• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.93-96
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• 2000

In this study, we investigated the electromagnetic properties of Mn-Zn ferrite doped with rare earth oxide (Dy$_2$O$_3$, Er$_2$O$_3$). The main composition is 52mo1% $\alpha$-Fe$_2$O$_3$, 25mo1% Mn$_3$O$_4$23mo1% ZnO and doped with them(0.05wt%~0.25wt%, step:0.05wt%). An experimental process has advanced by conventional ferrimagnetism manufacturing that was prepared by standard ceramic techniques. The XRD pattern of all doped sample were observed spinel and secondary phase. The density of sample were measured nearly constant value. As increased the additive, resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. In case of Mn-Zn ferrite excess doped with them, resistivity, initial permeability and real component of the series complex permeability decreased and magnetic loss increased in proportion to increasing the additive.

• 한국세라믹학회지
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• 제23권6호
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• pp.52-58
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• 1986

$Pb(Zr_{0.525} Ti_{0.475})O_3$ piezoelectric ceramics both unmodified and doped with NiO were prepared by the conventional oxide techniques using sintering temperature from 900 to to 125$0^{\circ}C$. The difference in densification process between unmodified and NiO doped PZT ceramics was studied by shrinkage vs. firing temperatures and it was caused by increasing defect concentration in calcining process of NiO doped PZT ceramics. And nickel oxide solubility limit for $Pb(Zr_{0.525} Ti_{0.475})O_3$ ceramics is shown to be at the range from 0.2wt% to 0.5wt% from this defect model micro-structures dielectric and piezolectric properties of Nio doped PZT ceramics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.93-96
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• 2000

In this study, we investigated the electromagnetic properties of Mn-Zn ferrite doped with rare earth oxide (Dy$_2$O$_3$, Er$_2$O$_3$). The main composition is 52mo1% ${\alpha}$-Fe$_2$O$_3$, 25mol% Mn$_3$O$_4$ 23mo1% ZnO and doped with them(0.05wt% ∼ 0.25wt%, step:0.05wt%). An experimental process has advanced by conventional ferrimagnetism manufacturing that was prepared by standard ceramic techniques. The XRD pattern of all doped sample were observed spinel and secondary phase. The density of sample were measured nearly constant value. As increased the additive, resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. In case of Mn-Zn ferrite excess doped with them, resistivity, initial permeability and real component of the series complex permeability decreased and magnetic loss increased in proportion to increasing the additive.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.311-324
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• 2018

Herein,the Neodymium ion ($Nd^{3+}$) doped CoAl-LDH have been successfully prepared via co-precipitation method and was used as a precursor of Nd-doped CoAl-mixed metal oxides (MMO). The photocatalytic activity of doped LDH and MMO was investigated in the degradation of an azo dye, C.I. Acid Red 14, under visible light irradiation. DRS and PL analysis demonstrated decreasing in the band gap energy and recombination of photo-induced charge carriers of Nd-doped LDH and MMO compared with the pristine CoAL-LDH. Due to significant difference in photocatalytic performance. A power law empirical kinetic model was obtained for predicting the photocatalytic degradation efficiency.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.219-223
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• 2009

$TiO_2$ doped with $Er^{3+\;and\;Yb^{3+}$ was used for fabricating a scattering layer and a nano-crystalline $TiO_2$ electrode layer to be used in dye-sensitized solar cells. The material was prepared using a new sol-gel combustion hybrid method with acetylene black as fuel. The $Er^{3+}$-$Yb^{3+}$ co-doped titanium oxide powder synthesized at 700oC had embossed structure morphology with a size between 27 to 54 nm that agglomerated to produce micron size particles, as observed by the scanning electron micrographs. The XRD patterns showed that the $Er^{3+}$-$Yb^{3+}$ co-doped titanium oxide had an amorphous structure, while using the same method without doping $Er^{3+}\;or\;Yb^{3+},\;TiO_2$ was obtained in the crystallite form with thea dominance of rutile phase. Fabricating a bilayer structure consisting of nano-crystalline $TiO_2$ and the synthesized $Er^{3+}$-$Yb^{3+}$ co-doped titanium oxide showed better scattering property, with an overall increase of 15.6% in efficiency of the solar cell with respect to a single nano-crystalline $TiO_2$ layer.

• 한국세라믹학회지
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• 제50권6호
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• pp.439-445
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• 2013

Both an unreinforced $Al_2O_3$/Al matrix and a ${\alpha}-Al_2O_3$ particulate reinforced composite have been produced by the oxidation of an Al surface doped with NaOH in the absence of any other dopant. Fabrication of the matrix was initiated by the formation of $NaAlO_2$, which provides a favorable surface structure for the matrix formation by breaking the protective $Al_2O_3$ layer on Al. During the matrix growth, the external surface of the growth front was covered with a very thin sodium-rich oxide. A cyclic formation process of the sodium-rich oxide on the growth surface was proposed for the sodium-induced directed metal oxidation process. This process involves dissolution of the sodium-rich oxide, motion of Na to the growth front, and re-formation of the oxide on the surface. Near-net-shape composites were fabricated by infiltrating an $Al_2O_3$/Al matrix into a ${\alpha}-Al_2O_3$ particulate preform, without growth barrier materials. The infiltration distance increased almost linearly in the NaOH-doped preform.

• 한국산학기술학회논문지
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• 제16권2호
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• pp.1555-1562
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• 2015

금속 산화물 반도체는 독특한 전기 광학적 특성, 높은 표면적 등으로 인해 태양전지, 센서, 광소자 및 디스플레이 등 여러 분야에 걸쳐 응용되고 있다. 금속 산화물 가운데 우수한 물리 화학적 특성을 가지는 산화아연은 3.37 eV의 넓은 밴드갭 에너지와 60 meV의 큰 엑시톤 결합에너지를 갖는 n-형 반도체로서 산화아연에 양이온을 도핑하여 전기 광학적 특성을 보완하는 연구가 진행되고 있다. 본 연구는 알루미늄이 도핑 된 산화아연을 마이크로파 수열합성법으로 합성하였다. 전구체의 종류와 몰 비 등의 반응 변수를 조절하여 최적의 결정형상과 광학적 특성을 갖는 산화아연을 합성하였으며, 알루미늄을 도핑하여 광학적 특성 변화를 시도하였다. 합성된 입자는 SEM, XRD, PL, UV-Vis 분광기 및 EDS 등의 기기분석을 통해 광학적, 물리 화학적 특성을 확인하였다.

• 한국세라믹학회지
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• 제31권1호
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• pp.74-78
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• 1994

Degradation of thin oxide by doped poly-Si and its improvement were studied. The gate oxide can be degraded by phosphorous in poly-Si doped POCl3. The degradation is increased with the decrement of sheet resistance and poly-Si thickness. Oxide failures of amorphous-Si are higher than those of poly-Si. In-situ double deposition of amorphous-Si, 54$0^{\circ}C$/30 nm, and poly-Si, 6$25^{\circ}C$/220 nm, forms the mismatch structure of grain boundary between amorphous-Si and poly-Si, and suppresses the excess phosphorous on oxide surface by the mismatch structure. The control of phosphorous through grain boundary improves the oxide reliability.

• The Korean Journal of Ceramics
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• 제4권2호
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• pp.156-161
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• 1998

We have measured changes of the non-stoichiometry, $\Delta\delta$, in Fe-doped nicked oxide , by thermogravimetry for four iron fractions, x=0.01, 0.031, 0.057 and 0.10, and three temperatures, T=1273, 1373 and 1473 K. The obtained data can be modelled by a defect structure in which substitutional trivalent iron ions, FeNi, are compensated by cation vacancies, $V_{Ni}$", and (4:1)-clusters. These clusters consist of tetravalent interstitial iron, $Fe_i\;^4$

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.5-9
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• 2015

Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.