• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.286-289
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• 2000

PHEMT's with three different doping structures, -SH(single-heterojunction), DH (double-heterojunction), and DC(doped-channel)-,were designed, fabricated and characterized to study the effect of doping layer structures on the performance of millimeter-wave PHEMT's. 0.25${\mu}{\textrm}{m}$ DH-PHEMT with below-channel doping of 1$\times$10$^{12}$ c $m^{-2}$ was superior to SH-PHEMT by 40％ in $I_{dss}$, 20％ in f/sib T/ and showed broador gm- $I_{D}$ characteristics which is advantageous to power applications DH-PHEMT showed similar DC and small-signal performance compared with DC-PHEMT. Taking the much higher carrier mobility into considerations, DH-PHEMT is believed to be the best candidate for millimeter-wave, low-noise and/or power applications.s.s.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.270-274
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• 2006

This paper proposes a Chaos Pulse Width Modulation(CPWM) technique. For generating the chaotic numbers by chaos phenomenon, chaos area $\lambda$=0.99 in bifurcation tree of the proposed double tent mapping is used. A micro-controller is used for the generation of chaos numbers and triangular carrier with chaotic frequency is obtained through the process of frequency modulation according to the generated chaos numbers. The experiments are executed with the 1.5kw induction motor coupled with a 2.5A load. The experimental results show that the voltage / current spectra are spread to a chaotic range, and the switching noise of motor is reduced by the proposed method compared to the fixed frequency PWM method.

• 대한전기학회논문지
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• 제32권7호
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• pp.234-238
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• 1983

이 논문은 단일 전하로 전달되는 이중(금속-반도체-금속) 접착 소자에서 일차원적인 수송 방정식을 정상 상태에서 마이크로 컴퓨터로 해를 구하였다. 수송방정식을 해석적으로 풀이 하기 위해 일반적으로 행하여왔던 대부분의 가정과 개략치는 본 논문에서는 배제하였다. 결과는 에너지 상태, 밀도상태, 전류-전압 특성등에 관하여 중점을 두엇다. 인가 전압의 함수로 나타낸 미분 정전 용얄의 컴퓨터에 의한 해를 제시히고 영상전하 효과로 수정법도 제시 하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.870-873
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• 1991

In this paper, We present demodulation and synchronization method of phase shift keying signal using Double Frequency Vector Technique for Reference Vector. 2nd Harmonic Vector for Reference Vector is utilized in discriminating between noise and carrier signal, and in producting correlation value for data bit logical level. And we applied this demodulator to Automatic Meter Reading System being communicated with electric distribution power lines.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.150-150
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• 2003

wide bind gap과 wurtzite hexagonal structure를 가지고 있으며 청색 발광 및 청자색 레이저 특성을 보이는 III-V족 화합물반도체 GaN는 laser diodes (LD) 및 light emitting diodes (LED) 재료로 주목받고있는 주요 전자재료이다. 본 연구에서는 GaN를 chemical vapor deposition (CVD) 법을 이용하여 vapor-liquid-solid (VLS) mechanisum에 의하여 GaN나노와이어 형태로 성장시켰다. 기판은 (001)Si을 사용하였고 suputtering을 이용하여 GaN와 AlN의 double buffer layer (DBL)를 증착시켰으며 촉매로는 Ni을 사용하였다. 또한, 원료로는 고순도 Ga금속과 NH$_3$ gas를, carrier gas로는 Ar을 사용하여 GaN/AlN/(001)Si 위에 GaN 나노와이어를 성장시켰다. 성장된 GaN 나노와이어는 DBL의 두께, Ga source의 양, 튜브 안의 압력, 튜브 안의 위치 등의 제 공정변수에 따라 tangled, straight 등의 다양한 형상을 보였으며 지름은 약 30~100 nm, 길이는 수 $\mu\textrm{m}$로 관찰되었다. GaN나노와이어의 결정성, 형상 및 발광특성 등을 x-ray diffraction (XRD), photoluminesence (PL), scanning electron microscope (SEM), transmision electron microscope (TEM) 등을 이용하여 측정하였으며 제 공정변수와의 상관관계를 규명하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1047-1052
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• 2003

Controlling carrier transport in light emitting polymers is extremely important for their efficient use in organic opto-electronic devices [1]. Here we show that the interactions between single wall carbon nanotubes (SWNTs) and conjugated polymers can be used to modify the overall mobility of charge carriers within nanotube-polymer nanocomposites. By using a unique, double emitting-organic light emitting diodes (DE-OLEDs) structure. we have characterized the hole transport within electroluminescent nanocomposites (nanotubes in poly (m-phenylene vinylene-co-2,5-dioctoxy-p-phenylene) or PmPV). We have shown using this idea that single devices with color tunability can be fabricated. It is seen that SWNTs in PmPV are responsible for hole trapping, leading to shifts in the emission wavelengths. Our results could lead to improved organic optical amplifiers, semiconducting devices, and displays.

• Biomolecules & Therapeutics
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• 제7권2호
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• pp.170-177
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• 1999

PEG-hemoglobin SB1 (SB1), which is a hemoglobin-based oxygen carrier, is intended to use as a safe blood substitute against brain ischemia and stroke. The general pharmacological profiles of SB1 were studied. The doses given were 0, 5, 10, 20 ml/kg and drugs were administered intravenously. The animals used for this study were mouse, rat and guinea pig. SB1 showed no effects on general behavior, motor coordination, spontaneous locomotor activity, hexobarbital sleeping time, anticonvulsant activity, analgesic activity, blood pressure and heart rate, left ventricular peak systolic pressure, left ventricular end diastolic pressure, left ventricular developing pressure, double product, heart rate, coronary flow rate, smooth muscle contraction using guinea pig ileum, gastrointestinal transport, gastric secretion, urinary volume and electrolyte excretion at all doses tested except the decrease of body temperature. These findings demonstrated that SB1 possesses no general pharmacological effects at all doses tested.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 추계종합학술대회
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• pp.773-776
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• 2003

본 논문에서는 p형 SiGe pMOSFET를 디자인하고 온도에 따른 전기적 특성들을 분석하였다. 채널 길이는 0.9$\mu\textrm{m}$로 하였으며, 온도는 300K와 77K일 때의 특성을 조사하였다. 게이트 전압이 -1.5V로 인가되었을 때, 실온에서는 -0.97V의 문턱전압 값을 얻었으나 77K에서는 -1.15V의 문턱전압 값을 얻었다. 이것은 실온에서의 Si pMOSFET가 갖는 문턱전압 값(-1.36V)보다 동작특성이 우수함을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.72-75
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• 1996

A hydride vapor phase epitaxy (HVPE) method is performed to prepare the GaN thin films on c-plane sapphire substrate. The full-width at half maximum of double crystal X-ray rocking curves from 20$\mu\textrm{m}$-thick GaN was 576 arcsecond. The photoluminescence spectrum measured 10 K shows the hallow bound exciton (I$_2$) line and weak donor-acceptor peak, however, there was not observed deep donor-acceptor pair recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality. The GaN layer is n-type conducting with electron mobility of 72 $\textrm{cm}^2$/V$.$sec and with carrier concentration of 6 x 10$\^$18/cm/sup-3/.

• 경영과학
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• 제11권1호
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• pp.23-37
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• 1994

This paper discusses the methodology for the operational performance of unit-load automated guided vehicles(AGVs) in a flow-shop-type flexible machining and assembly systems (FM/AS). Throughout the paper, AGVs are working as a carrier and mobile workstation. For a double-loop FM/AS, in which one loop is dedicated to machining and the other to assembly, three AGV operating strategies are proposed. Considering the entering interval and travel time of AGVs between workcenters, the strategies are developed to determine the best job sequence which minimizes the makespan and vehicle idle time. Entering times of AGVs and the required minimum number of AGVs are obtained on the basis of the best job sequence. When the number of AGVs are limited, entering times of AGVs are adjusted to maximize the utilization of AGVs.