• Title/Summary/Keyword: Dynamic voltage converter

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The design of Fully Differential CMOS Operational Amplifier (Fully Differential CMOS 연산 증폭기 설계)

  • Ahn, In-Soo;Song, Seok-Ho;Choi, Tae-Sup;Yim, Tae-Soo;Sakong, Sug-Chin
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.6
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    • pp.85-96
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    • 2000
  • It is necessary that fully differential operational amplifier circuit should drive an external load in the VLSI design such as SCF(Switched Capacitor Filter), D/A Converter, A/D Converter, Telecommunication Circuit and etc. The conventional CMOS operational amplifier circuit has many problems according to CMOS technique. Firstly, Capacity of large loads are not able to operate well. The problem can be solve to use class AB stages. But large loads are operate a difficult, because an element of existing CMOS has a quadratic functional relation with input and output voltage versus output current. Secondly, Whole circuit of dynamic range decrease, because a range of input and output voltages go down according as increasing of intergration rate drop supply voltage. The problem can be improved by employing fully differential operational amplifier using differential output stage with wide output swing. In this paper, we proposed new current mirror has large output impedance and good current matching with input an output current and compared with characteristics for operational amplifier using cascoded current mirror. To obtain large output swing and low power consumption we suggest a fully differential operational amplifier. The circuit employs an output stage composed new current mirror and two amplifier stage. The proposed circuit is layout and circuit of capability is inspected through simulation program(SPICE3f).

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Design of a Low-Power 8-bit 1-MS/s CMOS Asynchronous SAR ADC for Sensor Node Applications (센서 노드 응용을 위한 저전력 8비트 1MS/s CMOS 비동기 축차근사형 ADC 설계)

  • Jihun Son;Minseok Kim;Jimin Cheon
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.16 no.6
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    • pp.454-464
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    • 2023
  • This paper proposes a low-power 8-bit asynchronous SAR ADC with a sampling rate of 1 MS/s for sensor node applications. The ADC uses bootstrapped switches to improve linearity and applies a VCM-based CDAC switching technique to reduce the power consumption and area of the DAC. Conventional synchronous SAR ADCs that operate in synchronization with an external clock suffer from high power consumption due to the use of a clock faster than the sampling rate, which can be overcome by using an asynchronous SAR ADC structure that handles internal comparisons in an asynchronous manner. In addition, the SAR logic is designed using dynamic logic circuits to reduce the large digital power consumption that occurs in low resolution ADC designs. The proposed ADC was simulated in a 180-nm CMOS process, and at a 1.8 V supply voltage and a sampling rate of 1 MS/s, it consumed 46.06 𝜇W of power, achieved an SNDR of 49.76 dB and an ENOB of 7.9738 bits, and obtained a FoM of 183.2 fJ/conv-step. The simulated DNL and INL are +0.186/-0.157 LSB and +0.111/-0.169 LSB.

A Single-Bit 2nd-Order CIFF Delta-Sigma Modulator for Precision Measurement of Battery Current (배터리 전류의 정밀 측정을 위한 단일 비트 2차 CIFF 구조 델타 시그마 모듈레이터)

  • Bae, Gi-Gyeong;Cheon, Ji-Min
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.3
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    • pp.184-196
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    • 2020
  • In this paper, a single-bit 2nd-order delta-sigma modulator with the architecture of cascaded-of-integrator feedforward (CIFF) is proposed for precision measurement of current flowing through a secondary cell battery in a battery management system (BMS). The proposed modulator implements two switched capacitor integrators and a single-bit comparator with peripheral circuits such as a non-overlapping clock generator and a bias circuit. The proposed structure is designed to be applied to low-side current sensing method with low common mode input voltage. Using the low-side current measurement method has the advantage of reducing the burden on the circuit design. In addition, the ±30mV input voltage is resolved by the ADC with 15-bit resolution, eliminating the need for an additional programmable gain amplifier (PGA). The proposed a single-bit 2nd-order delta-sigma modulator has been implemented in a 350-nm CMOS process. It achieves 95.46-dB signal-to-noise-and-distortion ratio (SNDR), 96.01-dB spurious-free dynamic range (SFDR), and 15.56-bit effective-number-of-bits (ENOB) with an oversampling ratio (OSR) of 400 for 5-kHz bandwidth. The area and power consumption of the delta-sigma modulator are 670×490 ㎛2 and 414 ㎼, respectively.

1V 1.6-GS/s 6-bit Flash ADC with Clock Calibration Circuit (클록 보정회로를 가진 1V 1.6-GS/s 6-bit Flash ADC)

  • Kim, Sang-Hun;Hong, Sang-Geun;Lee, Han-Yeol;Park, Won-Ki;Lee, Wang-Yong;Lee, Sung-Chul;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.9
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    • pp.1847-1855
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    • 2012
  • A 1V 1.6-GS/s 6-bit flash analog-to-digital converter (ADC) with a clock calibration circuit is proposed. A single track/hold circuit with a bootstrapped analog switch is used as an input stage with a supply voltage of 1V for the high speed operation. Two preamplifier-arrays and each comparator composed of two-stage are implemented for the reduction of analog noises and high speed operation. The clock calibration circuit in the proposed flash ADC improves the dynamic performance of the entire flash ADC by optimizing the duty cycle and phase of the clock. It adjusts the reset and evaluation time of the clock for the comparator by controlling the duty cycle of the clock. The proposed 1.6-GS/s 6-bit flash ADC is fabricated in a 1V 90nm 1-poly 9-metal CMOS process. The measured SNDR is 32.8 dB for a 800 MHz analog input signal. The measured DNL and INL are +0.38/-0.37 LSB, +0.64/-0.64 LSB, respectively. The power consumption and chip area are $800{\times}500{\mu}m2$ and 193.02mW.