• 제목/요약/키워드: Donor-doped

검색결과 106건 처리시간 0.024초

2단계 스퍼터링으로 형성시킨 강유전 박막의 누설전류 개선 (Improvement of Leakage Current in Ferroelectric Thin Films Formed by 2-step Sputtering)

  • 마재평;신용인
    • 마이크로전자및패키징학회지
    • /
    • 제13권1호통권38호
    • /
    • pp.17-22
    • /
    • 2006
  • 2단계 스퍼터링으로 강유전 PZT 박막을 형성시켜 유전특성과 전도기구를 조사하였다. 또한 PZT 박막 내의 carrier를 보상해주기위해 도너 불순물을 도핑하였다. 2단계 스퍼터링으로 상온층 두에를 조절하여 누설전류를 $10^{-7}A/cm^2$ order까지 줄일 수 있었다. 전도기구가 bulk-limited의 하나임을 확인하였고 따라서 적정한 도너 불순물을 채택하였다. 도너 불순물을 도핑한 경우 2단계 스퍼터링한 PZT 박막의 누설전류 특성은 $10^{-8}A/cm^2$ order까지 개선되었다.

  • PDF

Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

  • Kim, Soaram;Park, Hyunggil;Nam, Giwoong;Yoon, Hyunsik;Kim, Jong Su;Kim, Jin Soo;Son, Jeong-Sik;Lee, Sang-Heon;Leem, Jae-Young
    • Bulletin of the Korean Chemical Society
    • /
    • 제34권11호
    • /
    • pp.3335-3339
    • /
    • 2013
  • Boron-doped ZnO (BZO) nanorods were grown on quartz substrates using hydrothermal synthesis, and the temperature-dependence of their photoluminescence (PL) was measured in order to investigate the origins of their PL properties. In the UV range, near-band-edge emission (NBE) was observed from 3.1 to 3.4 eV; this was attributed to various transitions including recombination of free excitons and their longitudinal optical (LO) phonon replicas, and donor-acceptor pair (DAP) recombination, depending on the local lattice configuration and the presence of defects. At a temperature of 12 K, the NBE produces seven peaks at 3.386, 3.368, 3.337, 3.296, 3.258, 3.184, and 3.106 eV. These peaks are, respectively, assigned to free excitons (FX), neutral-donor bound excitons ($D^{\circ}X$), and the first LO phonon replicas of $D^{\circ}X$, DAP, DAP-1LO, DAP-2LO, and DAP-3LO. The peak position of the FX and DAP were also fitted to Varshni's empirical formula for the variation in the band gap energy with temperature. The activation energy of FX was about ~70 meV, while that of DAP was about ~38 meV. We also discuss the low temperature PL near 2.251 eV, related to structural defects.

Control of electrical types in the P-doped ZnO thin film by Ar/$O_2$ gas flow ratio

  • Kim, Young-Yi;Han, Won-Suk;Kong, Bo-Hyun;Cho, Hyung-Koun;Kim, Jun-Ho;Lee, Ho-Seoung
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
    • /
    • pp.11-11
    • /
    • 2008
  • ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

  • PDF

원자층 증착법 기반 양이온-음이온 이중 도핑 효과에 따른 ZnO 박막의 전기적 특성 비교 연구 (An Investigation of Electrical Properties in Cation-anion Codoped ZnO by Atomic Layer Deposition)

  • 김동은;김건우;강경문;;박형호
    • 마이크로전자및패키징학회지
    • /
    • 제30권3호
    • /
    • pp.94-101
    • /
    • 2023
  • 투명 전도성 산화물(TCO)를 대체할 수 있는 대표적인 물질로 알려진 ZnO는 3.37 eV의 bandgap과 60 meV의 exciton binding energy를 가진 반도체 물질이다. 본 연구에서는 투명 전극으로 사용하기 위한 높은 전기적 특성을 확보하기 위해 원자층 증착법을 기반으로 양이온과 음이온의 단일 및 이중 도핑에 따라 성장한 ZnO 박막을 제작하였다. 3가 양이온 Al, Ga과 음이온 F이 단일 및 이중 도핑된 ZnO 박막의 구조적, 광학적 특성 및 전기적 특성을 확인하였다. 단일 도핑의 경우, ZnO에 donor로 작용하는 Al, Ga, F에 의해 캐리어 농도가 도핑 전에 비해 증가하였고 근자외선 영역에서의 band-edge absorption이 증가하는 것을 확인하였다. 단일 도핑 중에서는 F이 ZnO 내 산소 공공 자리에 passivation 되면서 높은 mobility와 함께 가장 높은 전도도를 보였다. 이중 도핑의 경우, 각 원소들의 도핑 효과가 더해지면서 단일 도핑에 비해 높은 전기적 특성을 보였다. 결과적으로 Ga-F에 비해 Al-F 도핑 시 ionic radius 차이에 의한 lattice distortion 감소 및 delocalized 된 전자 상태의 증가로 가장 낮은 비저항 값을 보였으며 PDOS 분석을 통한 시뮬레이션 데이터로 측정 값과 일치하는 결과를 확인했다.

Fabrication of Photoluminescent Dye Embedded PMMA Nanofiber and its Fluorescence Resonance Energy Transfer

  • Lee, Kyung-Jin;Oh, Joon-Hak;Kim, Young-Geun;Jang, Jyong-Sik
    • 한국고분자학회:학술대회논문집
    • /
    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
    • /
    • pp.314-314
    • /
    • 2006
  • The FRET property has been extensively studied from the theoretical view points to the practical applications. In case that the donor and acceptor are confined in nanodimension, the FRET effectively occurs, because of their distant dependent characteristic. However, there are no reports concerning FRET with one dimensional (1D) nanomaterial. We have successfully prepared the PMMA nanotubes using vapor deposition polymerization as the platform of FRET. The dye-PMMA composite nanofiber has also been produced without phase separation and any deterioration of properties of the dyes. The PMMA 1D nanocomposite doped two dyes with great spectral overlap between donor and acceptor displayed FRET property.

  • PDF

$Tb^{3+}$ 첨가된 $YAlO_3$에서 Cross-Relaxation의한 발광 색변화 (Variation of Emission Colors through Cross-Relaxation In $Tb^{3+}$ Doped $YAlO_3$)

  • 김광철
    • 반도체디스플레이기술학회지
    • /
    • 제11권1호
    • /
    • pp.35-39
    • /
    • 2012
  • $YAlO_3:Tb{_x}^{3+}$ has been synthesized by a combustion process and the concentration x of Tb was varied from 0.001 and 0.05 mol% per mole of $YAlO_3$. The emission optical properties on the $YAlO_3:Tb{_x}^{3+}$ have been investigated by time-resolved photoluminescence spectra and decay curves of center wavelength. The emission color changes from blue to green with increasing the $Tb^{3+}$ concentration from x= 0.001 to 0.05 mole fraction in $YAlO_3$ host. This emission color change can be explained in terms of cross-relaxation processes. Decay curves of emission intensity indicate that the type of energy transfer is donor-acceptor transition.

Effects of $Y_2O_3$ Addition on the Microstructure and Electrical Property of $TiO_2$-excess $BaTiO_3$

  • Kim, Jong-Han;Han, Young-Ho
    • 한국분말야금학회:학술대회논문집
    • /
    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
    • /
    • pp.1095-1096
    • /
    • 2006
  • When $Y_2O_3$ was added to Ti-excess $BaTiO_3$ ((Ba+Y)/Ti =1), the area occupied by $Y^{3+}$ ion was confirmed by its microstructure development, electrical conductivity behavior and lattice constant. Grain growth inhibition was observed when the content of donor dopant exceeded a critical value ($x{\approx}.0.01$) in $BaTiO_3+x(0.5Y_2O_3+TiO_2)$ system. A donor-doped behavior was observed at various Y contents ($0.2\sim3.0$ mol% Y) when $Y_2O_3$ was added to $TiO_2$-excess $BaTiO_3$. As Y content was increased, (002) and (200) peaks shifted to higher angles and the lattice constant (a and c axis) decreased gradually.

  • PDF

각 층에 따른 염료감응형 태양전지의 특성 개선 - II (-특성증진 및 측정기를 중심으로) (An Improvement of the Characteristics of DSSC by Each Layers - II (- Property Improvement and Measuring System))

  • 마재평;박치선
    • 반도체디스플레이기술학회지
    • /
    • 제10권2호
    • /
    • pp.65-71
    • /
    • 2011
  • Properties of each layer in DSSC were investigated to improve solar cell characterstics. Also in this study, low costsolar simulator system is fabricated and used. Efficiency of DSSC is better in the case of thinner semiconductive layer, because thick semiconductive layer is acted as resistor. Sc-doped ZnO thin films showed better electrical property by proper donor doping effect. Among the dyes, DSSC containing N719 showed higher efficiency, because N719 have smaller electron affinity and shallow band gap.

The Mg Solid Solution far the P-type Activation of GaN Thin Films Grown by Metal-Organic Chemical Vapor Deposition

  • Kim, KeungJoo;Chung, SangJo
    • Transactions on Electrical and Electronic Materials
    • /
    • 제2권4호
    • /
    • pp.24-29
    • /
    • 2001
  • GaN films were grown for various Mg doping concentrations in metal-organic chemical vapor deposition. Below the Mg concentration of 10$^{19}$ ㎤, the thermally annealed sample shows the compensated phase to n-type GaN in Hall measurement. In the MB concentration of 4$\times$10$^{19}$ ㎤ corresponding to the hole carrier concentration of 2.6$\times$1$^{19}$ ㎤ there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the $V_{Ga}$ and for an acceptor of $Mg_{Ga}$ . The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photocurrent signal of 3.02-3.31 eV. Above the Mg concentration of 4$\times$10$^{19}$ ㎤, both the Mg doping level and Mg concentration were saturated and there Is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band.

  • PDF

Effect of Abnormal Grain Growth and Heat Treatment on Electrical Properties of Semiconducting BaTiO3Ceramics

  • Lee, Joon-Hyung;Cho, Sang-Hee
    • 한국세라믹학회지
    • /
    • 제39권1호
    • /
    • pp.21-25
    • /
    • 2002
  • Effect of abnormal grain growth and heat treatment time on the electrical properties of donor-doped semiconductive BaTiO$_3$ceramics was examined. La-doped BaTiO$_3$ceramics was sintered at 134$0^{\circ}C$ for different times from 10 to 600 min in order to change the volume fraction of the abnormal grains in samples. As a result, samples with different volume fraction of abnormal grain growth from 22 to 100% were prepared. The samples were annealed at 120$0^{\circ}C$ for various times. The resistivity of the sam-ples at room and above Curie temperature was examined. The complex impedance measurement as functions of the volume fraction of abnormal grains and annealing time was conducted. Separation of complex impedance semicircle was observed in a sample in which abnormal and fine grains coexist. The results are discussed from a viewpoint of microstructure-property relationship.