• Proceedings of the KIPE Conference
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• 2017.11a
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• pp.153-154
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• 2017

In this paper, a short-circuit protection function of a gate driver for SiC FET is investigated, which monitors voltage between drain and source of a FET under turn-on condition and turns off the FET if the voltage exceeds a predefined value.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1463-1465
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• 2008

We report all-ink-jet printed inorganic/organic hybrid TFTs on plastic substrates. We have investigated the optimal printing conditions to make uniform patterned layers of gate electrode, dielectrics, source/drain electrodes, and semiconductor as a coplanar type TFT in a successive manner. All ink-jet printed devices have good mechanical flexibility and current modulation characteristic even when bent.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.875-877
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• 2007

Zinc tin oxide (ZTO) sol-gel solution was synthesized for ink-jet printable semiconducting ink. Bottom-contact type TFT was produced by printing the ZTO layer between the source and drain electrodes. The transistor involving the ink-jet printed ZTO had the $mobility\;{\sim}\;0.01\;cm^2V^{-1}s^{-1}$. We demonstrated the direct-writing of semiconducting oxide for solution processed TFT fabrication.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.841-844
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• 2007

In this paper, a vertical block mura, which massively occurred in the LCD products, was investigated extensively by various methods, source drain (SD) line shift is found out to be one of the key reasons. This work to some extent, establishes theoretic hypothesis for further research and solutions similar issues.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.526-532
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• 2015

We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.339-345
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• 2016

This paper presents a two-stage power amplifier MMIC using a $0.4{\mu}m$ GaN-HEMT process. The two-stage structure provides high gain and compact circuit size using an integrated inter-stage matching network. The size and loss of the inter-stage matching network can be reduced by including bond wires as part of the matching network. The two-stage power amplifier MMIC was fabricated with a chip size of $2.0{\times}1.9mm^2$ and was mounted on a $4{\times}4$ QFN carrier for evaluation. Using a downlink LTE signal with a PAPR of 6.5 dB and a channel bandwidth of 10 MHz for the 2.6 GHz band, the power amplifier MMIC exhibited a gain of 30 dB, a drain efficiency of 32%, and an ACLR of -31.4 dBc at an average output power of 36 dBm. Using two power amplifier MMICs for the carrier and peaking amplifiers, a Doherty power amplifier was designed and implemented. At a 6 dB back-off output power level of 39 dBm, a gain of 24.7 dB and a drain efficiency of 43.5% were achieved.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.1-7
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• 2006

3-dimensional(3-D) simulations of ideal double-gate bulk FinFET were performed extensively and the electrical characteristics. were analyzed. In 3-D device simulation, we changed gate length($L_g$), height($H_g$), and channel doping concentration($N_b$) to see the behaviors of the threshold voltage($V_{th}$), DIBL(drain induced barrier lowering), and SS(subthreshold swing) with source/drain junction depth($X_{jSDE}$). When the $H_g$ is changed from 30 nm to 45nm, the variation gives a little change in $V_{th}$(less than 20 mV). The DIBL and SS were degraded rapidly as the $X_{jSDE}$ is deeper than $H_g$ at low fin body doping($1{\times}10^{16}cm^{-3}{\sim}1{\times}10^{17}cm^{-3}$). By adopting local doping at ${\sim}10nm$ under the $H_g$, the degradation could be suppressed significantly. The local doping also alleviated $V_{th}$ lowering by the shallower $X_{jSDE}\;than\;H_g$ at low fin body doping.

• Geotechnical Engineering
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• v.1 no.2
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• pp.27-40
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• 1985

This study aims at the development of computer Program for the deformation analysis of soft clay layers, and using this computer program, study the constraint effect of deformation- heaving, lateral displacement-of the soft clay layers reinforced with sheet pile at the tip of banking or improvement of soft clay layer up to hard strata, under intact state (natural) and the state of vertical drain respectively. For this study, Biot's consolidation theories and modified Cam-clay theory for constitutive equation for FEMI were selected and coupled governing equation, and christian-Boehmer's technique was applied to solve the coupled relationship. The following results are obtained. 1. Sheet pile or improvement of soft clay layer to the hard strata work well against the settlement of neighboring ground. B. In view of restriction of heaving or lateral displacement, sheet pile is not supposed to be of use. 3. Sheet pile is of effect only when vertical drain is constructed for acceleration of consolidation and load increases gradually. B. The larger the rigidity of improvement of layer to hard strata is, the less settlement occurs.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.14 no.5
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• pp.1243-1251
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• 1994

The implicit finite difference program was developed to evaluate the relationship between time and consolidation ratio within the zone of vertical drain effective radius. In the evaluation, the excess pore water pressure was considered to dissipate in two directions, namely, vertical and radial flow direction. To calculate subsoil stress increments in the soil due to multi-step embanking, the foundation soil was assumed to be an isotropic and homogeneous elastic medium and the initial excess pore water pressure was estimated by using Skempton's parameters whose condition is plane strain and elastic phase of pore pressure response within the soft ground. Regarding to the settlement estimation, immediate and primary consolidation settlements were calculated. The secondary or delayed consolidation settlement was not considered. Numerically calculated excess pore water pressure and settlements were similar to the measured data in situ. Thus, this method can be used to predict the time-consolidation ratio of each layer treated by vertical drain method.

• Geotechnical Engineering
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• v.12 no.5
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• pp.89-102
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• 1996

In order to investigate the characteristics of pressure drainage for geotextile, small-scale model tests were carried out for the horizontal and vertical geotextile drain to accelerate consolidation of foundation under embankment for the purpose of foundation reinforcement. According to the result of this study, the accumulative drainage discharge is found to increase as compressive stress of geotextile increases with logarithmic function. The drainage discharge under each step of compressive stress linearly increases with the increase of hydraulic head and its increasing rate is smaller when the compressive stress is higher. The drainage discharge shows to be greater when the number of geoteztile layers is more and the foundation material is finer. The relationship between transmissivity of geogextile and drainage discharge has positive correlation and the rate of increase is appeared to be the same regardless of foundation material and hydraulic head. And it proves that the drainage capacity of geotextile drain is determined by the transmissivity of geoteztile.