• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.8
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• pp.10-21
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• 1999

This paper describes a 12bit CMOS current cell matrix D/A converter which shows a conversion rate of 65MHz and a power supply of 3.3V. Designed D/A converter utilizes current cell matrix structure with good monotonicity characteristic and fast settling time, and it is implemented by using the tree structure bias circuit, the symmetrical routing method with ground line and the cascode current switch to reduce the errors of the conventional D/A converter caused by a threshold voltage mismatch of current cells and a voltage drop of the ground line. The designed D/A converter was implemented with a $0.6{\mu}m$ CMOS n-well technology. The measured data shows a settling time of 20ns, a conversion rate of 50 MHz and a power dissipation of 35.6mW with a single power supply of 3.3V. The experimental SNR, DNL, and INL of the D/A converter is measured to be 55dB, ${\pm}0.5LSB$, and ${\pm}2LSB$, respectively.

• Journal of IKEEE
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• v.12 no.4
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• pp.255-262
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• 2008

In this paper, we proposed the novel IGBT with an additional n-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed IGBT are caused by an enhanced electron current injection efficiency which is caused by additional n-type MOS structure. In the simulation result, the proposed IGBT has the lower on state voltage of 2.65V and the shorter turn-off time of 4.5us than those of the conventional IGBT(3.33V, 5us).

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.2
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• pp.6-12
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• 1998

Thin film SOI(Silicon-on-insulator) device offer unique advantages such as reduction in short channel effects, improvement of subthreshold slope, higher mobility, latch-up free nature, and so on. But these devices exhibit floating-body effet such as current kink which inhibits the proper device operation. In this paper, the SOI NMOSFET with a T-type gate structure is proposed to solve the above problem. To simulate the proposed device with TSUPREM-4, the part of gate oxide was considered to be 30nm thicker than the normal gate oxide. The I-V characteristics were simulated with 2D MEDICI. Since part of gate oxide has different oxide thickness, the gate electric field strength is not same throughout the gate and hence the impact ionization current is reduced. The current kink effect will be reduced as the impact ionization current drop. The reduction of current kink effect for the proposed device structure were shown using MEDICI by the simulation of impact ionization current, I-V characteristics, and hole current distribution.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.3
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• pp.325-333
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• 2012

An experimental study was carried out to determine the correlation between the internal flow in a circular nozzle and elliptical nozzles with the external flow. The flow rate, spray angle and drop size were measured under various conditions of the injection pressure. Numerical simulations were attempted to investigate the internal flow structure in the elliptical nozzles, because the experimental study was limited in its measurements of flow velocity and pressure distributions in the relatively small orifice. In the case of the elliptical nozzles, the disintegration characteristics of the liquid jet were significantly different from those of the circular nozzle. Surface breakup was observed at the jet issued from the elliptical nozzles with injection pressure. This is due to the internal flow structure, which is reattached to the orifice wall at the minor axis plane of the elliptical nozzle, unlike that observed with the circular nozzle.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.4
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• pp.350-357
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• 1991

A speech recognition system based on a neural network, which can be used for telephon number services was tested. Because in Korea two different cardinal number systems, a koreanic one and a sinokoreanic one, are in use, it is necessary that the used systems is able to recognize 22 discret words. The structure of the neural network used had two layers, also a structure with 3 layers, one hidden layreformed of each 11, 22 and 44 hidden units was tested. During the learning phase of the system the so called BP-algorithm (back propagation) was applied. The process of learning can e influenced by using a different learning factor and also by the method of learning(for instance random or cycle). The optimal rate of speaker independent recognition by using a 2 layer neural network was 96%. A drop of recognition was observed by overtraining. This phenomen appeared more clearly if a 3 layer neural network was used. These phenomens are described in this paper in more detail. Especially the influence of the construction of the neural network and the several states during the learning phase are examined.

• Korea-Australia Rheology Journal
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• v.14 no.4
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• pp.189-201
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• 2002

The interaction between hydrophobically modified hydroxyethyl cellulose (hmHEC), containing approximately 1 wt% side-alkyl chains of $C_{16}$, and an anionic sodium dodecyl sulphate (SDS) surfactant was investigated. For a semi-dilute solution of 0.5 wt% hmHEC, the previously observed behaviour of a maximum in solution viscosity at intermediate SDS concentrations, followed by a drop at higher SDS concentrations, until above the cmc of surfactant when the solution resembles that of the unsubstituted polymer, was confirmed. Additionally, a two-phase region containing a hydrogel phase and a water-like supernatant was found at low SDS concentrations up to 0.2 wt%, a concentration which is akin to the critical association concentration, cac, of SDS in the presence of hmHEC. Above this concentration, SDS molecules bind strongly to form mixed micellar aggregates with the polymer alkyl side-chains, thus strengthening the network junctions, resulting in the observed increase in viscosity and elastic modulus of the solution. The shear behaviour of this polymer-surfactant complex during steady and step stress experiments was examined In great detail. Between SDS concentrations of 0.2 and 0.25 wt%, the shear viscosity of the hmHEC-polymer complex network undergoes shear-induced thickening, followed by a two-stage shear-induced fracture or break-up of the network. The thickening is thought to be due to structural rearrangement, causing the network of flexible polymers to expand, enabling some polymer hydrophobic groups to be converted from intra- to inter-chain associations. At higher applied stress, a partial local break-up of the network occurs, while at even higher stress, above the critical or network yield stress, a complete fracture of the network into small microgel-like units, Is believed to occur. This second network rupture is progressive with time of shear and no steady state in viscosity was observed even after 300 s. The structure which was reformed after the cessation of shear is found to be significantly different from the original state.

• Journal of Korean Society of Environmental Engineers
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• v.29 no.1
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• pp.47-53
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• 2007

The aim of this study is to research applicable possibility or Dry Sorbent Injection Technique(DSI) in sox removal process using Computational Fluid Dynamics(CFD) software package. It will be applied for 500MW in capacity coal-fired thermal power plant operated by South Korea N. Power Co., Ltd. The DSI process is adapted between a preheater and an EP process in the technological assembly. The numerical analysis performs in predicting and optimizing of DSI process's characteristics, which consists of structure of duct, position of injection nozzles, injection speed, and dispersion of sorbent. Computing results are shown that degree of sorbent dispersion depends on structure of duct and position of injection nozzles strongly. The highest dispersion efficiency was obtained when we set a Lobed-plate inside the duct and 6 injection nozzles on the duct(4 injection nozzles at the corners and 2 injection nozzles on upper and under walls as a rectangle duct shape). We also know that change of injection speed of sorbent doesn't have an large effect on the sorbent dispersion but it can effect to drop pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• Journal of IKEEE
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• v.14 no.1
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• pp.55-64
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• 2010

In this paper, we proposed the novel TIGBT with an additional p-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed TIGBT are caused by an enhanced electron current injection efficiency which is caused by additional p-type MOS structure. In the simulation result, the proposed TIGBT has the lower on state voltage of 1.67V and the shorter turn-off time of 3.1us than those of the conventional TIGBT(2.25V, 3.4us).

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.33 no.1
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• pp.54-61
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• 2005

Characteristics of sprays injected by gas/liquid coaxial atomizers operated at atmospheric pressure are studied using shadowgraph, mechanical patternator and PDPA. The gas-to- liquid momentum flux ratio(M) and the liquid Reynolds number(Re) are selected as key parameters in characteristics of gas/liquid coaxial sprays from the dimensional analysis. The properties of shear coaxial sprays are compared with those of swirl coaxial sprays through the macroscopic and microscopic analysis. Macroscopic similarities between shear and swirl coaxial sprays are revealed under flow conditions of high momentum flux ratio. Also, empirical correlations between the mean drop diameters(D32) and operating conditions of coaxial sprays are proposed in this paper.