• Proceedings of the Korean Information Science Society Conference
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• 2004.04b
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• pp.697-699
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• 2004

LCD의 생산이 많아짐에 따라 LCD의 불량 검출이 중요해 지고 있다. 불랑 검사는 눈으로 확인할 수 있는 범위에서 검사가 이루어지고 있으며, 만약 눈으로 식별이 불가능한 경우 적외선 카메라나 초음파 센서를 사용하여 검사가 이루어진다. 본 논문에서는 카메라를 이용하여 LCD 패널의 표면에 있는 불량 검출을 위하여 각 Dot에 대한 R, G, B 값을 추출한 후, 추출된 픽셀을 제안된 알고리즘에 적용하여 불량을 검출하는 것을 목적으로 하고 있다.

• Journal of Korea Foundry Society
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• v.41 no.3
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• pp.241-251
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• 2021

7000-series aluminum alloys are noted for their superior strength compared with other Al alloys, and their billets are generally fabricated by direct-chill (DC) casting. Surface defects in a DC-cast aluminum billet are mainly related to exudation and the meniscus freezing phenomenon, which are influenced by alloy compositions, casting speed, and casting temperature. 7000-series aluminum alloys have a wide freezing range during solidification, which makes it easy for casting defects to occur. In this study, we investigated surface defect evolution in casting billets of Al-8Zn-2Mg-2Cu alloy fabricated by a DC casting process. The billets showed "wavy" or "dotted" surfaces. The wavy surface was formed by meniscus freezing at a lower casting speed (200 mm/min) and temperature (655 ℃). In the wavy surface, refined dendritic cells were observed in a concave region due to the constitutional supercooling caused by meniscus freezing. Meanwhile, at a higher casting temperature (675 ℃), the dotted surface was formed by pore formation. In the dotted surfaces in the billet formed at a high casting speed (230 mm/min), an exudation layer was formed by the high metallostatic head pressure. The dotted region and the smooth region had a refined dendritic morphology and a columnar morphology at the exudation layer, respectively. This is attributed to the formation of gas pores in the dotted region.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.946-949
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• 2005

This paper deals with the algorithm development that inspects defects such as Bright Defect Dots, Dark Defect Dots, and Line Defect caused by the process of LCD(Liquid Crystal Display). While most of LCD production process is automated, the inspection of LCD panel and its appearance depends on manual process. So, the quality of the inspection is affected by the condition of worker. Especially, the more LCD size increases, the more the worker feels fatigued, which causes the probability of miss judgement. So, the automated inspection is required to manage the consistent quality of the product and reduce the production costs. In this paper, to solve these problems, we developed the imaging processing algorithm to inspect the defects in captured image of LCD. Experimental results reveal that we can recognize various types of defect of LCD with good accuracy and high speed.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.1-9
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• 2019

Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.27-32
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• 2007

We have investigated photoluminescence(PL) spectra of four $In_xGa_{1-x}N(x=0.15)/GaN$ multiple quantum well(MQW) structures with different well widths in order to study a phenomenon on crystal phase separation. The asymmetic behavior of PL spectra becomes stronger with increase of the well width from 1.5 nm to 6.0 nm, which indicates dual-peak nature. Analyzing the dual-peak fit PL spectra, we have observed that the intensity of low-energy shoulder peak rapidly becomes stronger, compared to that of high-energy peak corresponding to a transition in InGaN QW. It suggests that InGaN QW has two phases with tiny different In compositions, and that In-rich(InN-like) phase forms more and more relatively than stoichiometric InGaN(x=0.15) phase by the InN phase separation mechanism as the QW width increases. PL spectrum of 6.0-nm sample shows an additional peak at low-energy lesion(${\sim}2.0\;eV$) whose energy position is almost the same as a defect band of yellow luminescence frequently observed in GaN epilayers. It may be due to a defect resulted from In deficiency formed with development of the phase separation.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.167-171
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• 2021

The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

• Proceedings of the Safety Management and Science Conference
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• 2004.05a
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• pp.283-289
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• 2004

The number of pixel defects including bright and black dots on a panel is one of the critical factors determining the quality of TFT-LCD. Since pixel defects on the TFT-LCD panels are sometimes unavoidable, manufacturers have to inspect the panels so that any panel with an unacceptable number of defects will not be delivered to the buyers. However, the buyers demand for the manufacturers to meet different pixel defects tolerances (acceptable number of pixel defects on a TFT-LCD panel) around central(tight) and peripheral(loose) inspection zones. The disagreement in quality standard among different buyers also cause confusions in screening non-confirmative products and unstable yield of production. Few research has focused on the effects of defect locations on a TFT-LCD panel on their detection probabilities and the rational division of defect inspection zones. In this research, experiments were conducted to find the detection probabilities of black dot defects with respect to their varying locations on a TFT-LCD. It is proposed a rational division of inspection zone on a TFT-LCD panel on the basis of detection probabilities of the defects. With these division of inspection zones and the mean defect detection probability within each zone, it is expected to establish a more reasonable pixel defects tolerances.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.338-338
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• 2010

지난 20여년 동안 반도체 레이저 다이오드는 주로 CD (DVD) 픽업용 (파장: 640 nm 이하) 및 통신용 (파장 1550 nm) 광원 분야에서 집중적으로 개발되어 왔다. 그러나 기술의 개발과 더불어 파장조절이 비교적 자유로워지고 광출력이 증대 되면서 기존의 레이저 고유의 영역까지 그 응용분야기 확대되고 있고, 이에 따라 고출력 반도체 레이저 다이오드의 시장 규모도 꾸준히 증가되고 있는 상황이다. 고출력 반도체 레이저 다이오드는 발진 파장 및 광출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 인 고출력 레이저 다이오드의 경우 재료가공, 펌핑용 광원 (DPSSL, 광섬유 레이저), 의료, 피부미용 (점 제거), 레이저 다이오드 디스플레이 등 가장 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. MBE(Molecular Beam Epitaxy)로 성장된 InAlAs 에피층 (epi-layer)을 사용하여 고출력을 갚는 레이저 다이오드를 제작함에 있어서, 에피층은 결함 (defect)이 없는 우수한 단결정이 요구되지만, 실제 결정 성장 과정에서는 성장온도와 Al 조성비 등의 성장 조건의 변화에 따라 전기적 광학적 특성 및 신뢰성에 큰 영향을 받는 것으로 보고되고 있다. 이에 본 연구에서는 DLTS (Deep Level Transient Spectroscopy) 방법을 이용하여 InAlAs 양자점 에피층의 깊은 준위 거동을 조사하였다. DLTS 측정 결과, 0.3eV 부근의 point defect과 0.57 ~ 0.70 eV 영역의 trap이 조사되었으며, 이는 갈륨 (Ga) vacancy와 산소 원자의 복합체에 기인한 결함으로 분석된다.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.216-222
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• 2006

In this paper, we investigated the effect of hydrogen-plasma (H-plasma) treatment on the electrical and optical properties of a quantum dot infrared photodetector (QDIP) with a 5-stacked InAs dots in an InGaAs/GaAs well structure and $Al_{0.3}Ga_{0.7}As/GaAs$ SL (superlattice) current blocking layer. It has been observed that H-plasma treatment didn't affect the band structure of QDIP. It has been also observed that the H-plasma treatment on the QDIP not only enhance the electrical property of QDIP by curing the defect channels in $Al_{0.3}Ga_{0.7}As/GaAs$ SL but also introduce defects in QDIP structure. The H-plasma treatment for 10 min with 20 W of RF power provided the lowest dark current, which made it possible to measure the photo-current (PC) of QDIP whose PC was not detectable without the H-plasma treatment due to the high dark current.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.