• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.124-127
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• 2005

It has been a long time since organic solar cells were expected as a low-cost energy-conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene$(C_60)$ as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was $2.65\%$ at illumination intensity $100\;mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

• ETRI Journal
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• v.32 no.1
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• pp.112-119
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• 2010

We present a useful design for a free access mat which supports two frequency bands of 2.4 GHz and 5 GHz. The free access mat is a sheet-shaped waveguide which consists of a tightly coupled double-layered microstrip resonator array. It provides easy access for devices in short-range wireless communications. Interference is a common problem with conventional applications which use free space transmission. Our proposed wireless access system uses a subsidiary waveguide, the free access mat. Wireless devices are proximately coupled to the free access mat through which the coupled electromagnetic (EM) wave transmits. The arrival domain of the EM wave of an application is therefore limited to an area close to the free access mat. Wireless devices can be coupled to the free access mat at an arbitrary position without contact. We previously presented a free access mat for a single frequency band. This paper presents a free access mat for the two frequency bands of 2.4 GHz and 5 GHz. The free access mat uses a ring patch resonator array which is easily excited by typical antennas and is resistant to interference. These characteristics are demonstrated by numerical simulation and confirmed by experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.193-196
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• 1999

Organic electroluminescent devices have attracted a great deal of attention due to thier potential application to full-color flat-panel displays. The 8-hydroxyquinollne Zinc(Znq$_2$) were synthesized successfully from zinc chloride(ZnCl$_2$) and zinc acetate(Zn(C$_2$H$_3$O$_3$)$_2$) as green omitting material. A double-layer ELD consist of an emitting layer of B-hydroxyquinoline Zinc(Znq$_2$) and a hole-transport layer of tai-phenylene diamine(TPD) derivatives sandwiched between an Aluminium(Al) and Indium-Tin-Oxide(ITO) electrodes omitted green light resulting from Znq$_2$. The electroluminescent devices (ELD) exhibited a maximum luminance of 1000cd/$\textrm{cm}^2$ at a driving voltage of 8V and a driving current density of 0.4mA/$\textrm{cm}^2$.

• ETRI Journal
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• v.37 no.3
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• pp.523-532
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• 2015

Recently, we have witnessed the gradual miniaturization of electronic devices. In miniaturized devices, flip-chip bonding has become a necessity over other bonding methods. For the electrical connections in miniaturized devices, fine-pitch solder bumping has been widely studied. In this study, high-volume solder-on-pad (HV-SoP) technology was developed using a novel maskless printing method. For the new SoP process, we used a special material called a solder bump maker (SBM). Using an SBM, which consists of resin and solder powder, uniform bumps can easily be made without a mask. To optimize the height of solder bumps, various conditions such as the mask design, oxygen concentration, and processing method are controlled. In this study, a double printing method, which is a modification of a general single printing method, is suggested. The average, maximum, and minimum obtained heights of solder bumps are $28.3{\mu}m$, $31.7{\mu}m$, and $26.3{\mu}m$, respectively. It is expected that the HV-SoP process will reduce the costs for solder bumping and will be used for electrical interconnections in fine-pitch flip-chip bonding.

• Convergence Security Journal
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• v.24 no.1
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• pp.51-57
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• 2024

Although industrial control systems (ICSs) recently keep evolving with the introduction of Industrial IoT converging information technology (IT) and operational technology (OT), it also leads to a variety of threats and vulnerabilities, which was not experienced in the past ICS with no connection to the external network. Since various control command messages are sent to field devices of the ICS for the purpose of monitoring and controlling the operational processes, it is required to guarantee the message integrity as well as control center authentication. In case of the conventional message integrity codes and signature schemes based on symmetric keys and public keys, respectively, they are not suitable considering the asymmetry between the control center and field devices. Especially, compromised node attacks can be mounted against the symmetric-key-based schemes. In this paper, we propose message authentication scheme based on double hash chains constructed from cryptographic hash function without introducing other primitives, and then propose extension scheme using Merkle tree for multiple uses of the double hash chains. It is shown that the proposed scheme is much more efficient in computational complexity than other conventional schemes.

• Korea Science and Art Forum
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• v.34
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• pp.251-262
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• 2018

The purpose of this study is to understand how wearable computing devices are designed and how to design them in a technology based wearable device design research. Research is premised on the consideration of producers and consumers. There is wearable computer of eyeglasses, watches, clothes, and so on. The user can always wear these products comfort and use as part of the body without any sense of discomfort, and the goal is to supplement or double the ability of the human being. It should be easy to use them convenient, wear comfortable, safe and sociable at any time. For the satisfaction these conditions, the wearable computing devices have several factors. There are technical performances, visual aesthetics, Human body system and devices communication and safety. Furthermore, these factors have to match to operating system, real-time operating system and applied software. To comprehend wearable computing devices should be offered the design of the both software and hardware designed.

• The KIPS Transactions:PartC
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• v.14C no.3 s.113
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• pp.239-254
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• 2007

Ubiquitous computing supports environment to freely connect to network without restrictions of place and time. This environment enables easy access and sharing of information, but because of easy unauthorized accesses, specified security policy is needed. Especially, ubiquitous sensor network devices use limited power and are small in size, so, many restrictions on policies are bound to happen. This paper proposes double-key based light weight security protocol, independent to specific sensor OS, platform and routing protocol in ubiquitous sensor network. The proposed protocol supports safe symmetric key distribution, and allows security manager to change and manage security levels and keys. This had a strong merit by which small process can make large security measures. In the performance evaluation, the proposed light weight security protocol using double-key in ubiquitous sensor network allows relatively efficient low power security policy. It will be efficient to ubiquitous sensor network, such as smart of ace and smart home.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.308-313
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• 2006

We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under the various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

• Structural Engineering and Mechanics
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• v.64 no.3
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• pp.361-379
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• 2017

In this article, the vibration behavior of double-bonded sandwich microplates with homogeneous core and nanocomposite facesheets reinforced by carbon nanotube and boron nitride nanotube under multi physical fields such as 2D magnetic and electric fields is investigated. Symmetric and un-symmetric distributions of nanotubes are considered for facesheets of sandwich microplates such as uniform distribution and various functionally graded distributions. The double-bonded sandwich microplates rest on visco-Pasternak foundation. Material properties of sandwich microplates are obtained by the extended rule of mixture. The sinusoidal shear deformation theory (SSDT) is employed to describe displacement fields of sandwich microplates. Also, the dimensionless natural frequency is obtained by classical plate theory (CPT) and compared with the obtained results by SSDT. It can be seen that the obtained dimensionless natural frequencies by CPT are higher than SSDT. In order to study the material length scale parameters, modified strain gradient theory at micro scale is utilized and then, the equations of motion are derived using Hamilton's principle. The effects of different parameters such as foundation parameters including Winkler, shear layer and damping coefficients, various distributions and volume fraction of nanotubes, core to facesheet thickness ratio, aspect and side ratios on the dimensionless natural frequencies are discussed in details. The results of present work can be used to optimum design and control of similar systems such as micro-electro-mechanical and nano-electro-mechanical devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2183-2188
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.