-beam irradiation. A chemical transformation and charge transfer for the metal gold nanoparticle were systematically explored by X-ray photoelectron spectroscopy and Raman spectroscopy. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

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Fabrication Technology of the Focusing Grating Coupler using Single-step Electron Beam Lithography

  • Kim, Tae-Youb;Kim, Yark-Yeon;Han, Gee-Pyeong;Paek, Mun-Cheol;Kim, Hae-Sung;Lim, Byeong-Ok;Kim, Sung-Chan;Shin, Dong-Hoon;Rhee, Jin-Koo
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.1
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    • pp.30-37
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    • 2002
  • A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control'writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm). To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and 0.5 $\times$ 0.5 mm$^2$area, respectively. This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

Decomposition of Triclosan onto E-beam Process using a Design of Experiment(DOE) (전자빔을 이용한 triclosan 제거에 있어서 실험계획법의 이용)

  • Jang, Tae-Bum;Lee, Si-Jin
    • Journal of the Korean GEO-environmental Society
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    • v.13 no.6
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    • pp.51-57
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    • 2012
  • This study investigated on the photolytic degradation of Triclosan by E-beam process. The optimization of process was investigated during a series of batch experiments by design of experiments(DOEs). The DOE was one of the statistical application that was used for designed the response surface to determine the effects of each parameters. The responses were applied as removal rate of Triclosan(%, $Y_1$) and TOC removal rate(%, $Y_2$). Two independent variables were concentration of Triclosan and irradiation intensity that were designed as "$x_1$" and irradiation intensity was designed as "$x_2$". The regression equation in coded parameter between the Triclosan removal efficiencies(%) and TOC removal efficiencies(%) was $Y_1=63-12.4335x_1+15.1835x_2+5.8125x{_1}^2-5.6875x{_2}^2-0.75x_1x_2(R^2=95.1%,\;R^2(Adj)=91.7%)$ and $Y_2=46-8.8462x_1+11.7175x_2-0.75x{_1}^2-6.25x{_2}^2(R^2=98.7%,\;R^2(Adj)=97.7%)$, respectively. The model predictions agreed well with the experimentally observed results $R^2$ and $R^2(Adj)$ over 90% within both of $Y_1$ and $Y_2$. This result shows that the regression model express well about the effects of parameters on E-beam process and the statistical method was successfully applied.

The Influence of E-beam Irradiation on POLY(ETHER-BLOCK-AMIDE) (PEBA, Pebax) (전자 빔 조사후 PEBA (Poly Ether Block Amide)의 구조 및 기계적 특성 변화)

  • Shin, Sukyoung;Cho, SangGyu
    • Progress in Medical Physics
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    • v.25 no.4
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    • pp.205-209
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    • 2014
  • Medical polymers require sterilization and must be able to maintain material properties for a specified shelf life. Sterilization can be achieved by using gamma or e-beam exposure. In this study, accelerated aging tests of poly(ether-block-amide) (PEBA) copolymer samples is presented. PEBA copolymer samples with different polyether content that result in Shore hardness of 35D to 72D, were sterilized using e-beam radiation followed by accelerated aging at $55^{\circ}C$. E-beam sterilization effect on molecular weight and mechanical property has performed and analyzed. The average molecular weight significantly reduced as a result of ageing. The enlarged proportion of low molecular weight chains in the aged samples is consistent with the generation of degradation products produced by oxidative chain scission. Also E-beam materials have shown decreased tensile strength and elongation. Overall, this study demonstrated that the medical grade PEBA was significantly affected by radiation exposure over aging time, particularly at high irradiation doses. For medical use in case of radiation sterilization required, it is recommended to avoid Pebax material. If Pebax material must be in use for medical device, recommend to use alternate sterilization method such as Ethylene Oxide sterilization.

Measurement of Ion-induced Secondary Electron Emission Yield of MgO Films by Pulsed Ion Beam Method

  • Lee, Sang-Kook;Kim, Jae-Hong;Lee, Ji-Hwa;Whang, Ki-Woong
    • Journal of Information Display
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    • v.3 no.1
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    • pp.17-21
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    • 2002
  • Measurement of the ion-induced secondary electron emission coefficient (${\gamma}_i$) for insulating films is hampered by an unavoidable charging problem. Here, we demonstrate that a pulsed ion beam technique is a viable solution to the problem, allowing for accurate measurement of ${\gamma}_i$ for insulating materials. To test the feasibility of the pulsed ion beam method, the secondary electron emission coefficient from n-Si(100) is measured and compared with the result from the conventional continuous beam method. It is found that the ${\gamma}_i$ from n-Si(100) by the ion pulsed beam measured to be 0.34, which is the same as that obtained by continuous ion beam. However, for the 1000 A $SiO_2$ films thermally deposited on Si substrate, the measurement of ${\gamma}_i$ could be carred out by the pulsed ion method, even though the continuous beam method faced charging problem. Thus, the pulsed ion beam is regarded to be one of the most suitable methods for measuring secondary electron coefficient for the surface of insulator materials without experiencing charging problem. In this report, the dependence of ${\gamma}_i$ on the kinetic energy of $He^+$ is presented for 1000 ${\AA}$ $SiO_2$ films. And the secondary electron emission coefficient of 1000 ${\AA}$ MgO e-beam-evaporated on $SiO_2/Si$ is obtained using the pulsing method for $He^+$ and $Ar^+$ with energy ranging from 50 to 200 eV, and then compared with those from the conventional continuous method.

A Study on the MgO Protective Layer Deposited by Oxygen-Neutral-Beam-Assisted Deposition in AC PDP (산소 중성빔으로 보조증착된 MgO 보호막을 갖는 AC PDP의 특성에 관한 연구)

  • Li, Zhao-Hui;Kwon, Sang-Jik
    • Journal of the Korean Vacuum Society
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    • v.17 no.2
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    • pp.96-101
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    • 2008
  • The magnesium oxide (MgO) protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by Ion-Beam-Assisted Deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, Oxygen-Neutral-Beam-Assisted Deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in structural and discharge characteristics. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when the MgO thin film was deposited with an oxygen neutral beam energy of 300eV. The surface morphology of MgO thin film was also analyzed using AFM (Atomic Force Microscopy) and SEM (Scanning Electron Microscopy).

Enhanced Adhesion of Cu Film on the Aluminum Oxide by Applying an Ion-beam-mixd Al Seed Layar

  • Kim, Hyeong-Jin;Park, Jae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.229-229
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    • 2012
  • Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

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Dynamic Behavior of Timoshenko Beam with Crack and Moving Mass (크랙과 이동질량이 존재하는 티모센코 보의 동특성)

  • Yoon Han Ik;Choi Chang Soo;Son In Soo
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.1
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    • pp.143-151
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    • 2005
  • This paper study the effect of open cracks on the dynamic behavior of simply supported Timoshenko beam with a moving mass. The influences of the depth and the position of the crack in the beam have been studied on the dynamic behavior of the simply supported beam system by numerical method. Using Lagrange's equation derives the equation of motion. The crack section is represented by a local flexibility matrix connecting two undamaged beam segments i.e. the crack is modeled as a rotational spring. This flexibility matrix defines the relationship between the displacements and forces on the crack section and is derived by the applying fundamental fracture mechanics theory. As the depth of the crack is increased the mid-span deflection of the Timoshenko beam with the moving mass is increased. And the effects of depth and position of crack on dynamic behavior of simply supported beam with moving mass are discussed.