• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.376-381
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• 2014

We present a CMOS rail-to-rail class-AB amplifier using dynamic current biasing to improve the delay response of the error amplifier in a low-dropout (LDO) regulator, which is a building block for a wireless power transfer receiver. The response time of conventional error amplifiers deteriorates by slewing due to parasitic capacitance generated at the pass transistor of the LDO regulator. To enhance slewing, an error amplifier with dynamic current biasing was devised. The LDO regulator with the proposed error amplifier was fabricated in a $0.35-{\mu}m$ high-voltage BCDMOS process. We obtained an output voltage of 4 V with a range of input voltages between 4.7 V and 7 V and an output current of up to 212 mA. The settling time during line transient was measured as $9{\mu}s$ for an input variation of 4.7-6 V. In addition, an output capacitor of 100 pF was realized on chip integration.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.160-164
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• 2018

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.5
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• pp.58-65
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• 2015

This paper presents the design of an implantable stimulation IC intended for neural prosthetic devices using $0.18-{\mu}m$ standard CMOS technology. The proposed single-channel biphasic current stimulator prototype is designed to deliver up to 1 mA of current to the tissue-equivalent $10-k{\Omega}$ load using 12.8-V supply voltage. To utilize only low-voltage standard CMOS transistors in the design, transistor stacking with dynamic gate biasing technique is used for reliable operation at high-voltage. In addition, active charge balancing circuit is used to maintain zero net charge at the stimulation site over the complete stimulation cycle. The area of the total stimulator IC consisting of DAC, current stimulation output driver, level-shifters, digital logic, and active charge balancer is $0.13mm^2$ and is suitable to be applied for multi-channel neural prosthetic devices.

• Journal of Power Electronics
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• v.14 no.3
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• pp.444-457
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• 2014

This paper presents the design and realization of a digital PV simulator with a Push-Pull Forward (PPF) circuit based on the principle of modular hardware and configurable software. A PPF circuit is chosen as the main circuit to restrain the magnetic biasing of the core for a DC-DC converter and to reduce the spike of the turn-off voltage across every switch. Control and I/O interface based on a personal computer (PC) and multifunction data acquisition card, can conveniently achieve the data acquisition and configuration of the control algorithm and interface due to the abundant software resources of computers. In addition, the control program developed in Matlab/Simulink can conveniently construct and adjust both the models and parameters. It can also run in real-time under the external mode of Simulink by loading the modules of the Real-Time Windows Target. The mathematic models of the Push-Pull Forward circuit and the digital PV simulator are established in this paper by the state-space averaging method. The pole-zero cancellation technique is employed and then its controller parameters are systematically designed based on the performance analysis of the root loci of the closed current loop with $k_i$ and $R_L$ as variables. A fuzzy PI controller based on the Takagi-Sugeno fuzzy model is applied to regulate the controller parameters self-adaptively according to the change of $R_L$ and the operating point of the PV simulator to match the controller parameters with $R_L$. The stationary and dynamic performances of the PV simulator are tested by experiments, and the experimental results show that the PV simulator has the merits of a wide effective working range, high steady-state accuracy and good dynamic performances.