• Proceedings of the IEEK Conference
• /
• 2008.06a
• /
• pp.443-444
• /
• 2008

A double-balanced frequency up-converter using the Gilbert cell structure has been designed with the TSMC $0.18\;{\mu}m$ CMOS library. The frequency up-converter consists of a Mixer core and IF / LO balun. Frequency Up-converter exhibits a 3.4 dB conversion gain with a - 7.6 dBm $P_{1dB}$ for IF power of -10 dBm and LO power of 0 dBm inputs. It also exhibits 92.2 % modulation depth as a ASK modulator.

• Journal of electromagnetic engineering and science
• /
• v.4 no.1
• /
• pp.37-42
• /
• 2004

In this paper, LNB(low noise block) downconverter MMIC is designed for Ku-band satellite communication system using InGaP/GaAs HBT high linear process. Designed MMIC consists of low noise amplifier, double balanced mixer, and IF amplifier with a total chip area of 2.6${\times}$1.1 $\textrm{mm}^2$. Designed MMIC has the characteristics of over 37.5 ㏈ conversion gain, 14 ㏈ noise figure, ripple of 3 ㏈, and output-referred $P_{1dB}$TEX>(1 ㏈ compression power) of 2.5 ㏈m with total power dissipation of 3 V, 50 mA.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.615-616
• /
• 2006

Nowadays, the need of multi-mode/multi-band transceiver is rapidly increasing, so we design a direct conversion RF front-end for multi-mode/multi-band receiver that support WCDMA/CDMA2000/WIBRO standard. It consists of variable gain reconfigurable LNA and single input double balanced Mixer and complementary differential LC Oscillator. The circuit is implemented in 0.18 um RF CMOS technology and is suitable for low-cost mode/multi-band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.11 no.1
• /
• pp.110-115
• /
• 2000

A K-band GaAs MMIC receiver module has been developed using 0.15 ${\mu}{\textrm}{m}$ HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.11 no.1
• /
• pp.84-92
• /
• 2000

A GaAs MESFET MMIC transmitter for 2.4 GHz wireless local loop handset is designed and fabricated. The transmitter consists of a double balanced active mixer and a two stage driver amplifier with voltage negative feedback. In particular, a pair of CS-CG(common source-common gate) structure compensates the reduction in dynamic range caused by unbalanced complementary IF input signals. And to suppress the leakage local power at RF port, the mixer is designed by using phase characteristic between the ports of MESFET. At the bias condition of 2.7 V and 55.2 mA, the fabricated MMIC transmitter with chip dimensions of $0.75\times1.75 mm^2$ obtains a measured conversion gain of 38.6 dB, output $P_{idB}$ of 11.6 dBm, and IMD3 at -5 dBm RF output power of -31.3 dBc. This transmitter is well suited for WLL handset.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.31 no.1A
• /
• pp.58-64
• /
• 2006

A 900-MHz band transceiver has been developed for RFID reader applications. In the transmitter, a GaAs SPST switch is used for high speed switching and low power consumption. In the receiver, a double balanced mixer is used to compress even-harmonic products. The ASK demodulator which consists of an active filter and comparator is used to reject the unwanted in band interferers. The transceiver produces a maximum transmitting power of 30 dBm and exhibits an 5 m communication range with a 6-dBi gain antenna.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.19 no.6
• /
• pp.621-629
• /
• 2008

This paper presents a low temperature co-fire ceramics(LTCC) Upconverter for a Ka-band OBS satellite transponder in order for size reduction which is one of the most important requirement for satellite components. A S-band low-pass filter(LPF), a K-band band-pass filter(BPF), and an upconverting MMIC mixer are embedded in the multi-layer structure of the upconverter. All spurious can be selectively rejected by employing a modified Elliptic low pass filter with a multi-pole structure for the S-band LPF. Also an improved performance of out-of-band rejection can be obtained. At the K-band BPF design a layer coupled configuration is employed. The upconverting mixer is an MMIC diode mixer with a double-balanced configuration. Conversion loss and isolation of the upconverter are 9 dB and 51 dBc, respectively. The size of the LTCC upconverter is only $8{\times}7{\times}0.6mm^3$ which is one-third for the thin-film based upconverter.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.16 no.2 s.93
• /
• pp.189-193
• /
• 2005

In this paper, we propose a direct conversion double-balanced down-converter fer MB-OFDM W system, which is implemented using $0.18\;{\mu}m$ CMOS technology and its measurement results are shown. The proposed down-converter adopts a resistive current-source instead of general transconductance stage using MOS transistor to achieve wideband characteristics over RF input frequency band $3\~5\;GHz$ with good gain flatness. The measured conversion gain is more than +3 dB, and gain flatness is less than 3 dB for three UWB channels. The dc consumption of this work is only 0.89 mA from 1.8 V power supply, leading to the low-power W application.