• Journal of the Society of Naval Architects of Korea
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• v.38 no.2
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• pp.79-86
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• 2001

This study shows an attempt to generate an assembly sequence and its model for a ship block assembly using the graph theory and graph algorithms. To generate the ship block assembly, we propose four levels of the ship block assembly model such as "geometry mode1", "relational model", "sequential mode1", and "hierarchical model". To obtain the relational model, we used surface and surface intersection algorithm. The sequential model that represents a possible assembly sequence is made by using several graph algorithms from the relational model. The hierarchical model will be constructed from the sequential model in order to represent the block assembly tree and so forth. The purpose of the hierarchical model is to define an assembly tree and to generate the Bill Of Material(BOM). Lastly, the validity of the method proposed in this study is examined with application to ship block assembly models of a single type and double type according to four models mentioned above.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.240-250
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• 2010

Double Gate MOSFETs (DG MOSFETs) with doping in one or two thin layers of an otherwise intrinsic channel are simulated to obtain the transport characteristics, threshold voltage and leakage current. Two different device structures- one with doping on two layers near the top and bottom oxide layers and another with doping on a single layer at the centre- are simulated and the variation of device parameters with a change in doping concentration and doping layer thickness is studied. It is observed that an n-doped layer in the channel reduces the threshold voltage and increases the drive current, when compared with a device of undoped channel. The reduction in the threshold voltage and increase in the drain current are found to increase with the thickness and the level of doping of the layer. The leakage current is larger than that of an undoped channel, but less than that of a uniformly doped channel. For a channel with p-doped layer, the threshold voltage increases with the level of doping and the thickness of the layer, accompanied with a reduction in drain current. The devices with doped middle layers and doped gate layers show almost identical behavior, apart from the slight difference in the drive current. The doping level and the thickness of the layers can be used as a tool to adjust the threshold voltage of the device indicating the possibility of easy fabrication of ICs having FETs of different threshold voltages, and the rest of the channel, being intrinsic having high mobility, serves to maintain high drive current in comparison with a fully doped channel.

• Journal of the Korea Concrete Institute
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• v.16 no.2 s.80
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• pp.155-162
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• 2004

An analytical method to predict the time dependent flexural behavior of composite girder is presented based on sectional analysis. The time dependent constitutive relation accounting for the early-age concrete properties including maturing of elastic modulus, creep and shrinkage is derived in an incremental format by the first order Taylor series expansion. The sectional analysis calculates the axial and curvature strains based on the force and moment equilibriums. The deflection curve of the girder approximated by the quadratic polynomial function is calculated by applying to the proper boundary conditions in the consecutive segments. Numerical applications are made for the 3-span double composite steel box girder which is a composite bridge girder filled with concrete at the bottom of the steel box in the negative moment region. The calculated results are compared with those by finite element analysis results. Close agreement is observed between the two approaches.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.47 no.3
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• pp.143-146
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• 2002

This study was undertaken to learn what ratio of clipping top was the most optimum for minimizing of the decrease of root yield of over 50g in sweetpotato at early cultivation. The test variety was "Shinyulmi" which was transplanted for early cultivation on April 18. The ratios of cripping top were 5, 10, 15, 20, and 25 percents. The date of clipping top was June 20 when the shoots were transplanted for double cropping. The total length of vine, the number of branches per plant, the number of tuberous roots over 50g and average root weight over 50g were not affected by clipping top. The ratio of root yield over 50g was lower over 20 percents of clipping top. The fresh weights per plant of top and bottom were similar as compared control with 15 percents of clipping top. In conclusion, the optimum ratio of clipping top was 15 percents for maximizing of the production of the shoots in sweetpotato for double cropping. cropping.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.25 no.3
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• pp.111-116
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• 2019

Thermal insulation performance of new insulation packaging made of recycled PET nonwoven (thickness : 10 mm) was verified by conducting comparative experiment with an EPS box (thickness : 25 mm) and a double wall corrugated box (thickness : 7 mm). Three ice packs (300 g) were positioned 200 mm above the bottom inside each box, all of which are placed side by side and temperature change of 2 points (5mm under middle icepack and 130 mm under middle icepack) was recorded by data logger (GL-840, Graphtec) for 16 hours under the environment of 29℃. The new packaging box showed 75% higher insulation performance than the EPS box and 180% higher than the corrugated box. In order to figure out the reason for insulation performance difference among boxes, thermal conductivities of each box material were measured using heat flow meter (HFM436 lamda, Netzsch). U-value (thermal conductivity divided by thickness) of EPS was lower than recycled pet nonwoven by 57%, which seemed to be opposite to the result of insulation test of boxes. This was explained by high water vapor transmission rate of EPS (6 times higher than PET insulation) and air pocket effect of PET insulation.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.25 no.6
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• pp.457-473
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• 1992

The first order wave equation over a double shelf has wind stresses on both coastal boundaries and wind stress curl forcing across the shelf. In the Yellow Sea, the effect of wind stress curl can be neglected as a forcing of shelf waves. The decay distance of Kelvin waves is much greater than that of continental shelf waves so that Kelvin waves are transmitted nearly intact through the northern embayment. The numerical method of characteristics has been modified to accomodate wave propagation of opposite directions. Using a little more realistic coastline, the wave model hindcast has been improved for current velocity, but hardly for sea level. It means that Kelvin waves, which mainly determine sea levels, are affected little by the change of bottom slope. For a better hindcast of sea level, input energy of Kelvin waves transmitted from the East China Sea is needed. The basic structure of downwind flows along the coasts and upwind flows along the trough supports the seasonal circulations driven by monsoon winds in the Yellow Sea.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.3 no.1
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• pp.13-24
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• 1983

A mathematical model for the two-dimensional unsteady flow was developed by introducing Abbott's implicit finite difference operator and double sweep algorithm, which could be applied to simulate the respose of a harbor against the intrusion of long waves through the entrance connected to open sea. In order to improve its accuracy corresponding to the field phenomena, bottom resistance, Coriolis force, wind effect terms were included and wave direction and radiating effect was considered. The result of seiche test was always stable and the amplitude was accurate. Some phase shift was occured, but it could be reduced by using small values of Courant number and many points per a wave length as well. A comparision with the Ippen and Goda's theoritical and hydraulic experimental works was fulfilled.

• Korean Journal of Applied Biomechanics
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• v.14 no.1
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• pp.27-40
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• 2004

The purpose of this study was to provide basic data for improving athletic performances by analyzing the kinematic variables of the Double Backward Somersault on the Parallel Bars through the 3D motion analysis. The subjects in this study were 5 male gymnasts who were ranked as national athletes. The results are as follows. 1. A total time(Mean Time) of performance showed $2.72{\pm}0.82\;sec$. and flight time to landing after releasing was 0.87sec.(mean). In order to perform better stable flying movement, the flight time should be increased. 2. In the change of velocity of the center of mass, when the increasing ascension velocity of the upper point was high, the position in the top point was high on releasing. 3. In the position variable of the center of mass, the mean of upper-bottom position in horizontal posture was $242.1{\pm}6.5cm$, $232.8{\pm}6.4cm$ in releasing, and $265.0{\pm}5.6cm$ in the highest point. This result is explained that the position of center of mass can be raised by using elastic power when wrist raised the bar in the releasing movement. 4. The angle of shoulder joint was $271.1{\pm}14.0$. Such a big angle influences a negative effect on the releasing velocity, because trunk is not a position in the enough vertical direction. 5. The ankle of hip joint in hand-standing was $191.1{\pm}5.9$, $118.8{\pm}5.3$ in releasing, and $122.3{\pm}5.3$ in taking on. Therefore, the result suggests that trunk should be straightly raised in taking on.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.7
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• pp.1617-1622
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• 2015

This paper analyzes the ratio of tunneling current for channel doping concentration of sub-10 nm asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current in subthreshold region increases in the region of channel length of 10 nm below. Even though asymmetric DGMOSFET is developed to reduce short channel effects, the increase of tunneling current in sub-10 nm is inevitable. As the ratio of tunneling current in off current according to channel doping concentration is calculated in this study, the influence of tunneling current to occur in short channel is investigated. To obtain off current to consist of thermionic emission and tunneling current, the analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for channel doping concentration in sub-10 nm asymmetric DGMOSFET, specially with parameters of channel length, channel thickness, and top/bottom gate oxide thickness and voltage.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1489-1496
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• 2009

Amorphous indium-gallium-zinc-oxide thin-film-transistors (TFTs) were modeled successfully. Dependence of TFT characteristics on structure, thickness, and equilibrium electron-density of the active layer was studied. For mono-active-layer TFTs, a thinner active layer had higher field-effect mobility. Threshold voltage showed the smallest absolute value for the 20 nm active-layer. Subthreshold swing showed almost no dependence on active-layer thickness. For the double-active-layer case, better switching performances were obtained for TFTs with bottom active layers with higher equilibrium electron density. TFTs with thinner active layers had higher mobility. Threshold voltage shifted in the minus direction as a function of the increase in the thickness of the layer with higher equilibrium electron-density. Subthreshold swing showed almost no dependence on active-layer structure. These data will be useful in optimizing the structure, the thickness, and the doping ratio of the active layers of oxide-semiconductor TFTs.