• Current Photovoltaic Research
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• v.3 no.4
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• pp.130-134
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• 2015

The high efficiency cell research processes through the KF post deposition treatment (PDT) of the $Cu(In,Ga)Se_2(CIGS)$ thin film has been very actively progress. In this study, it CIGS thin film deposition process when KF PDT 300 to the processing temperature, 350, $400^{\circ}C$ changed to soda-lime glass (SLG) efficiency of the CIGS thin film characteristics, and solar cell according to Na presence of diffusion from the substrate the effects were analyzed. As a result, the lower the temperature of KF PDT and serves to interrupt the flow of current K-CIGS layer is not removed from the reaction surface, FF and photocurrent is decreased significantly. Blocking of the Na diffusion from the glass substrate is significantly increased while the optical voltage, photocurrent and FF is a low temperature (300, $350^{\circ}C$) in the greatly reduced, and in $400^{\circ}C$ tend to reduce fine. It is the presence of Na in CIGS thin film by electron-induced degradation of the microstructure of CIGS thin film is expected to have a significant impact on increasing the hole recombination rate a reaction layer is formed of the K elements in the CIGS thin film surface.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1489-1496
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• 2009

Amorphous indium-gallium-zinc-oxide thin-film-transistors (TFTs) were modeled successfully. Dependence of TFT characteristics on structure, thickness, and equilibrium electron-density of the active layer was studied. For mono-active-layer TFTs, a thinner active layer had higher field-effect mobility. Threshold voltage showed the smallest absolute value for the 20 nm active-layer. Subthreshold swing showed almost no dependence on active-layer thickness. For the double-active-layer case, better switching performances were obtained for TFTs with bottom active layers with higher equilibrium electron density. TFTs with thinner active layers had higher mobility. Threshold voltage shifted in the minus direction as a function of the increase in the thickness of the layer with higher equilibrium electron-density. Subthreshold swing showed almost no dependence on active-layer structure. These data will be useful in optimizing the structure, the thickness, and the doping ratio of the active layers of oxide-semiconductor TFTs.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.3
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• pp.827-834
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• 2010

We have performed numerical simulations of the electrical characteristics for multi-layer organic light emitting diode devices with doped emitting layer using a commercial simulation program. In this paper, the basic structure consists of the ITO/NPB/$Alq_3$:C545T(%)/$Alq_3$/LiF/Al, four devices that were composed of $Alq_3$ as the host and C545T as the green dopant with different concentration, were studied. As the result, the variations of the doping concentration rate of C545T have a effect on the voltage-current density characteristics. The voltage-current characteristics are quite consistent with the results which were experimentally determined in a previous reference paper. In addition, the voltage-luminance characteristics were greatly improved, and the luminous efficiency was improved three times. In order to analyze these driving mechanism, we have investigated the distribution of electric field, charge density of the carriers, and recombination rates in the inner of the OLED devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.171-171
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• 2010

GaN 기반 Light emitting diodes(LEDs)의 p-type doping layer는 일반적으로 hole을 발생시키는 acceptor로 Mg이 사용하되고 있다. 보통 Mg이 도핑된 p-type GaN은 >$1\;{\Omega}{\cdot}cm$의 저항이 존재하는데 그 이유는 Mg의 열적 이온화를 위한 activation 에너지가 높아서 상온에서 valence band의 hole concentration는 전체 억셉터 농도의 1%가 되지 않기 ��문이다. 본 논문에서는 높은 hole 농도를 얻기 위해서 metalorganic chemical-vapor deposition (MOCVD)를 장비를 사용하여 사파이어 기판의 misorientation-angle에 따른 p-type a-plane(11-20) GaN 특성을 분석하였다. misorientation-angle은 c축 방향으로 $+0.15^{\circ}$, $-0.15^{\circ}$, $-0.2^{\circ}$, $-0.4^{\circ}$ off된 r-plane(1-102) 사파이어 기판 을 사용하였다. p-type 도핑물질로 bis-magnesium (Cp2Mg) 소스를 사용하였고 성장 과정중 발생하는 hydrogen passivation으로 인한 Mg-H complexes현상을 해결하기위해 conventional furnace annealing (CFA)와 rapid thermal annealing (RTA)를 이용하여 열처리 공정을 진행하였다. 열처리 공정은 Air와 N2 분위기에서 $650^{\circ}C$에서 $900^{\circ}C$ 사이의 다양한 온도에서 수행하였고 Hall 측정을 위해 Ni을 전극 물질로 사용하였다. 상온에서 Accent HL5500IU Hall system을 사용하여 hole concentration, mobility, specific resistance을 측정하였다. 열처리 공정 후 Hall측정 결과 $+0.15^{\circ}$, $-0.15^{\circ}$, $-0.2^{\circ}$, $-0.4^{\circ}$ off된 각 샘플들은 온도, 시간, 분위기에 따라 hole concentration ($7.4{\times}10^{16}cm^{-3}{\sim}6{\times}10^{17}cm^{-3}$), mobility(${\mu}h=\;1.72\;cm^2/V-s\;{\sim}15.2\;cm^2/V-s$), specific resistance(4.971 ohm-cm ~8.924 ohm-cm) 가 변화됨을 확인 할 수 있었다. 또한 광학적 특성을 분석하기 위해 Photoluminescence (PL)을 측정하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.257-257
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

• Bulletin of the Korean Chemical Society
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• v.15 no.9
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• pp.713-718
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• 1994

Manganese-incorporated neodymium oxide systems with a variety of Mn mol% were prepared to investigate the effect of doping on the electrical properties of neodymium oxide. XRD, XPS, SEM, DSC, and TG techniques were used to analyze the specimens. The systems containing 2, 5, 8, and 10 mol% Mn were found to be solid solutions by X-ray diffraction analysis and the lattice parameters were obtained for the single-phase hexagonal structure by the Nelson-Riley method. The lattice parameters, a and c, decreased with increasing Mn mol%. Scanning electron photomicrographs of the specimens showed that the grain size decreased with increasing Mn mol%. The curves of log conductivity plotted as a function of 1/T in the temperature range from 500 to 1000$^{\circ}C$ at $PO_2$'s of $10^{-5}$ to $10^{-1}$ atm for the specimens were divided into high-and low-temperature regions with inflection points near 820-890$^{\circ}C$. The activation energies obtained from the slopes were 0.53-0.87 eV for low-temperature region and 1.40-1.91 eV for high-temperature region. The electrical conductivities increased with increasing Mn mol% and $PO_2$, indicating that all the specimens were p-type semiconductors. At $PO_2$'s below $10^{-3}$ atm, the electrical conductivity was affected by the chemisorption of oxygen molecule in the temperature range of 660 to 850$^{\circ}C$. It is suggested that electron holes generated by oxygen incorporation into the oxide are charge carriers for the electrical conduction in the high-temperature region and the system includes ionic conduction owing to the diffusion of oxygen atoms in the low-temperature region.

• Journal of Magnetics
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• v.18 no.1
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• pp.34-38
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• 2013

This paper studies the effects of the Mn-site substitution by nickel on the magnetic properties and the magnetocaloric properties of $La_{0.7}Ca_{0.3}Mn_{1-x}Ni_xO_3$ (x = 0, 0.05 and 0.1). The orthorhombic crystal structures of the samples are confirmed by the room temperature X-ray diffraction. The dependence of the Curie temperature ($T_C$) and the magnetic entropy change (${\Delta}S_M$) on the Ni doping content was investigated. The samples with x = 0 had the first order phase transition, while the samples with x = 0.05 and 0.1 had the second order phase transition. As the concentration of Ni increased, the maximum entropy change (${\mid}{\Delta}S_M{\mid}_{max}$) decreased gradually, from 2.78 $J{\cdot}kg^{-1}{\cdot}K^{-1}$ (x = 0) to 1.02 $J{\cdot}kg^{-1}{\cdot}K^{-1}$ (x = 0.1), in a magnetic field change of 15 kOe. The measured value of $T_C$ was 185 K, 150 K and 145 K for x = 0, 0.05 and 0.1, respectively. The phase transition temperatures became wider as x increased. It indicates that the Mn-site substitution by Ni may be used to tailor the Curie temperature in $La_{0.7}Ca_{0.3}Mn_{1-x}Ni_xO_3$.

• Journal of IKEEE
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• v.23 no.3
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• pp.832-838
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• 2019

In this paper, 4H-SiC MOSFET, the next generation power semiconductor device, was studied. In particular, Semi-SJ MOSFET structures with improved electrical characteristics than conventional DMOSFET structures were proposed in the class of 3300V, and static characteristics of conventional and proposed structures were compared and analyzed through TCAD simulations. Semi-SuperJunction MOSFET structure is partly structure that introduces SuperJunction, improves Electric field distribution through the two-dimensional depletion effect, and increases breakdown voltage. Benefit from the improvement of breakdown voltage, which can improve the on resistance as high doping is possible. The proposed structure has a slight reduction in breakdown voltage, but has an 80% decrease in on resistance compared to the conventional DMOSFET structure, and a 44% decrease in on resistance compared to the Current Spreading Layer(CSL) structure that improves the conventional DMOSFET structure.

• Korean Journal of Materials Research
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• v.31 no.8
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• pp.439-444
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• 2021

The oxidation resistance of the diffusion aluminide bond coat (BC) is compromised largely by interdiffusion (ID) effects on coated turbine blades of aeroengines. The present study is designed to understand the influence of ID on βNiAl coatings or BC. In this regard, nickel substrate and CMSX-4 superalloy are deposited. In total, four sets of BCs are developed, i.e. pure βNiAl (on Ni substrate), simple βNiAl (on CMSX-4 substrate), Zr-βNiAl (on CMSX-4 substrate) and Pt-βNiAl (on CMSX-4 substrate). The main aim of this study is to understand the interdiffusion of Al, Zr and Pt during preparation and oxidation. In addition, the beneficial effects of both Zr and platinum are assessed. Pure βNiAl and simple βNiAl show Ni-out-diffusion, whereas for platinum inward diffusion to the substrate is noticed under vacuum treatment. Interestingly, Zr-βNiAl shows the least ID in all BCs and exhibit stability under both vacuum and oxidation treatments. However, its spallation resistance is slightly lower than that of Pt-βNiAl BC. All BCs show similar oxide growth trends, except for Zr-βNiAl, which exhibits two-stage oxidations, i.e. transient and steady-state. Moreover, it is suggested that the localized spallation in all BCs is caused by βNiAl - γ'-Ni₃Al transformation.