Proceedings of the KIPE Conference (전력전자학회:학술대회논문집)
- 2001.10a
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- Pages.39-43
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- 2001
Transient Analysis of PT-IGBTs at High Temperature
- Ryu Sehwan (Department of Electrical Engineering Konkuk University) ;
- Lee Hokil (Department of Electrical Engineering Konkuk University) ;
- Ahn Hyungkeun (Department of Electrical Engineering Konkuk University) ;
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Han Deuk-Young
(Department of Electrical Engineering Konkuk University)
- Published : 2001.10.01
Abstract
In this paper, excess minority carrier distribution in drift and buffer layers and accumulated charges for PT IGST have been, for the first time, analytically expressed with different transient times, lifetimes and temperatures. Furthermore those parameters are also expressed with temperature to predict the transient response which are critical to the real operation. Active base region has been chosen to extract the temperature dependency of the device by including the buffer layer which is important but neglected due to the complexity up to now.
Keywords