• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.39-43
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• 2021

In the case of ZnO:Al thin films, it is the best material that can replace ITO that is mainly used as a transparent electrode in electronic devices such as solar cells and flat-panel displays. In this study, ZnO:Al films were fabricated by using the RF dual magnetron sputtering method at various substrate temperatures. As the substrate temperature increased, the crystallinity of the ZnO:Al thin films was improved, and the electrical conductivity and electrical properties of the thin film improved owing to the increase in grain size. In addition, the surface roughness of the ZnO:Al thin films increased due to changes in the surface and density of the thin films. Moreover, the substrate temperature increased the density of thin films and improved their transmittance. To be applied to solar cells and other several electronic devices in the future, the hardness and adhesion properties of the thin film improve as the substrate temperature increases.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.93-96
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• 2017

The structural, electrical and optical properties of Ti thin films fabricated by dual magnetron sputtering were investigated under various film thicknesses. The fabricated Ti thin films exhibited uniform surfaces, crystallinity, various grain sizes, and with various film thicknesses. Also, the crystallinity and grain size of the Ti thin films increased with the increase of film thickness. The electrical properties of Ti thin films improved with the increase of film thickness. The results showed that the performance of TCO-less DSSC critically depended on the film thickness of the Ti working electrodes, due to the conductivity of Ti thin film. However, the maximum conversion efficiency of TCO-less DSSC was exhibited at the condition of 100 nm thickness due to the surface scattering of photons caused by the variation of grain size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.725-728
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• 2016

We investigated the characterizations of carbon films fabricated by dual magnetron sputtering under various film thickness for the electrodes in TCO-less DSSC (dye-sensitized solar cells). Carbon films prepared at various conditions were exhibited smooth and uniform surfaces without defects. Also, the rms surface roughness of carbon films was decreased from 2.25 nm to 1.0 nm with the increase of film thickness. The sheet resistance as the electrical properties are improved from $11.2{\times}10^{-3}$ to $2.28{\times}10^{-3}$ with the increase of film thickness. In the results, the performance of TCO-less DSSC critically depended on the film thickness of working electrodes, indicating the conductivity of carbon films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.379-380
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• 2007

The characteristics of a co-sputtered indium zinc tin oxide (IZTO) films prepared by dual target dc magnetron sputtering from IZO and ITO targets at a room temperature are investigated. Film properties, such as sheet resistance, optical transmittance, surface work function and surface roughness were examined as a function of ITO dc power at constant IZO dc power of 100 W. It was shown that the increase of the ITO dc power during co-sputtering of ITO and IZO target resulted in an increase of sheet resistance of the IZTO films. This can be attributed to high resistivity of ITO film prepared at room temperature. Surface smoothness and roughness were investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The synchrotron x-ray scattering results obtained from IZTO film with different ITO contents showed that introduction of ITO atoms into amorphous IZO film resulted in a crystallization of IZTO film with (222) preferred orientation due to low alc transition temperature of ITO film. However, the transmittance of the IZTO films with thickness of 150 nm is between 80 and 85 % at wavelength of 550 nm regardless of ITO content. Possible mechanism to explain the ITO and IZO co-sputtering effect on properties of IZTO is suggested.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.124-125
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• 2012

Korea institute of materials science (KIMS) use a linear deposition source called as a closed drift linear plasma source (CDLPS) as well as dual magnetron sputtering (DMS) to deposit SiOxCyHz films in $HMDSO/O_2$ plasma. The CDLPS generates linear plasma using closed drifting electrons and can reduce device degradations due to energetic ion bombardments on organic devices such as organic photovoltaic and organic light emission diode by controlling an ion energy. The deposited films are investigated by Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Optical emission spectroscopy (OES) is used to measure relative radical populations of dissociation and recombination products such as H, CH, and CO in plasma. And SiOx film is applied to a barrier film on organic photovoltaic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.60-61
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• 2007

IAZO (indium aluminium zinc oxide) anode films were co-sputtered on glass substrate using a dual target DC magnetron sputtering system. For preparation of IATO films, at constant DC power of IZO (indium zinc oxide) target of 100 W, the DC power of AZO (Aluminum zinc oxide) target was varied from 0 to 100 W. To analyze electrical and optical properties of IAZO anode, Hall measurement examination and UV/V is spectrometer were performed, respectively. In addition, structure of IAZO anode film was examined by X-ray diffraction (XRD) method. Surface smoothness was investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From co-sputtered IAZO anode, good conductivity($2.32{\times}10^{-4}{\Omega}.cm$) and high transparency(approximately 80%) in the visible range were obtained even at low temperature deposition. Finally, J-V-L characteristics of phosphorescent OLED with IAZO anode were studied by Keithley 2400 and compared with phosphorescent OLED with conventional ITO anode.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.16-22
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• 1997

ion beam processing of materials for medical application has gained increasing interest in the last decade and the implantation of nitrogen into TI-6AI-4V to improve corrosive-wear performance is currently used for processing of total hip and knee joints. Oxides and nitrides of Ti, Zr, Al, Cr were deposited on TI-6AI-4V substrates by DC magnetron sputtering dual ion beam sputtering and ion beam assisted deposition. The cytotoxicity of these films were investigated by MTT method and showed comparable to untreated TI-6AI-4V Plasm-sprayed hydroxyapatite(HAp) coatings showed excellent cytotoxicity regardless of heat treatment. intermediate layer coatings of nitrides and oxides increased the bond strength of HAp to substrate by intrdducing chemical bond at interface. Heat treatment of HAp coatings also improved the chemical bond at interfaces and increased the bond strength of untreated TI-6AI-4V to 16.4 kg/$\textrm{cm}^2$ but still lower than 33.1 kg./$\textrm{cm}^2$ of ir oxide as a imtermediate layer caoting.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.219-223
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• 2000

All-solid state lithium rechargeable thin film batteries were fabricated with the configuration of$Cu_{0.5}V_2O_5/Lipon/Li$ using sequential thin film techniques. Copper vanadium oxide thin films and Lipon thin films were prepared by DC reactive dual source magnetron sputtering and RF magnetron sputtering, respectively. According to XRD analysis, we found out that copper vanadium oxide thin films were amorphous. The electrochemical behaviour of them was examined in half cell system using EC : DMC(1:1 in IM $LiPF_5$) liquid electrolyte. The ionic conductivity of Lipon thin film was $1.02\times10^{-6}S/cm$ at $25^{\circ}C$ and $Cu_{0.5}V_2O_5/Lipon/Li$ cell showed that the discharge capacity was about $50{\mu}Ah/cm^2{\mu}m$ beyond 500cyc1es.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.128-132
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• 2009

Transparent conducting thin films of indium tin oxide(ITO) co-sputtered with aluminum-doped zinc oxide(AZO) were deposited on glass substrate by dual magnetron sputtering. It was found that the electrical properties and structural characteristics of the films are significantly changed according to the sputtering power of the AZO target. The IAZTO film prepared with D.C power of ITO at 100 W and R.F power of AZO at 50 W shows an electrical resistivity of $4.6{\times}10^{-4}{\Omega}{\cdot}cm$ and a sheet resistance of $30{\Omega}/{\square}$ (for 150 nm thick). Besides of the improvement of the electrical properties, compared to the ITO films deposited at the same process conditions, the IAZTO films have very smooth surface, which is due to the amorphous nature of the films. However, the electrical conductivity of the IAZTO films was found to be deteriorated along with the crystallization in case of the high temperature deposition (above $310^{\circ}C$). In this work, high quality amorphous transparent conductive oxide layers could be obtained by mixing AZO with ITO, indicating possible use of IAZTO films as the transparent electrodes in OLED and flexible display devices.

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.267-271
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• 2009

Multicomponent transparent conducting oxide films were deposited on glass substrates at 150 by dual magnetron sputtering of AZO and ITO targets. In the case of mixing a limited amount of ITO (10W), resistivity of TCO films was significantly increased compared to the AZO film; from $3.5{\times}10^{-3}$ to $9.7{\times}10^{-3}{\Omega}{\cdot}cm$. Deterioration of the electrical conductivity is attributed to the decreases in carrier concentration and Hall mobility. Improvement of the conductivity could be obtained for the films prepared with ITO powers larger than 40 W. The lowest resistivity ($\rho$) of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ was achieved when ITO power was 100 W. Effects of $H_2$ incorporation on the electrical and optical properties of AZO-ITO films were investigated in this work. Addition of small amount of hydrogen resulted in the increase of carrier concentration and the improvement of electrical conductivity. It is apparent that the roughness of AZO-ITO films decreases dramatically after the transition of microstructure from polycrystalline to amorphous phase, which gives practical advantages such as an excellent uniformity of surface and a high etching rate. AZO-ITO films grown at sputtering ambient with hydrogen gas are expected to be applicable to optoelectronic devices such as organic light emitting diodes and flexible displays due to their sufficient electrical and structural properties.