• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.138-143
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• 2002

In this study, ZnS: Cu nano-crystals are synthesized by solution synthesis technique (SST). The structural properties such as crystal structure and particle morphology, and the optical properties such as light absorption/transmittance, energy bandgap, and photoluminescence (PL) excitation/emission are investigated. In an attempt to realize the Cu-doping easiness, the synthesis temperature (~$80^{\circ}C$) is applied to the synthesis bath, and the thiourea is used as sulfur precursor, unlike other general chemical synthesis route. Both undoped ZnS and ZnS : Cu nano-crystals have the cubic crystal structure and have the spherical particle shape. The position of light absorption edge is ~305 nm, indicating the occurrence of quantum size effect. The PL emission intensity and line-width are maximum and minimum, respectively, for Cu-doping concentration 0.03M. In particular, the dependence of PL intensity and line-width on the Cu-doping concentration for ZnS : Cu nano-crystals synthesized by SST is reported for the first time in this study. Experimental results of the absorption edge and the PL excitation show that the main emission peak of ZnS : Cu nano-crystals (~510 nm) in this study is due to the radiative recombination center in the energy bandgap induced by Cu dopant.

• Polymer(Korea)
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• v.25 no.1
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• pp.6-14
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• 2001

The monomer N,N'-bis(3-pyrrol-1-yl-propyl)-4,4'-bipyridinium$(PF_6)_2$ was electrochemically polymerized on glassy carbon electrode surface. This polymer film electrode has electroactive sites on its bipyridinium ions distributed at the polymer strands. The formal potentials of the electrodes were -0.41V and -0.81V(vs. SSCE) for each step at phosphate buffer(pH=5.70). The diffusion coefficients of the dopants ions into the polymer matrix were $1.57{\times}10^{-4}$ and $4.35{\times}10^{-5}cm^2s^{-1}$ for first and second redox couple, respectively. The rate constants of electron transfer at $V^{2+/+}$ of the first step was a $57.53s^{-1}$, which was 22 times higher than $V^{+/0}$ one having $2.63s^{-1}$ in the solution. The charge transfer resistance of the polymer film was influenced by the dopant ion of the electrolyte. Thus the resistances were 22.63, 16.81, 12.44 and $11.36k{\Omega}$ for $LiClO_4,\;NaClO_4,\;KClO_4$, and phosphate buffer, respectively. The reaction order of the electropolymerization was first order and the rate constant of the polymerization was $1.31{\times}10^{-1}s^{-1}$ as determined by EQCM method. The G.C./p-BPB type electrode doped with phosphate ions showed a stability and reproducibility in CV procedure over 20 cycles.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.10
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• pp.4660-4665
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• 2011

New precursors as a Li adsorbent, $Li_{1.6}(MnM)_{1.6}O_4$ (M=Cu, Ni, Co, Fe), were synthesized by hydrothermal method and their physicochemical properties were discussed. XRD and HRTEM results revealed that the original spinel structure was stabilized by cobalt-doping while Cu-, Ni- and Fe-doping led to structural changes. Such a structural stabilization by Cobalt-doping was maintained after lithium leaching by acid treatment. Li absorption efficiency from seawater was significantly enhanced by using the Cobalt-doped spinel manganese oxide, $Li_{1.6}[MnCo]_{1.6}O_4$, compared to the commercially available $Li_{1.33}Mn_{1.67}O_4$; the adsorbed amount of Li from 1g-adsorbent was 35 and 16 mg by $Li_{1.6}[MnCo]_{1.6}O_4$, and $Li_{1.33}Mn_{1.67}O_4$, respectively.

• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.172-178
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• 1997

Polyaniline(PANI)-stearic acid(SA) composite monolayer was formed at the air-water interface. The stearic acid as a surfactant was used to promote PANI monolayer formation. Uniform PANI-SA monolayer assemblies with Y type and transfer ratio of ca. 1 were fabricated using the Langmuir-Blodgett(LB) technique. The PANI-SA composite LB films with high electrical conductivity of $10^{-1}{\sim}10^{-2}S/cm$ were obtained by doping of HCl or $I_2$, and their conductivity revealed essentially close value as that of conventional PAHI-HCl complex. Especially, iodine is found to be the most promising dopant, since it gives a remarkable stability for the application as a polymer electrode in the MIM molecular device consisted of acceptor, sensitizer, and donor. The structure and physical properties of PANI-SA LB films were investigated through the near-ir UV, FT-IR, and Cyclic voltammetry.

• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.216-221
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• 1995

Both manufacturing parameters and particles' chemical composition controll coercivity and its distribution of magnetic particles. The coercivity and its distribution are important properties for high density magnetic recording, so these are used as tool for evaluation of reproducibility of magnetic particles. We report in this paper the applications of dM/dH versus H curve, which is derived from magnetic hysteresis loop, to the evaluation of coercivity distribution of magnetic particles and oxidation studies of recording metal particles. The coercivity distri-bution can be estimated from the full width half rnaximun (FWHM) and the peak shape of the dM/dH versus H curve. The peak shape of the curve depends upon distribution of particles' coercivity. The peak of dM/dH versus H curve becomes broad and lor is splitted into two or rmre peaks. It depends on uniformity of particles' coercivity. When the coercivity difference between Ba-Ferrite and ${\gamma}-Fe_{2}O_{3}$ is larger than 600 Oe, the peak becomes broad and is consequently splitted into two peaks. Ununiformly substituted Ba-Ferrite particles show broad peak. It is apparent that the analysis of the curve is one of sensitive measuring techniques for determination of coercivity distri-bution and studies on magnetic properties of substituted Ba-Ferrite and oxidation of magnetic recording metal particles.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.358-359
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• 2012

최근 분극 특성이 상이한 무분극 GaN 에피성장에 관한 심도 있는 연구와 함께 전자-전공 캐리어의 주입 및 캐리어의 거동, 방출되는 편광 특성 및 다양한 물리적 특성들에 대해 보고되고 있으며, 광학적 특성 및 물리적 특성의 확보를 위한 많은 연구가 활발히 진행 중이다 [1]. GaN의 ohmic 접촉(ohmic contact)의 형성은 발광 다이오드(light emitting diode), 레이저 다이오드(Laser), 태양전지(solar cell)와 같은 고신뢰도, 고효율 광전자 소자를 제조하기 위해서는 매우 중요하다 [2]. 그러나 이와 함께 병행 되어야 할 무분극 p-GaN 의 ohmic contact에 관한 연구는 많이 이루어지고 있지 않는 실정이다. 따라서 본 논문에서는 r-plane 사파이어 기판 상에 성장된 p-GaN에서의 ohmic 접촉 형성 연구를 위하여 Ni/Au ohmic 전극의 접촉저항 특성을 연구하였다. 본 실험에서는 성장된 a-plane GaN의 Hole농도가 $3.09{\times}1017cm3$ 인 시편을 사용하였다. E-beam evaporation 장비를 이용하여 Ni/Au를 각각 20 nm 그리고80 nm 증착 하였으며 비접촉저항을 측정하기 위해 Circle-Transfer Length Method (C-TLM) 패턴을 사용하였다. 샘플은 RTA (Rapid Thermal Annealing)를 사용하여 $300^{\circ}C$에서 $700^{\circ}C$까지 온도를 변화시키며 전기적 특성을 비교하여 그림 1(a) 나타내었다. 그림에서 알 수 있듯이 $400^{\circ}C$에서 가장 낮은 비접촉저항 값인 $6.95{\times}10-3{\Omega}cm2$를 얻을 수 있음을 발견하였다. 이 때의 I-V curve 도 그림1(b)에 나타낸 바와 같이 열처리에 의해 크게 향상됨을 알 수 있다. 그러나, $500^{\circ}C$ 이상 온도를 증가시키면 다시 비접촉 저항이 증가하는 것을 관찰하였다. XRD (x-Ray Diffraction) 분석을 통하여 $400^{\circ}C$ 이상열처리 온도가 증가하면 금속 표면에 $NiO_2$가 형성되며, 이에 따라 오믹특성이 저하 된다고 사료된다. 또한 $Ni_3N$의 존재를 확인 하였으며 이는 nonpolar surface의 특성으로 인해 nitrogen out diffusion 현상이 동시에 발생하여 계면에는 dopant로 작용하는 질소 공공을 남기고 표면에 $Ni_3N$을 형성하여 ohmic contact의 특성이 저하되기 때문인 것으로 사료된다.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.733-741
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• 1996

In this study MeV Si self ion implantations were done to reveal the intrinsic behavior of defect formation by excluding the possibility of chemical interactions between substrate atoms and dopant ones. Self implantations were conducted using Tandem Accelerator with energy ranges from 1 to 3 MeV. Defect formation by high energy ion implantation has a significant characteristics in that the lattice damage is concentrated near Rp and isolated from the surface. In order to investigate the energy dependence on defect formation, implantation energies were varied from 1 to 3 MeV under a constant dose of $1{\times}10^{15}/cm^2$. RBS channe!ed spectra showed that the depth at which as-implanted damaged layer formed increases as energy increases and that near surface region maintains better crystallinity as energy increases. Cross sectional TEM results agree well with RBS ones. In a TEM image as-implanted damaged layer appears as a dark band, where secondary defects are formed upon annealing. In the case of 2 MeV $Si^+$ self implantation a critical dose for the secondary defect formation was found to be between $3{\times}10^{14}/cm^24$ and $5{\times}10^{14}/cm^2$. Upon annealing the upper layer of the dark band was removed while the bottom part of the dark band did not move. The observed defect behavior by TEM was interpreted by Monte Carlo computer simulations using TRIM-code. SIMS analyses indicated that the secondary defect formed after annealing gettered oxygen impurities existed in silicon.

• Korean Chemical Engineering Research
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• v.40 no.6
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• pp.752-756
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• 2002

Green-emitting $Zn_2SiO_4:Mn$ phosphors for PDP(Plasma Display Panel) application were synthesized by colloidal seed-assisted spray pyrolysis process. The codoping with $Gd^{3+}/Li^+$, which replaces $Si^{4+}$ site in the willemite structure, was performed to improve the luminous properties of the $Zn_2SiO_4:Mn$ phosphors. The particles prepared by spray pyrolysis process using fumed silica colloidal solution had a spherical shape, small particle size, narrow size distribution, and non-aggregation characteristics. The $Gd^{3+}/Li^+$ codoping amount affected the luminous characteristics of $Zn_2SiO_4:Mn$ phosphors. The codoping with proper amounts of $Gd^{3+}/Li^+$ improved both the photoluminescence efficiency and decay time of $Zn_2SiO_4:Mn$ phosphor particles. In spray pyrolysis, the post-treatment temperature is another factor controlling the luminous performance of $Zn_2SiO_4:Mn$ phosphors. The $Zn_{1.9}SiO_4:Mn_{0.1}$ phosphor particles containing 0.1 mol% $Gd^{3+}/Li^+$ co-dopant had a 5% higher PL intensity than the commercial product and 5.7 ms decay time after post-treatment at $1,145^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.38-43
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• 2013

In this study we aims to examine the effects of $Co_3O_4$ and NiO doping on the defects and electrical properties in ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5) varistors. It seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects in Co and Ni co-doped ZBS system, however only ${V_o}^{\cdot}$ appeared in Co- or Ni-doped ZBS. Even though the same defects it was different in capacitance (1.5~4.5 nF) and resistance ($0.3{\sim}9.5k{\Omega}$). The varistor characteristics were improved with Co and Co+Ni doping (non-linear coefficient, ${\alpha}$= 36 and 29, relatively) in ZBS. The various parameters ($N_d=1.43{\sim}2.33{\times}10^{17}cm^{-3}$, $N_t=1.40{\sim}2.28{\times}10^{12}cm^{-2}$, ${\Phi}b$=1.76~2.37 V, W= 98~118 nm) calculated from the C-V characteristics in our systems did not depend greatly on the type of dopant, which were in the range of a typical ZnO varistors. It should be derived a improved C-V equation carefully for more reliable parameters because the variation of the varistor capacitance as a function of the applied dc voltage is depend on the defect, frequency, and temperature.

• Journal of the Korean Chemical Society
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• v.49 no.6
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• pp.560-566
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• 2005

Sintered ceramic samples of pure and some copper doped layered sodium lithium tri-titanate ($Na_{1.9}Li_{0.1}Ti_{3-X}Cu_XO_{7-X}$) materials with different dopant molar percentages (0.0$Cu^{2+}$ at $Ti^{4+}$ sites in the lattice is proposed in this paper. Furthermore, three distinct regions have been identified in log(${\sigma}_{d.c.}T$) versus 1000/T plots. The lowest temperature region is attributed to electronic hopping conduction(polaron) for all copper doped derivatives and ionic conduction for lithium substituted $Na_2Ti_3O_7$.The mechanism of conduction in the intermediate region is associated interlayer ionic conduction and in the highest temperature region is associated modified interlayer ionic conduction.