• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1608-1611
• /
• 2009

Here the hydrogen passivation treatment has been adopted to enhance the performance of poly-Si crystallized by YAG laser annealing (LA poly-Si). We have investigated the effects of passivation time, passivation power and passivation temperature on the hall mobility of the LA poly-Si and analyzed the mechanism of the hydrogen passivation preliminary. It has been found that the quality of the poly-Si annealed by YAG laser could be improved after proper hydrogen plasma treatment.

• Korean Journal of Materials Research
• /
• v.12 no.3
• /
• pp.200-204
• /
• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• Structural Engineering and Mechanics
• /
• v.31 no.6
• /
• pp.639-662
• /
• 2009

A comprehensive investigation of the stochastic response of an isolated cable-stayed bridge subjected to spatially varying earthquake ground motion is performed. In this study, the Jindo Bridge built in South Korea is chosen as a numerical example. The bridge deck is assumed to be continuous from one end to the other end. The vertical movement of the stiffening girder is restrained and freedom of rotational movement on the transverse axis is provided for all piers and abutments. The longitudinal restraint is provided at the mainland pier. The A-frame towers are fixed at the base. To implement the base isolation procedure, the double concave friction pendulum bearings are placed at each of the four support points of the deck. Thus, the deck of the cable-stayed bridge is isolated from the towers using the double concave friction pendulum bearings which are sliding devices that utilize two spherical concave surfaces. The spatially varying earthquake ground motion is characterized by the incoherence and wave-passage effects. Mean of maximum response values obtained from the spatially varying earthquake ground motion case are compared for the isolated and non-isolated bridge models. It is pointed out that the base isolation of the considered cable-stayed bridge model subjected to the spatially varying earthquake ground motion significantly underestimates the deck and the tower responses.

• Advances in Energy Research
• /
• v.7 no.1
• /
• pp.21-34
• /
• 2020

Energy storage devices have received a keen interest throughout the world due to high power consumption. A large number of research activities are being conducted on electrochemical double layer capacitors (EDLCs) because of their high power density and higher energy density. In the present study, an EDLC was fabricated using natural graphite based electrodes and ionic liquid (IL) based gel polymer electrolyte (GPE). The IL based GPE was prepared using the IL, 1-ethyl-3-methylimidazolium trifluoromethanesulfonate (1E3MITF) with the polymer poly(vinyl chloride) (PVC) and the salt magnesium trifluoromethanesulfonate (Mg(CF₃SO₃)₂ - MgTF). GPE was characterized by electrochemical impedance spectroscopy (EIS), DC polarization test, linear sweep voltammetry (LSV) test and cyclic voltammetry (CV) test. The maximum room temperature conductivity of the sample was 1.64 × 10^-4 Scm^-1. The electrolyte was purely an ionic conductor and the anionic contribution was prominent. Fabricated EDLC was characterized by EIS, CV and galvanostatic charge discharge (GCD) tests. CV test of the EDLC exhibits a single electrode specific capacitance of 1.44 Fg^-1 initially and GCD test gives 0.83 Fg^-1 as initial single electrode specific discharge capacitance. Moreover, a good stability was observed for prolonged cycling and the device can be used for applications with further modifications.

• The Journal of the Acoustical Society of Korea
• /
• v.15 no.4E
• /
• pp.14-20
• /
• 1996

The double mode SAW resonator filters have the serious shortcoming that out-of-band rejection above the passband is quite poor. Hence a new structure of the double mode filter is designed with the COM (Coupling Of MOdes) theory with better out-of-band rejection characteristics while keeping all the beauties of the conventional type. The second goal of the design is to reduce the planar size of the structure so that mass productivity of low frequency devices can be improved. For those purposes, several IDT's and relfector gratings are added to or subtracted from the conventional structure so that the modification can lead to better overall performance as a filter. As results of the investigation, several new double mode SAW resonator filter structures are developed. A new structure shows 10dB more out-of-band rejection that the conventional type with 25% reduced device size. Good agreement is demonstrated between the analytical results and experimental results for an illustrative 325MHz four pole resonator filter on 64°YX LiNbO3.

• International Journal of Ocean System Engineering
• /
• v.3 no.4
• /
• pp.188-208
• /
• 2013

The motion response of floating structures should be adequately low to permit the operation of rigid risers along with dry well heads. Though Spar platforms have low heave responses under lower sea state, could become unacceptable in near resonance region of wave periods. Hence the hydrodynamic response, heave in particular, must be examined to ensure that it is minimized. To reduce heave motions, external damping devices are introduced and one such effective damping device is heave plate. Addition of heave plate can provide additional viscous damping and additional added mass in the heave direction which influence the heave motion. The present study focuses on the influence of heave plate on the hydrodynamic responses of Classic Spar in regular waves. The experimental investigation has been carried out on a 1:100 scale model of Spar with single and double heave plates in regular waves. Numerical investigation has been carried out to derive the hydrodynamic responses using ANSYS AQWA. The experimental results were compared with those obtained from numerical simulation and found to be in good agreement. The influence of disk diameter ratio, wave steepness, pretension in the mooring line and relative spacing between the plates on the hydrodynamic responses of Spar are evaluated and presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.32-35
• /
• 2002

The work focuses on the development of a Cu lead-frame with a single-sided adhesive tape for cost reduction and reliability improvement of LOC (lead on chip) package products, which are widely used for the plastic-encapsulation of memory chips. Most of memory chips are assembled by the LOC packaging process where the top surface of the chip is directly attached to the area of the lead-frame with a double-sided adhesive tape. However, since the lower adhesive layer of the double-sided adhesive tape reveals the disparity in the coefficient of thermal expansion from the silicon chip by more than 20 times, it often causes thermal displacement-induced damage of the IC pattern on the active chip surface during the reliability test. So, in order to solve these problems, in the resent work, the double-sided adhesive tape is replaced by a single-sided adhesive tape. The single-sided adhesive tape does net include the lower adhesive layer but instead, uses adhesive materials, which are filled in clear holes of the base film, just for the attachment of the lead-frame to the top surface of the memory chip. Since thermal expansion of the adhesive materials can be accommodated by the base film, memory product packaged using the lead-flame with the single-sided adhesive tape is shown to have much improved reliability. Author allied this invention to the Korea Patent Office for a patent (4-2000-00097-9).

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.3
• /
• pp.195-203
• /
• 2005

Recently, a novel multi-bit nonvolatile memory based on double gate (DG) MOSFET is proposed to overcome the short channel effects and to increase the memory density. We need more complex voltage schemes for DG MOSFET devices. In view of peripheral circuits driving memory cells, one should consider various voltage sources used for several operations. It is one of the key issues to minimize the number of voltage sources. This criterion needs more caution in considering a DG nonvolatile memory cell that inevitably requires more number of events for voltage sources. Therefore figuring out the permissible range of operating bias should be preceded for reliable operation. We found that reliable operation largely depends on the depletion conditions of the silicon channel according to charge amount stored in the floating gates and the negative control gate voltages applied for read operation. We used Silvaco Atlas, a 2D numerical simulation tool as the device simulator.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.21 no.5
• /
• pp.67-78
• /
• 1984

EAROM device is an n-channel MOS transistor with a control gate stack ed on the floating gate. On account of channel injection type, channel lengths are designed 4-8 $\mu$m and chinnel widths 5-14 $\mu$m. These devices which have fourstructures of different type control gate are designed by NMOS 5 $\mu$m design rule and fabricated by double polysilicon gate NMOS Process. Double ion implantation is applied to increase punchthrough voltage and gate-controlled channel breakdown voltage. The drain and gate voltage for programming was 13-17V and 20-25V, respectively. EPROM cell fabricated could be erased not by optical method but by electrical method. The result of charge retention test showed decrease in stored charges by 4% after 200 hours at 1$25^{\circ}C$.

• Journal of Power Electronics
• /
• v.14 no.5
• /
• pp.946-956
• /
• 2014

Cascaded H-Bridge (CHB) converters can be directly connected to medium-voltage grids without using transformers and they possess the advantages of large capacity and low harmonics. They are significant tools for providing grid connections in large-capacity renewable energy systems. However, the reliability of a grid-connected CHB converter can be seriously influenced by the number of power switching devices that exist in the structure. This paper proposes a fault-tolerant control strategy based on double zero-sequence voltage injection and DC voltage optimization to improve the reliability of star-connected CHB converters after one or more power units have been bypassed. By injecting double zero-sequence voltages into each phase cluster, the DC voltages of the healthy units can be rapidly balanced after the faulty units are bypassed. In addition, optimizing the DC voltage increases the number of faulty units that can be tolerated and improves the reliability of the converter. Simulations and experimental results are shown for a seven-level three-phase CHB converter to validate the efficiency and feasibility of this strategy.