• Journal of electromagnetic engineering and science
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• v.3 no.1
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• pp.1-6
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• 2003

In this paper, a sub-harmonic dual-gate FET mixer is suggested to improve the isolation characteristic between LO and RF ports of an unbalanced mixer. The mixer was designed by using single-gate FET cascode structure and driven by the second harmonic component of LO signal. A dual-gate FET mixer has good isolation characteristic since RF and LO signals are injected into gatel and gate2, respectively. In addition, the isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer due to the large frequency separation between the LO and RF frequencies. As RF power was -30 ㏈m and LO power was 0 ㏈m, the designed mixer yielded the -47.17 ㏈m LO-to-RF leakage power level, 10 ㏈ conversion gain, -2.5 ㏈m OIP3, -12.5 ㏈m IIP3 and -1 ㏈m 1 ㏈ gain compression point. Since the LO-to-RF leakage power level of the designed mixer is as good as that of a double-balanced mixer, the sub-harmonic dual-gate FET mixer can be utilized instead.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.7 no.2
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• pp.178-185
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• 1996

In this paper, a theoretical analysis of a wide band distributed mixer using a dual-gate GaAs MESFET's(DGFET) is introduced. Based on low noise mixer mode(LNM) region modeling of DGFET, variation of g/sub m/ and conversion gain are presented versus bias. The distributed mixer is composed of drain and gate transmission line, m-derived image impedance matching circuits at each input and output port, and DGFET's. Through computer simulation, wide-band characteristics of designed distributed mixer are confirmed. And, it is certificated that LO/RF isolation between gate 1 and gate 2 is obtained more than 15dB.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1046-1049
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• 2002

In this paper, a sub-harmonic dual-gate FET mixer for IMT-2000 base-station was designed by using single-gate FET cascode structure and driven by the second order harmonic component of LO signal. The dual-gate FET mixer has the characteristic of high conversion gain and good isolation between ports. Sub-harmonic mixing is frequently used to extend RF bandwidth for fixed LO frequency or to make LO frequency lower. Furthermore, the LO-to-RF isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer because the frequency separation between the RE and LO frequency is large. As RF power is -30dBm and LO power is 0dBm, the designed mixer shows the -47.17dBm LO-to-RF leakage power level, 10dB conversion gain, -0.5dBm OIP3, -10.5dBm IIP3 and -1dBm 1dB gain compression point.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.197-200
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• 2005

This paper presents the design of a broadband hybrid mixer using dual-gate FET topology with a low-pass filter which improves return loss of output to isolate RF and LO signal. The low-pass filter shows the isolation whose RF and LO signal is better than 40 dBc at 2 GHz and 5 GHz band. The dual-gate mixer which has been designed by using cascade topology operates when the lower FET is biased in linear region and the upper FET is in saturation. The input matching circuit has been designed to have conversion gain from 2 GHz to 6 GHz. The designed mixer with low-pass filter shows the conversion gain of better than 7 dB from 2 GHz to 6 GHz at a low LO power level of 0 dBm with the fixed IF frequency of 21.4 MHz.

• Journal of Advanced Navigation Technology
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• v.10 no.2
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• pp.138-144
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• 2006

In this paper, dual mode FET mixer for WiBro and wireless LAN(WLAN) applications has been designed in the form of dual gate FET mixer by using the cascode structure of two single gate pHEMTs. The designed dual gate mixer has been optimized to have variable conversion gain for WiBro and WLAN applications in order to save dc power consumption. The LO to RF isolation of the designed mixer is more than 20dB from 2.3GHz to 2.5GHz band. With the LO power of 0dBm and RF power of -50dBm, the mixer shows 15dB conversion gain. When RF power increases from -50dBm to -20dBm, the conversion gain decreases to -2dB from 15dB with bias change. The variable conversion gain has several advantages. It can reduce the high dynamic range requirement of AGC burden at IF stage. Also, it can save the dc power dissipation of mixer up to 90%.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2286-2292
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• 2011

In this paper we present the design of Low Noise Amplifier(LNA), mixer and filter for RF front-end part of partial discharge monitoring system. The monitoring system of partial discharge in high voltage power machinery is used to prevent many kinds of industrial accidents, and is usually composed of three parts - sensor, RF front-end and digital microcontroller unit. In our study, LNA, mixer and filter are key components of the RF front-end. The LNA consists of common gate and common source-cascaded structure and uses the resistive feedback for broad band matching. A coupled line structure is utilized to implement the filter, of which size is reduced by the meander structure. The mixer is designed using dual gate structure for high isolation between RF and local oscillator signal.

• Journal of Advanced Navigation Technology
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• v.9 no.2
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• pp.103-109
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• 2005

This paper presents the design of a broadband hybrid mixer using dual-gate FET topology with a low-pass filter which improves return loss of output to isolate RF and LO signal. The low-pass filter shows the isolation with RF and LO signal of better than 40 dBc from 1.5 GHz to 5.5 GHz. The dual-gate mixer which has been designed by using cascade topology operates when the lower FET is biased in linear region and the upper FET is in saturation region. The input matching circuit has been designed to have conversion gain from 1.5 GHz to 5.5 GHz. The designed mixer with low-pass filter shows the conversion gain of better than 7 dB from 1.5 GHz to 5.5 GHz at the low LO power level of 0 dBm with the fixed IF frequency of 21.4 MHz.

• Journal of IKEEE
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• v.2 no.1 s.2
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• pp.15-23
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• 1998

In this paper, distributed mixer is studied at microwave frequency. The circuit of distributed mixer composed of gate 1,2, drain transmission lines, matching circuits in input and output terminal, DGFET's. For impedance matching of input and output port at higher frequency, image impedance concept is introduced. In distributed mixer, a DGFET's impedances are absorbed by artificial transmission line, this type of mixer can get a very broadband characteristics compared to that of current systems. A RF/LO signal is applied to each gate input port, and are excited the drain transmission line through transcondutance of the DGFET's. The output signals from each drain port of DGFET's added in same phases. We designed and frabricated the distributed mixer, and a conversion gain, noise figure, bandwidth, LO/RF isolation of the mixer are shown through computer simulation and experimentation.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.113-114
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• 2006

In this paper, dual-gate mixer has been designed and optimized to have variable conversion gain for WiBro and WLAN applications and to save power. With the LO power of 0dBm and RF power of -50dBm, the mixer shows 15dB conversion gain. When RF power increases from -50dBm to -20dBm, the conversion gain decreases to -2dB with bias change. The variable conversion gain can reduce the high dynamic range requirement of AGC burden at IF stage. Also, it can save the dc power dissipation of mixer up to 90%.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.1-10
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• 1998

A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.