• Journal of the Korean Geosynthetics Society
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• v.3 no.1
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• pp.17-25
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• 2004

A horizontal drain method, which applies vacuum pressure at the end of a horizontal drain for discharging pore water, is used often for improving surface reclaimed clay in the field. In this study, to examine the effectiveness of improving consolidation or shear strength depends by varying vacuum pressure, laboratory chamber horizontal drain test using vacuum pressure is performed and the results is compared with that of self-weight consolidation. The results show that water content reduces with the increase of soil depth in case of self-weight consolidation, while it reduces near the horizontal drain and increases with the increase of the distance from the horizontal drain in case of applying vacuum pressure. The shear strength of dredged soil was improved as well, when the vacuum pressure is applied. The optimized consolidation was achieved at the vacuum pressure range of 30 to 50kPa in the laboratory box test of 50cm wide, considering the range of drain interval in the field was between 0.7 and 1.2m.

• Proceedings of the KIPE Conference
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• 2013.11a
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• pp.165-166
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• 2013

함정의 추진체계로 전기추진체계가 선정될 경우 대용량의 전동기 및 전력변환장치가 설치된다. 전동기를 구동하여 추진력을 얻기 위해서는 발전기에서 공급하는 AC 전력을 AC에서 DC 다시 DC에서 AC로 변환하는 과정을 거치게 된다. 이 과정에서 전력용 반도체의 On/Off 동작에 의해 높은 전압상승률 (dv/dt)이 발생하며 이로 인해 함정의 선체를 통해 흐르는 누설전류가 발생하여 인접 장비에 영향을 미치게 된다. 본 논문에서는 전기추진 함정의 전자기 간섭(EMI) 현상 발생 원인에 대해 분석하고 이를 저감시키기 위한 방법으로 Drain wire를 적용하고 그 효과에 대해 분석한다.

• Structural Engineering and Mechanics
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• v.52 no.6
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• pp.1257-1271
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• 2014

The hydraulic deterioration of the drainage system in tunnel linings is one of the main factors governing long-term lining-ground interactions during the lifetime of tunnels. Thus, in the design procedure of a tunnel below the groundwater table, the possible detrimental effects associated with the hydraulic deterioration should be addressed. Hydraulic deterioration in double-lined tunnels can occur because of reasons such as clogging of the drainage layer and drain-pipe blockings. In this study, the coupled mechanical and hydraulic interactions between linings due to drain-pipe blockings are investigated using the finite-element method. A double-lined structural model incorporating hydraulic behavior is developed to represent the coupled structural and hydraulic behavior between the linings and drainage system. It is found that hydraulic deterioration hinders flow into the tunnel, causing asymmetric development of pore-water pressure and consequent detrimental effects to the secondary lining.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.206-209
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• 2006

This paper presents an analytical noise model for the drain thermal noise, the induced gate noise, and their correlation coefficient in deep-submicron MOSFETs, which is valid in both linear region and saturation region. The impedance field method was used to calculate the external drain thermal noise current. The effect of channel length modulation was included in the analytical equation. The noise behavior of MOSFETs with decreasing channel length was successfully predicted from our model.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.481-482
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• 2006

We fabricated pentacene organic thin film transistor with good uniformity. And we extracted contact resistance in organic thin film transistors from the plot of the inverse of drain current versus channel length by extrapolating the curve to a channel length of zero, and multiplying by drain-source voltage. Extracted contact resistance is about $70K{\Omega}$ at gate-drain voltage of -20 V

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.285-287
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• 2016

이황화 몰리브덴(Molybdenum disulfide: $MoS_2$)을 채널(Channel) 물질로 이용하여 metal-oxide-semiconductor(MOS) 구조를 제작하고, 효율적인 제작과정을 제시하였고 특히, Source/Drain의 Doping concentration을 조절하여 효과적인 $MoS_2$ Transistor를 제작 및 시뮬레이션 하였다. 그 후 여러 MOSFET의 특성 분석을 통하여 소자로서의 기능을 확인해보았다. 그리고 특히 채널의 전기적인 특성을 분석하고 채널 내 그리고 contact 사이의 저항 및 mobility의 특성을 알아보았는데, 그 중 Source/Drain Doping Effect와 performance 분석을 통해, 최적화된 $MoS_2$ Transistor를 찾아보았다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.821-825
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• 2004

The a-Si：H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si：H TFTs is inverted staggered. The gate electrode is formed by patterning with length of 8 ${\mu}m∼16 ${\mu}m. and width of 80∼200 ${\mu}m after depositing with gate electrode (Cr) 1500 under coming 7059 glass substrate. We have fabricated a-SiN：H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN：H (2000 ), a-Si：H(2000 ) and n+a-Si：H (500). We have deposited n+a-Si：H ,NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si：H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si：H TFTs decreasing parasitic capacitance of source-drain has channel length of 8 ~20 ${\mu}m and channel width of 80∼200 ${\mu}m. And it shows drain current of 8 ${\mu}A at 20 gate voltages, Ion/Ioff ratio of 108 and Vth of 4 volts.

• Korean Journal of Agricultural Science
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• v.24 no.2
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• pp.145-155
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• 1997

The large scaled field test by prefabricated vertical drains was performed to evaluate the superiority of vertical discharge capacity for drain materials through compare and analyze the time-settlement behavior with drain spacing and the compression index and consolidation coefficient obtained by laboratory experiments and field monitoring system. 1. The relation of measurement settlement($S_m$) versus design settlement($S_t$) and measurement consolidation ratio($U_m$) versus design consolidation ratio($U_t$) were shown $S_m=(1.0{\sim}1.1)S_t$, $U_m=(1.13{\sim}1.17)U_t$ at 1.0m drain spacing and $S_m=(0.7{\sim}0.8)S_t$, $U_m=(0.92{\sim}0.99)U_t$ at l.5m drain spacing, respectively. 2. The relation of field compressing index($C_{cfield}$) and virgin compression index($V_{cclab.}$) was shown $C_{cfield}=(1.0{\sim}1.2)V_{cclab.}$, But it was nearly same value when considered the error with determination method of virgin compression index and prediction method of total settlement. 3. Field consolidation coefficient was larger than laboratory consolidation coefficient, and the consolidation coefficient ratio($C_h/C_v$) were $C_h=(2.4{\sim}3.0)C_v$. $C_h=(3.5{\sim}4.3)C_v$ at 1.0m and 1.5m drain spacing and increased with increasing of drain spacing. 4. The evaluation of vertical discharge capacity with drain spacing from the results of the consolidation coefficient ratio showed largely superior in case the Mebra drain and Amer drain than other drain materials at 1.0m and 1.5m drain spacing, while the values showed nearly same value in case same drain spacing.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.160-162
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• 2016

A compact model of tunnel field effect transistor (TFET) has been developed. The model includes a surface potentia calculation module and a band-to-band-tunneling current module. Model comparison with TCAD shows that the mode calculates TFET surface potential and drain current accurately.

• Proceedings of the Korean Geotechical Society Conference
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• 2006.03a
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• pp.1148-1154
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• 2006

Composite discharge capacity tests and smear effect tests are carried out to estimate the parameters for the reliability-based design of vertical drain method. Also the probabilistic and deterministic solutions of radial consolidation theory are presented. It compared to the result of reliability-based design and that of deterministic design using the tested and estimated parameters. The results indicated that the drain spacing is larger the deterministic method than the probabilistic method because the former is not considered the uncertainties in the properties of soil. The divergence of methods is dependent on the probability of achieving target degree of consolidation by a given time and the coefficient of variation(COV) of the coefficient of horizontal consolidation$(c_h)$.