• Title/Summary/Keyword: Doherty Amplifier

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Output Power Back-Off (OPBO) Based Asymmetric Doherty Power Amplifier (출력 전력 백-오프 기반 비대칭 도허티 전력 증폭기)

  • Chun, Sang-Hyun;Jang, Dong-Hee;Kim, Ji-Yeon;Kim, Jong-Heon
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.9 no.2
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    • pp.51-59
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    • 2010
  • In this paper, we propose an inverted type asymmetric Doherty amplifier with optimized efficiency characteristic in wanted output power back-off (OPBO) range according to peak to average power ratio of input signal In order to obtain optimized efficiency of the asymmetric Doherty amplifier in wanted OPBO, peak power ratio between main amplifier and peaking amplifier was determined and then impedance of 90 degrees impedance transformer was obtained by peak power ratio. The offset line length and peak dividing ratio of the asymmetric Doherty amplifier were also calculated. From the measurement results, the proposed amplifier has achieved 40 % drain efficiency and -35 dBc adjacent channel leakage ratio at the average output power of 48.7 dBm for CDMA 2000 1x 3-FA test signal.

Design, Linear and Efficient Analysis of Doherty Power Amplifier for IMT-2000 Base Station (IMT-2000 기지국용 도허티 전력증폭기의 설계 및 선형성과 효율 분석)

  • Kim Seon-Keun;Kim Ki-Moon
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.9 no.2
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    • pp.262-267
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    • 2005
  • During several method of improvement efficient, We analyzed Doherty Amplifier That used by simple circuit and 180w PEP LDMOS to analyze improvement of efficient and linearity. We for testing performance of Doherty Amplifier compared with Balanced Class AB, the experimental results show when Peaking Amp $V_gs.P$=1.53V, the efficiency is increased at Maximum 11.6$\%$. After finding optimum bias point of linearity improvement by manual tuning gate bias, when WCDMA 4FA $V_gs.P$=3.68V IMSR could be increased maximum 3.34dB. especially, when we match bias point of Peaking amp at 1.53V, we could get a excellent efficiency increase and have fUR under -3203c at output power 43dBm.

A 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT (내부정합된 GaN-HEMT를 이용한 2.65 GHz Doherty 전력증폭기)

  • Kang, Hyunuk;Lee, Hwiseob;Lim, Wonseob;Kim, Minseok;Lee, Hyoungjun;Yoon, Jeongsang;Lee, Dongwoo;Yang, Youngoo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.3
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    • pp.269-276
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    • 2016
  • This paper presents a 2.65 GHz Doherty power amplifier with internally-matched GaN HEMT. Internal matching circuits were adopted to match its harmonic impedances inside the package. Simultaneously, due to the partially matched fundamental impedance, input and output matching networks become simpler. Bond wires and parasitic elements of transistor package were predicted by EM simulation. For the LTE signal with 6.5 dB PAPR, the implemented Doherty power amplifier shows a power gain of 13.0 dB, a saturated output power of 55.4 dBm, an efficiency of 49.1 %, and ACLR of -26.3 dBc at 2.65 GHz with an operating voltage of 48 V.

A Study on Improving Efficiency of Power Amplifier using Doherty Theory for Wireless Network and Repeater (도허티 이론을 이용한 무선 네트워크 및 중계기용 전력증폭기의 효율 향상에 관한 연구)

  • Jeon Joong Sung;Choi Dong Muk
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.9 no.2
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    • pp.422-427
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    • 2005
  • In this paper, Doherty amplifier is designed by the need of improving the linearity and efficiency of wireless network and repeater for WCDMA. It is designed to maintain the high linearity and efficiency at the low efficiency period of the power amplifier after analyzing Doherty technique using the active load-pull in condition of the high efficiency power amplifier implementation according to the variation of input power. CW 1-tone experimental results at the WCDMA frequency 2.11$\~$2.17 CHz shows that Doherty amplifier, which achieves pore. add efficiency(PAE) 50$\%$ at 6dB back off the point from maximum output power 52.3dBm, obtains higher efficiency of 13.3$\%$ than class AB. finding optimum bias point after adjusted gate voltage, Doherty amplifier shows that IMD3 improves 4dB.

Design of Doherty Amplifier With Push-Pull Structure Using BALUN Transform (발룬을 이용한 푸쉬풀 구조의 도허티 증폭기 설계)

  • 정형태;김성욱;장익수
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.4
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    • pp.51-58
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    • 2004
  • Push-pull structure with balun transformer is presented for load modulation technique which improves the overall efficiency of power amplifier Under the assumption that output impedance of fumed-off amplifier is high, conventional Doherty amplifier is composed of impedance inverter and peaking amplifier, of which operation is controlled by the input power level. In many case, however, impedance of 'off'amplifier is very low due to matching network or parasitic output capacitance. This paper introduces novel load modulation technique which uses low output impedance of 'off'amplifier. Experimental results show that good linearity and efficient!'enhancement of the proposed push-pull structure

Highly Linear and Efficient Microwave GaN HEMT Doherty Amplifier for WCDMA

  • Lee, Yong-Sub;Lee, Mun-Woo;Jeong, Yoon-Ha
    • ETRI Journal
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    • v.30 no.1
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    • pp.158-160
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    • 2008
  • A highly linear and efficient GaN HEMT Doherty amplifier for wideband code division multiple access (WCDMA) repeaters is presented. For better performance, the adaptive gate bias control of the peaking amplifier using the power tracking circuit and the shunt capacitors is employed. The measured one-carrier WCDMA results show an adjacent channel leakage ratio of -43.2 dBc at ${\pm}2.5$-MHz offset with a power added efficiency of 40.1% at an average output power of 37 dBm, which is a 7.5 dB back-off power from the saturated output power.

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Doherty Amplifier Design Using a Compact Slow-Wave Microstrip Branch-Line coupler for Linearity Improvement (Compact Slow-Wave Microstrip Branch-Line Coupler를 이용한 도허티 증폭기의 선형성 개선)

  • Kim, Tae-Hyung;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.9
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    • pp.55-59
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    • 2008
  • In this paper, the linearity of Doherty amplifier has been improved by applying a compact slow-wave microstrip branch-line coupler on the output of Doherty amplifier. The proposed branch coupler has four microstrip high-low impedance resonant cells periodically placed inside the branch-line coupler to result in high slow-wave effect. The new coupler not only effectively reduces the occupied area to 30% of the conventional branch-line coupler at 1.8GHz, but also has high second harmonic suppression performance. We obtained the 3rd-order intermodulation distortion ($IMD_3$) of -31.16 dBc for CDMA applications with that of maintaining the constant power added efficiency (PAE). The IMD3 performance is improved as much as -7 dBc compared with a Doherty amplifier.

Doherty Amplifier Using Load Modulation and Phase Compensation DGS Micro-Strip Line (부하 변조 및 위상 보상 DGS 마이크로스트립 선로를 이용한 도허티 증폭기)

  • Choi Heung-Jae;Lim Jong-Sik;Jeong Yong-Chae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.8 s.99
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    • pp.815-824
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    • 2005
  • In this paper, we proposed a new DGS(Defected Ground Structure) Doherty amplifier for IMT-2000 band. Originally, active load-pull analysis of a Doherty amplifier assumes ideal harmonic termination condition. However, there have been no papers considering this ideal harmonic termination condition. We obtained excellent improvements of efficiency, gain, maximum output power as well as superior size reduction of a Doherly amplifier by satisfying the overlooked assumption of ideal harmonic termination through the adaptation of DGS at the output transmission line of carrier and peaking amplifier that is essential for Doherty operation. The amount of both the 2nd and the 3rd harmonic rejection of the proposed DGS Doherty amplifier over the conventional one are 44.92 dB and over 23.77 dB, respectively. The acquired improvement in Pl dB, gain, drain efficiency, and ACPR to WCDMA 1FA signal were 0.42 dB, 0.33 dB, $6.4\%$ and 5.4 dBc, respectively. Moreover, electrical length of $90{\circ}$ is reduced at each of the DGS carrier amplifier path and DGS peaking amplifier path, therefore the whole amplifier circuit size is considerably reduced.

Design of a Doherty Power Amplifier Using the Spiral PBG Structure for Linearity Improvement (나선형 구조의 PBG를 적용한 도허티 전력증폭기의 선형성 개선)

  • Kim, Sun-Young;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.1
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    • pp.115-119
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    • 2008
  • In this paper, the linearity of Doherty power amplifier has been improved by applying a new Photonic Bandgap(PBG) structure on the output of amplifier. The reposed spiral PBG structure is a two-dimensional(2-D) periodic lattice patterned on a dielectric slab that does not require nonplanar fabrication process. This structure has more broad stopband and high suppression performance than the conventional three cell PBG. Also, It has a sharp skirt property. We obtained the 3rd-order intermodulation distortion(IMD3) of -33dBc for CDMA applications with that of maintaining the constant power added efficiency(PAE), the IMD3 performance is improved as much as -8 dB compared with a Doherty power amplifier without PBG structure. Moreover, the physical length of PBG is shortened, therefore the whole amplifier circuit size is considerably reduced.

Research on PAE and Linearity of Power Amplifier Using EER and PBG Structure (EER 및 PBG를 이용한 전력 증폭기의 효율 및 선형성 개선에 관한 연구)

  • Lee, Chong-Min;Seo, Chul-Hun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.6 s.121
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    • pp.584-590
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    • 2007
  • In this paper, the efficiency of power amplifier has been maximized by the application of EER structure, and the linearity has been improved by using PBG structure. This paper has proposed a design of power amplifier in class-F to get the PAE, and to control dynamic power using envelope detector. PBG structure gets high-linearity by removing harmonics arisen from the mismatching of matching circuit. The PAE and the 3rd order IMD have been improved 34.64%, 6.65 dB compared with those of conventional Doherty amplifier, respectively.