• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2000년도 봄 학술발표회논문집
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• pp.340-346
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• 2000

The vibration induced by high speed train running on rail is dealt with as an environmental problem. The train induced vibration is characterized by moving loads of specific frequency contents and soil conditions. In fact various sources are involved the wheal distance, number of cars, speed of operation, drift of rails, structural form vibration, etc. In this paper the characteristics of transferring vibration induced by the operational high-speed train is discussed. And the field measurements was conducted at region from Chungnam Yungi So-jung-myan to Chungbuk Chungwon hyun-do-myun. In the future is would be proposed the fundamental data for establishment of the countermeasure for vibrational reduction of high speed train using the results of the field measurements and quantitative prediction of the vibration level

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1996년도 추계학술발표회논문집
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• pp.134-139
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• 1996

The electron energy distributions function were analysed in sulphur hexaflouride at E/N : 500~800(Td) for a case of non-equilibrium ion in the mean electron energy. This paper describes the electron transport characteristics in SF$_{6}$ gas calculated for range of E/N values from 150~800(Td) by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters. The results gained that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches in an electron energy non-equilibrium region.n.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.39-43
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• 2001

In this paper, excess minority carrier distribution in drift and buffer layers and accumulated charges for PT IGST have been, for the first time, analytically expressed with different transient times, lifetimes and temperatures. Furthermore those parameters are also expressed with temperature to predict the transient response which are critical to the real operation. Active base region has been chosen to extract the temperature dependency of the device by including the buffer layer which is important but neglected due to the complexity up to now.

• 천문학논총
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• 제15권spc2호
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• pp.53-56
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• 2000

We investigate the critical issue on how the BBF (bursty bulk flow) is related to the substorm current wedge formation. Observationally, after analysing data sets from Geotail spacecraft at near tail and many ground magnetic observatories for 9 months period of 1996, we find three BBF events that clearly occurred at the center of the wedge with region I type FAC (field-aligned current), and two other BBF events that were seen outside the wedge sector. Theoretically, we suggest that the substorm current wedge generation by BBF is most likely when the h' VB contribution is dominant in the well-known MHD $J_{II}$ expression (Vasyliunaus, 1984) or when the divergence of the cross-tail current carried by the particle's gradient/curvature drift is predominantly sufficient at the moment of the BBF arrival at near tail.

• 대한원격탐사학회:학술대회논문집
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• 대한원격탐사학회 1999년도 Proceedings of International Symposium on Remote Sensing
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• pp.135-139
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• 1999

Wind velocity is one of the primary variables for describing atmospheric state from GMS-5. And its accurate depiction is essential for operational weather forecasting and for initialization of NWP(Numerical Weather Prediction) models. The aim of this research is to incorporate imagery from other available spectral channels and examine the error characteristics of winds derived from these images. Multi spectral imagery from GMS-5 was used for this purpose and applied to Korean region with together BoM(Bureau of Meteorology). The derivation of wind velocity estimates from low and high resolution visible, split window infrared, and water vapor images, resulted in improvements in the amount and quality of wind data available for forecasting.

• 소음진동
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• 제11권2호
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• pp.354-364
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• 2001

The vibration induced by high speed train running on rail is dealt with as an environmental problem. The train induced vibration is characterized by moving loads at specific frequencies and soil conditions. In fact, it is predicted that the vibration sources are involved the wheel distance, number of cars, speed of operation, drift of rails, structural born vibration, etc. In this paper the characteristics of transferring vibration induced by the high-speed train in operation is discussed. Field measurements was conducted at region from Chungnam Yungj So-jung-myan to Chungbuk Chungwon hyun-do-myun. In the near future. these data will be used as the fundamental data for establishment of the countermeasure for vibrational reduction of high speed train using the results of the field measurements and quantitative prediction of the vibration level

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.154-159
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• 1997

This paper describes the electron transport characteristic in SiH$_4$ gas calculated for range of E/N values from 0.5~300(Td) by the Monte Calro simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters are obtained for TOF method. The results gained that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization coefficients longitudinal and transverse diffusion coefficients, characteristics energy agree with thee experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in monosilane at EN : 30, 50(Td) for a case of equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a TOF method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.63-64
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• 2006

Here we present detailed simulation results of trench field stop IGBTs. Besides the reduced on-state voltage drop there is also an Increase of forward blocking voltage. A trench gate IGBT has low on-state voltage drop mainly due to the removal of the JFET region and a field stop IGBT has high forward blocking voltages due to the trapezoidal field distribution under blocking condition. We have simulated the static characteristics of TIGBT with field stop technology by 2D simulator(MEDICI). The simulated result of forward blocking voltage and on-state voltage drop is about 1,408V and 1.3V respectively at $110{\mu}m$ N-drift thickness.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.925-928
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• 1998

In this paper, the electron transport characteristics in $SiH_4$ has been analysed over the E/N range $0.5{\sim}300[Td]$ and Pressure value 0.5, 1, 2.5 [Torr] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity. diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte carlo simulation have been compared with experimental data by Pollock, Ohmori, cottrell and Walker.

• ETRI Journal
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• 제20권1호
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• pp.37-45
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• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.