Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Effect of Doping Layer Structures on the Performance of Millimeter-wave PHEMT's

밀리미터파 PHEMT의 도핑층 설계에 따른 특성 변화

  • 박훈 (동국대학교 전자공학과 반도체 설계 연구실) ;
  • 박진국 (동국대학교 전자공학과 반도체 설계 연구실) ;
  • 정지학 (동국대학교 전자공학과 반도체 설계 연구실) ;
  • 박현창 (동국대학교 전자공학과 반도체 설계 연구실)
  • Published : 2000.06.01
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Abstract

PHEMT's with three different doping structures, -SH(single-heterojunction), DH (double-heterojunction), and DC(doped-channel)-,were designed, fabricated and characterized to study the effect of doping layer structures on the performance of millimeter-wave PHEMT's. 0.25${\mu}{\textrm}{m}$ DH-PHEMT with below-channel doping of 1$\times$10$^{12}$ c $m^{-2}$ was superior to SH-PHEMT by 40％ in $I_{dss}$, 20％ in f/sib T/ and showed broador gm- $I_{D}$ characteristics which is advantageous to power applications DH-PHEMT showed similar DC and small-signal performance compared with DC-PHEMT. Taking the much higher carrier mobility into considerations, DH-PHEMT is believed to be the best candidate for millimeter-wave, low-noise and/or power applications.s.s.

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