• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.245-251
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• 2005

A high performance dual rocking magnet sputtering gun has been developed. The rocking magnet sputtering gun introduces full-face erosion by rapidly rocking the magnet in the region where the high plasma density is maintained. The newly developed dual rocking magnet sputtering gun whose target utilization was 77 percent achieved high performance in quality in the view of target utilization and target life-time comparing to the existing magnetron sputtering gun. The PIC-MCC target erosion simulation has been performed simultaneously. Comparing experimental target erosion profiles with simulated target erosion profiles, the simulation could estimate the tendency of the target erosion profiles but could not estimate an exact target erosion profile. If the simulation were improved more precisely, the cost reduction for the development of the multiple rocking magnet sputtering gun would be expected.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.694-697
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• 2015

We investigated the characterizations of carbon films fabricated by dual magnetron sputtering under various RF powers for the improvement of physical properties in carbon fiber (CF). All sputtered carbon films exhibited amorphous structure, regardless of RF powers, resulting in uniform and smooth surfaces. The hardness and elastic modulus are increased with the increase of RF power, and the adhesion and friction properties of carbon films were improved with the increase of RF power. In the results, The increase of RF power in the sputtering method improved tribological properties of the carbon films, and these attributes can be expected to improve the physical properties of the carbon fiber reinforcement plastics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.488-493
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• 2022

Generally, diamond-like carbon films (a-C:H, DLC) have been shown to have a low coefficient of friction, a high hardness and a low wear rate. Pd-doped C thin film was fabricated using a dual magnetron sputtering with two targets of graphite and palladium. Graphite target RF power was fixed and palladium target RF power was varied. The structural, physical, and surface properties of the deposited thin film were investigated, and the correlation among these properties was examined. The doping ratio of Pd increased as the RF power increased, and the surface roughness of the thin film decreased somewhat as the RF power increased. In addition, the hardness value of the thin film increased, and the adhesive strength was improved. It was confirmed that the value of the contact angle indicating the surface energy increases as the RF power increases. It was concluded that the increase in RF power contributed to the improvement of the physical properties of Pd-doped C thin film.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.76.2-76.2
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• 2007

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.1
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• pp.23-27
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• 2003

Structural properties of Cu-Ni alloy films, such as preferred orientation, crystallite size, in-ter-planar spacing, cross-sectional morphology, and electrical resistivity, are investigated in terms of tar-get configurations that are used in the film deposition by means of magnetron co-sputtering. Two different target configurations are considered in this study: a dual-type configuration in which two separate tar-gets (Cu and Ni) and different bias types (RF and DC) are used and a Ni-on-Cu type configuration in which Ni chips are attached to a Cu target. The dual-type configuration appears to have some advantages over the Ni-on-Cu type regarding the accurate control of atomic composition of the deposited Cu-Ni alloy. However, the dual-type-produced film exhibits a porous and columnar structure, the relatively large internal stress, and the high electrical resistivity, which are mainly due to the relatively low mobility of adatoms. The affects of thermal treatment and deposition conditions on the structural and electrical properties of dual-type Cu-Ni films are also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.36-41
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• 2023

We investigated the properties of vanadium oxide (VOx) buffer layers deposited by a dual RF magnetron sputtering method under various target powers for inverted organic solar cells (IOSCs). Sputter fabricatged VOx thin films exhibited higher crystallinity with the increase of target power, resulting in a uniform and large grain size. The electrical properties of VOx films are improved with the increase of target power because of the increase of V content. In the results, the performance of IOSCs critically depended on the target power during the film growth because the crystalllinity of the VOx film affects the carrier mobility of the VOx film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.322-322
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• 2011

Transparent Conductive Oxide (TCO) 박막은 디스플레이 산업에 낮은 면저항 및 높은 광투과성으로 없어서는 안 될 중요한 물질로 많은 선행연구가 진행되어져 왔다. 하지만 전 세계적으로 플라즈마와 TCO박막의 특성과의 상관관계에 대한 연구가 부족하여, 디바이스 업계에서 요구하는 수준에 미치지 못하고 있다. 본 연구에서는 저온 공정이 가능한 dual pulsed magnetron sputtering을 이용해 TCO박막을 합성하고 플라즈마 특성 변화에 따른 TCO 박막의 상관관계를 규명 하고자 한다. Dual pulsed magnetron의 자장에 의해 구속되는 플라즈마 내의 이온 종들과 이온과 중성자의 비율관계를 optical emission spectroscopy (OES)로 확인 하였고, 기판 전류 및 기판 온도 측정, Langmuir probe를 통한 플라즈마 특성 분석을 통하여 플라즈마와 특성과 박막 성장과의 상관관계에 대하여 규명 하였다. 전자 온도는 1.25 eV에서 2.46 eV 증가하는 것을 확인할 수 있었으며, 이온 밀도는 $1.7{\times}109/cm^3$에서 $2.2{\times}109/cm^3$ 증가하는 것을 확인하였다. 이러한 플라즈마 밀도가 증가함에 따라 박막은 비정질에서 다결정질로 바뀌면서 전기이동도는 증가하고 전자 농도는 감소하여 87.8%의 높은 투과율과 <50 ${\Omega}/{\Box}$의 면저항을 갖는 TCO 박막을 합성 하였다.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1648-1650
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• 1996

In present paper, Cu films $4{\mu}m$, thick were fabricated by dual deposition methods using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adherence, and reflection in Cu films [$Cu_{4-x}$(low resistivity) / $Cu_x$(high adherence) / Si- wafer] on the x thickness have been investigated. Cu films of $4{\mu}m$ thickness formed with dual deposition methods had the low electrical resistivity of about $2.6{\mu}{\Omega}{\cdot}cm$ and high adherence of about 700g/cm. In conclusion, it is possible for these films to be used for micro-devices.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1485-1487
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• 2000

A variety of target configurations in sputtering process have been proposed to deposit various structures of thin film alloys and compound films. In this study, we presented the comparative experimental results regarding to the characterization of properties of Cu-Ni thin films deposited by using a magnetron co-sputtering method, as a function of target configurations; one is using a single target with varying the area of Ni chips attached on the Cu target and another is using a dual-type target with two targets of Ni and Cu separated each other. Structural(d-spacing, crystal orientation, crystallite size, cross-sectional morphology) and electrical(resistivity) properties of deposited films are characterized and compared as a function of target configurations as well as deposition conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.416-419
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• 2008

In this study, we report on the characteristics of Aldoped ZnO (AZO) co-sputtered indium tin oxide (ITO) films prepared by dual target direct current (DC) magnetron sputtering at room temperature for organic light emitting diodes (OLEDs). The electrical and optical properties of co-sputtered IAZTO electrode were critically dependent on the DC power of AZO. Furthermore, the characteristics of co-sputtered IAZTO electrode were influenced by rapid thermal annealing temperature.