• The Transactions of the Korean Institute of Power Electronics
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• v.3 no.3
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• pp.222-230
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• 1998

This paper proposes a new gate drive circuit for high power IGBTs which can reduce the harmful effect of reverse recovery current at turn-on and actively suppress the overvoltage across the driven IGBT at turn-off without a snubber circuit. The turn-on scheme decreases the rising rate of the collector current by inereasing the input capacitance at turn-on transient when the gate-emitter voltage goes above threshold voltage. It results in soft transient of the reverse recovery current with no variation in turn-on delay time. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.346-349
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• 1996

In application of high power IGBT PWM inverters, the treatable power range is considerably limited due to the overvoltage caused by the stray inductance components within the power circuit. This paper proposes a new gate drive circuit for IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off and the overvoltage across the opposite IGBT at turn-on while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage is limited much effectively at the larger collector current. The turn-on scheme is to decrease the rising rate of the collector current by increasing input capacitance during turn-on transient when the gate-emitter voltage is greater than threshold voltage. The experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.82-85
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• 2002

A compact rail to rail CMOS voltage follower is presented. The circuit is based on the symmetrical class AB voltage follower and can operate under supply voltages of ${\pm}$ 1.5 V. The proposed circuit has power dissipation of 5.2㎽ under quiescent condition and can drive ${\pm}$1.25 V to 250$\Omega$ load with a total harmonic distortion of less than 0.5 percent and cut off frequency of 237 ㎒. Although simple, the proposed circuit enables the output transistors to drive load efficiently.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.201-204
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• 2005

In this research, we have studied the development of dc-dc converter suitable for the driving of mobile instruments by using a dye-sensitized solar cell(DSC). We also have designed a interlocking circuit. The circuit makes power from DSC be saved in one battery and concurrently be discharged in the other battery. As this application, mobile devices like MP3, cellular phone are drived by using power from DSC during the daytime and they can be drived by using the saving energy of the daytime during the night. Besides, we designed dc-dc converter circuit to drive low power instruments by using NMOS switch and PMOS rectifier.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.11
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• pp.1634-1640
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• 2012

This paper develops the high-efficiency drive system of the small-size electric vehicles (EVs) driven by the brushed dc motors. A power circuit for driving the dc motor is designed with the H-bridge circuit and buck converter by considering both the efficiency and cost. In order to change smoothly the rotating direction of dc motor driven by the proposed power circuit, an operating sequence for both the field current and the armature voltage according to an accelerator pedal angle is suggested. Through the simulation studies and experimental results with the low-cost 8-bit AVR, the performances of the proposed methods are verified.

• Proceedings of the KIEE Conference
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• 2002.11d
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• pp.232-234
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• 2002

Due to development of power electronics technology, power conversion system are tend to small size, easy to use and light weight. Especially motor control system have increased concerns and interests about IPM(Intelligent Power Module) inverter, which contains protection circuit, drive circuit and power devices. So, we manufactured 3-phase inverter using DIP-IPM(Dual in-line package IPM) PS21245- E(1.5 Kw) made by MITSUBISHI Electric. Some of these features include -HVIC to Provide level shifting and gate drive for high-side IGBTs. The interface circuit between pwm controller and DIP-IPM can made by direct connection. In order to validate dynamic performance of the proposed system, the actual experiment worked out at wide speed range. The developed system is shown as a good dynamic characteristics.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.1966-1968
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• 1998

This paper describes a gate drive circuit for series connected IGBTs in high voltage applications. The proposed control criterion of the gate circuit is to actively limit the voltages during switching transients, while minimizing switching transient and losses. In order to achieve the control criterion, an analog closed loop control scheme is adopted. The performance of gate drive circuit is examined experimentally by the series connection of three IGBTs with conventional snubber circuits. The experimental results show the voltage balancing by an active control under wide variation in loads and imbalance conditions.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.804-806
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• 2003

In these days the Vacuum Circuit Breaker(VCB) is used in most medium voltage level because VCB has merits of simple structure, long life, free maintenance and environment friendly characteristics. Most of VCBs adopt mechanical spring drive mechanism to operate vacuum interrupter, but this mechanism is composed of many components and needs frequent maintenance works. In this paper, we study about the VCB drive mechanism with Permanent Magnet Actuator (PMA). Design methods and design flows about PMA are presented. The magnetic equivalent circuit is used for elementary and detailed design to determine the size of PMA. Finite Element Method (FEM) analysis is performed to evaluate the behavior characteristics of PMA in both static and transient state. Finally we manufacture sample PMA and verify FEM analysis through experiments.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.880-882
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• 1993

In this paper, a drive circuit for a bifilar-wound hybrid step motor considering mutual inductance and back-emf is investigated. For the suppression circuit, the varition of average torque and torque ripple due to the effect of mutual inductance and back-emf is presented. In order to improve the performance of the motor, a new control scheme is also proposed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.563-566
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• 2009

This paper presents a motor drive IC for automotive applications. The drive IC is dedicated to control and drive external MOSFETs which directly drive 3-phase motor with a high current. In case of driving high-side power switches, the bootstrap topology is widely used. however, it requires three bootstrap diode and three capacitor respectively. And it needs a minimum charging time to maintain high-side voltage. The motor drive IC uses a charge-pump circuit for all three high-side voltage with various protection schemes for automotive applications.