• Journal of Applied Biological Chemistry
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• v.54 no.2
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• pp.94-100
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• 2011

A gene encoding a putative phospholipase D was isolated from Bacillus licheniformis and cloned into pGEM-T easy vector. The gene was expressed in E. coli BL21 (DE3) using a pET-21(a) vector containing His6 tag. Affinity purification of the recombinant phospholipase D with nickel-nitrilotriacetic acid (Ni-NTA) resin resulted major one-band by sodium dodecyl sulfate polyacrylamide gel electrophoresis (SDS-PAGE) analysis. The purified enzyme showed a molecular weight of 44 kDa. The optimum activity of enzyme was around pH 7.0 and the enzyme was also the most stable around this condition. The optimum temperature was about $40-45^{\circ}C$ and the enzyme still showed considerable activities at wide range of temperature. Among various detergents, Triton X-100 significantly increased the enzyme activity, resulting in 181% activity of control at 0.6 mM of the detergent. Calcium ion did not significantly affect the enzyme activity, suggesting that the enzyme might be classified into $Ca^{2+}$-independent PLD.

• Journal of KIISE:Computing Practices and Letters
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• v.14 no.9
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• pp.916-920
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• 2008

The personal workspace consists of user- specified computing environment such as user profile, applications and their configurations, and user data. Mobile computing devices (i.e., cellular phones, PDAs, laptop computers, and Ultra Mobile PC) are getting smaller and lighter to provide personal work-space ubiquitously. However, various personal work-space mobility solutions (c.f. VMWare Pocket ACE[1], Mojopac[2], u-PC[3], etc.) are appeared with the advance of virtualization technology and portable storage technology. The personal workspace can be loaded at public PC using above solutions. Especially, we proposed a framework called ubiquitous personal computing environment (u-PC) that supports mobility of personal workspace based on wireless iSCSI network storage in our previous work. However, previous u-PC could support limited applications, because it uses IRP (I/O Request Packet) forwarding technique at filter driver level on Windows operating system. In this paper, we implement OS-level virtualization technology using system call hooking on Windows operating system. It supports personal workspace mobility and covers previous u-PC limitation. Also, it overcomes personal workspace loading overhead that is limitation of other solutions (i.e., VMWare Pocket ACE, Mojopac, etc). We implement a prototype consisting of Windows XP-based host PC and Linux-based mobile device connected via WiNET protocol of UWB. We leverage several use~case models of our framework for proving its usability.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.372-375
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• 1988

The III-V ternary alloy semiconductor $In_{l-x}Ga_{x}As$ were grown by the temperature Gradient of $0.60{\leq}x{\leq}0.98$. The electrical properties were investigated by the Hall effect measurement with the Van der Pauw method in the temperature range of $90{\sim}300K$. $In_{l-x}Ga_{x}As$ were revealed n-type and the carrier concentration at 300K were in the range of $9.69{\times}10^{16}cm^{-3}{\sim}7.49{\times}10^{17}cm^{-3}$. The resistivity was increased and the carrier mobility was decreased with increasing the composition ratio. The optical energy gap determined by optical transmission were $20{\sim}30meV$ lower than theoretical valves on the basis of absorption in the conduction band tail and it was decreased with increasing the temperature by the Varshni rule. In the photoluminescence of undoped $In_{l-x}Ga_{x}As$ at 20K, the main emission was revealed by the radiative recombination of shallow donor(Si) to acceptor(Zn) and the peak energy was increased with increasing the composition, X. The diffusion depth of Zn increases proportionally with the square root of diffusion time, and the activation energy for the Zn diffusion into $In_{0.10}Ga_{0.90}As$ was 2.174eV and temperatures dependence of diffusion coefficient was D = 87.29 exp(-2.174/$K_{B}T$). The Zn diffusion p-n $In_{x}Ga_{x}As$ diode revealed the good rectfying characteristics and the diode factor $\beta{\approx}2$. The electroluminescence spectrum for the Zn-diffusion p-n $In_{0.10}Ga_{0.90}As$ diode was due to radiative recombation between the selectron trap level(${\sim}140meV$) and Zn acceptor level(${\sim}30meV$). The peak energy and FWHM of electroluminescence spectrum at 77K were 1.262eV and 81.0meV, respectively.

• Archives of Pharmacal Research
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• v.20 no.1
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• pp.1-6
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• 1997

We determined the microviscosity of synaptosomal plasma membrane vesicles (SPMV) isolated from bovine cerebral cortex and liposomes of total lipids (SPMTL) and phospholipids (SPMPL) extracted from SPMV. Changes in the microviscosity induced by the range and rate of lateral diffusion were measured by the intramolecular excimerization of 1, 3-di(1-pyrenyl)propane (Py-3-Py). The microviscosity values of the direct probe environment in SPMV, SPMTL and SPMPL were 38.17, 31.11 and 27.64 cP, respectively, at$37^{\circ}C$and the activation energies $(E_a)$ of the excimer formation of Py-3-Py in SPMV, SPMTL and SPMPL were 8.236, 7.448 amd 7.025 kcal/mol, respectively. Probe location was measured by polarity and polarizability parameters of the probe Py-3-Py and probe analogues, pyrene, 1-pyrenenonanol and 1-pyrenemethyl-3${\beta}$-hydroxy-22, 23-bisnor-5-cholenate (PMC), incorporated into membranes or solubilized in reference solvents. There existed a good linear relationship between the first absorption peak of the $^1_a$ band and the polarizability parameter $(n^{2}-1)/(2n^{2}+1)$.The calculated refractive index values for SPMV, SPMTL and SPMPL were close to 1.50, which is higher than that of liquid paraffin (n=l.475). The probe location was also determined by using a polarity parameter $(f-1/2f^{I})$. Here f=$({\varepsilon}-1)/(2{\varepsilon}+1)$ is the dielectric constant function and $f^I=(n^2-1)/(2n^2+1)$ is the refractive index function. A correlation existed between the monomer fluorescence intensity ratio and the solvent polarity parameter. The probes incorporated in SPMV, SPMTL, and SPMPL report a polarity value close to that of 1-hexanol $({\varepsilon}=13.29)$. In conclusion, Py-3-Py is located completely inside the membrane, not in the very hydrophobic core, but displaced toward the polar head groups of phospholipid molecules, e.g., central methylene region of aliphatic chains of phospholipid molecules.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.37 no.1
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• pp.57-64
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• 2004

Effects of light and temperature on the nitrate uptake and germling growth of Enteromorpha compressa (L.) Greville (Chlorophyta) were studied based on samples from Cheongsapo near Busan, Korea. In addition, their effects on fatty acids composition in thallus were examined. Nitrate uptake showed saturation kinetics. $V_{max}$ (maximal uptake rate) and its $K_s$ (half-saturation constant) at $20^{\circ}C,\;80\;{\mu}mol\;m^{-2}s^{-1},$ white light were $1.571\;{\mu}mol{\cdot}g\;fr\;wt^{-1}{\cdot}h^{-1}$ and 3.56 ${\mu}M$, respectively. In nitrate uptake with irradiance, wavelength and temperature, its rate represented respectively the highest value as $1.405\pm0.020,\;0.623\pm0.040,\;1.422\pm0.022\;{\mu}mol{\cdot}g\;fr\;wt^{-1}{\cdot}h^{-1}\;at\;100\;{\mu}mol\;m^{-2}s^{-1},$ red light, $20^{\circ}C$ and exhibited significant difference among the examined conditions (p<0.001). Germling growth of E. compressa also showed saturation kinetics, and $V_{max}$ and its $K_s$ value at $20^{\circ}C,\;100\;{\mu}mol\;m^{-2}s^{-1},$ 12:12 h were $56.18\%\;day^{-1}$ and 0.33 ${\mu}M$, respectively. SGR (specific growth rate) recorded a maximal value as 49.33-54.80, 39.07-50.72, $47.20-54.53\%\;dat^{-1}$ at $120\;{\mu}mol\;m^{-2}s^{-1},$ blue light and $18^{\circ}C$ respectively, and showed significant difference (p<0.001). Red light made the effective nitrate uptake, but germling growth was largely limited by the light. In fatty acids analysis, PUFAs (polyunsaturated fatty acids) were high at blue light, $18^{\circ}C,\;100\;{\mu}M\;NO_3^-.$ However, irradiance did not affect the production of PUFAs. In conclusion, nitrate uptake and germling growth of E. compressa showed saturation kinetics to external nitrate concentration, and were significantly affected by irradiance, wave length and temperature. Fatty acid composition was also influenced by the factors except for irradiance. Their maximal values, together with the highest production of PUFAs, were found at blue light band, $20^{\circ}C,\;100\;{\mu}mol\;m^{-2}s^{-1},\;and\;100\;{\mu}M\;NO_3^-.$

• The Journal of Korean Institute of Communications and Information Sciences
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• v.3 no.1
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• pp.18-25
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• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.923-932
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• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.829-838
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.10
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• pp.1071-1078
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• 2003

In this paper, the planar, compact, and broadband phased array antenna system for IMT-2000 applications has been investigated. Two methods far designing a low-cost and low-complex beam-farming network are proposed. First, a new compact and broadband phase shifter with continuously controlled phase bits is designed by using parallel coupled lines. Second, its equivalent phase delay line is suggested to be capable of replacing the complex phase shifter with a reference phase bit on a phased array antenna. For the purpose of achieving the broadband system, in addition to the broadband phase shifter, a wide-slot antenna with a ground reflector is utilized as an element antenna. Therefore, the phased array antenna system has achieved compact size, broad bandwidth, and wide steering angle, although it has low complexity and low fabrication cost. The 3${\times}$1 phased array antenna system has a compact size of 1.6 λ${\times}$ l.6 λ, which is the sufficient ground plane of the wide-slot antenna. Experimental results present that the S$\_$11/ has less than 15 dB within the band and its radiation patterns on an E-plane have the capability of steering an antenna beam from -29$^{\circ}$to +30$^{\circ}$.

• Applied Chemistry for Engineering
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• v.3 no.1
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• pp.88-99
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• 1992

For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.