• 조명전기설비학회논문지
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• 제24권6호
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• pp.123-130
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• 2010

일반적으로 매입형 영구자석 동기전동기(IPMSM)의 초기설계는 자기등가회로법을 이용한다. IPMSM의 경우 회전자에 매입된 영구자석 배치의 자유도가 매우 높지만 자기등가회로법은 영구자석의 배치를 고려하기 어렵다. 따라서 설계변수와 응답에 대한 관측 자료로부터 해석적인 근사모형을 제시함으로써 실질적인 목적함수를 쉽게 만들 수 있는 반응표면법(RSM)을 활용하였으며 조건에 따른 관계를 예측하기 위해 필요한 실험 데이터는 유한요소법을 이용하였다. 본 논문에서는 IPMSM의 고 토크와 저 토크 리플을 위한 반응 표면법을 이용한 매입형 영구자석 동기전동기의 이층 영구자석 회전자 구조 다목적 최적 설계를 제안한다.

• 한국재료학회지
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• 제27권11호
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• pp.617-623
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• 2017

Mesoporous carbon nanofibers as electrode material for electrical double-layer capacitors(EDLCs) are fabricated using the electrospinning method and carbonization. Their morphologies, structures, chemical bonding states, porous structure, and electrochemical performance are investigated. The optimized mesoporous carbon nanofiber has a high sepecific surface area of $667m^2\;g^{-1}$, high average pore size of 6.3 nm, and high mesopore volume fraction of 80 %, as well as a unifom network structure consiting of a 1-D nanofiber stucture. The optimized mesoporous carbon nanofiber shows outstanding electrochemical performance with high specific capacitance of $87F\;g^{-1}$ at a current density of $0.1A\;g^{-1}$, high-rate performance ($72F\;g^{-1}$ at a current density of $20.0A\;g^{-1}$), and good cycling stability ($92F\;g^{-1}$ after 100 cycles). The improvement of the electrochemical performance via the combined effects of high specific surface area are due to the high mesopore volume fraction of the carbon nanofibers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• 한국산학기술학회논문지
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• 제10권7호
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• pp.1489-1496
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• 2009

비정질 인듐-갈륨-아연 산화물 박막트랜지스터를 모델링 하여서, 능동층의 구조, 두께, 평형상태의 전자밀도에 대응하는 박막트랜지스터의 특성을 연구하였다. 단일 능동층 박막트랜지스터의 경우, 능동층이 얇을 때 높은 전계효과이동도를 보였다. 문턱전압의 절대값은 능동층의 두께가 20 nm일 때 최저치를 보였으며, 문턱전압이하 기울기는 두께에 대한 의존성을 보이지 않았다. 복층구조 능동층의 경우, 하부의 능동층이 높은 평형상태 전자밀도를 가질 때보다 우수한 스위칭 특성을 보였다. 이 경우에도 능동층의 두께가 얇을 때에 높은 전계효과 이동도를 보였다. 높은 평형상태 전자밀도의 능동층의 두께를 증가시키면 문턱전압은 음의 방향으로 이동하였다. 문턱전압이하 기울기는 능동층의 구조에 대하여 특별한 의존성을 보이지 않았다. 이상과 같은 데이터는 산화물반도체 박막트랜지스터 능동층의 구조, 두께, 도핑비율을 최적화함에 효과적으로 사용될 것으로 기대된다.

• 한국태양에너지학회 논문집
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• 제28권1호
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• pp.33-42
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• 2008

Zr-O ($Zr-ZrO_2$) cermets solar selective coatings with a double cermets layer film structure were prepared using a DC (direct current) magnetron sputtering method. The typical film structure from surface to bottom substrate were an $Al_2O_3$ anti-reflection layer on a double Zr-O cermets layer on an Al metal infrared reflection layer. Optical properties of optimized Zr-O cermets solar selective coating had an absorptance of ${\alpha}\;=\;0.95$ and thermal omittance of ${\epsilon}\;=\;0.10\;(100^{\circ}C)$. The absorbing layer of Zr-O cermets coatings on glass and silicon substrate was identified as being amorphous by using XRD. AFM showed that ZF-O cermets layers were very smooth and their surface roughness were approximately $0.1{\sim}0.2 nm$. The chemical analysis of the cermets coatings were determined by using XPS. Chemical shift of photoelectron binding energy was occurred due to the change of Zr-O cermets coating structure deposited with increase in oxygen flow rate. The result of thermal stability test showed that the Zr-O cermets solar selective coating was stable for use at temperature below $350^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.385-390
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• 2023

In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.30-33
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• 2008

Using a $Ir(ppy)_3$ doped in hole and electron transport host materials, simple three layers green PHOLEDs comprising double emissive layers have been fabricated. A low driving voltage value of 3.3 V to reach a luminance of $1000\;cd/m^2$ and maximum current- and power-efficiency values of 53.9 cd/A and 57.8 lm/W are demonstrated in this simple structure phosphorescent OLED.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.777-778
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• 2006

This paper deals with the optimum rotor design approach about the multi-layer design of the buried magnets in an Interior Permanent Magnet Synchronous Motor (IPMSM), on the efficiency improvement by using Response Surface Methodology (RSM). In the multi-layer design of the prototype 15kw IPMSM, the constant amount of buried PM is split from the single-layer into double-layer design for improving the efficiency characteristics. The optimum double-layer rotor structure is built with the help of RSM analysis. The improvement of IPMSM efficiency is verified by the Finite Element Method (FEM) results comparison with the prototype single-layer IPMSM.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 1998년도 가을 학술발표회 논문집
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• pp.283-289
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• 1998

In the latticed domes which is a set of space frame, buckling is derived if the external force reaches a limitation by the lightness of the material and the minimization of the member section area. these are concerned with a geometric shape, network pattern, the number of layer, and so on. Most of all, the number of layer of the lattice dome is a important factor from the viewpoint of initial and structure design. Therefore this study compared buckling characteristics of single-layer with double-layer latticed domes and investigated the relativity of buckling-stress-ratio and member-density-ratio according to rise ratio to improve that designers could extend the range of .design selection

• 대한전자공학회논문지
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• 제22권6호
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• pp.53-57
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• 1985

APCVD SiO2 또는 PSG 및 PECVD SiN막으로 구성된 이중 또는 삼중층의 반도체 표면보호막 구조의 특성을 층배합방법, 두께 등이 다른 여러 경우에 대하여 비교분석하였다. 문턱전압의 변동, 크랙 및 핀·홀의 발생, 내습성 등의 성질을 검토한 결과, 4,000Å 이상의 두께를 가진 PSG막과 6,000Å 두께의 SiN막으로 된 이중층이 표면보호막 구조로 가장 적합하다는 결론을 얻었다.