• 통합자연과학논문집
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• 제4권1호
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• pp.11-14
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• 2011

Free-standing multilayer distributed Bragg reflectors (DBR) porous silicon dielectric mirrors, prepared by electrochemical etching of crystalline silicon using square wave currents are treated with polymethylmethacrylate (PMMA) to produce flexible, stable composite materials in which the porous silicon matrix is covered with caffeine-impregnated PMMA. Optically encoded free-standing DBR PSi dielectric mirrors retain the optical reflectivity. Optical characteristics of free-standing DBR PSi dielectric mirrors are stable and robust for 24 hrs in a pH 12 aqueous buffer solution. The appearance of caffeine and change of DBR peak were simultaneously measured by UV-vis spectrometer and Ocean optics 2000 spectrometer, respectively.

• 통합자연과학논문집
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• 제2권2호
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• pp.82-85
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• 2009

Distributed Bragg reflector (DBR) porous silicon (PSi) was generated by an electrochemical etching a bragg structure into a silicon wafer through electrode current in aqueous ethanolic HF solution. DBR PSi exhibiting unique reflectivity was successfully obtained by an electrochemical etching of silicon wafer using square current waveform. The multilayered photonic crystals of DBR PSi exhibited the reflection of a specific wavelength with high reflectivity in the optical reflectivity spectrum. In this work, we have developed a method to create refractive index in Si substrate through intensity of an electric current. The electrochemical process allows for precise control of the structural properties of DBR PSi such as thickness of the porous layer, porosity, and average pore diameter. The number of reflection peak of DBR PSi and its pore size increased as the intensity of electric current increased. This might be a demonstration for the fabrication of specific reflectors or filters.

• 전자공학회논문지A
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• 제30A권9호
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• pp.24-29
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• 1993

The 607 nm GaInP/AlInP distributed bragg reflector (DBR) lasers using the second order gratings period of 184.7 nm were fabricated by gas source molecular beam epitaxy (GSMBE) and the conventional holographic method. GaInP/AlInP DBR lasers show single mode operations up to 1.8 times the threshold currents with a wavelength of 607 nm at 140 K and a wavelength shift of 0.033 nm/K is observed. No mode hopping was found in the temperature ranging from 120 to 165K.

• 대한전자공학회논문지SD
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• 제37권7호
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• pp.17-28
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• 2000

DFB(Distributed Feedback) 및 DBR(Distributed Bragg Reflector) 레이저 다이오드의 모델링에 많이 사용되는 시간 변수가 있는 결합 파동 방정식의 수치해를 효율적으로 구할 수 있는 새로운 방법을 제안 하였다. 이 방법에서는 결합 파동 방정식을 두 세트의 방정식으로 분리하여 해석한다. 한 세트의 방정식들에는 위상 인자 및 이득 인자만 포함되고, 다른 한 세트의 방정식에는 결합항만이 포함된다. 본 논문에서 SS-TDM(Split-Step Time Domain Model)이라고 명명한 새로운 수치해석법은 기존의 방법에 비하여 매시간 스텝당 계산 시간은 비슷한 반면에 분할 구간의 수가 10배 이상 적게 하여도 정확한 결과를 얻을 수 있음을 확인하였다.

• 대한전자공학회논문지SD
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• 제40권9호
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• pp.666-672
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• 2003

본 논문에서는 광의 결합 메커니즘이 다른 ITG(integrated-twin-guide) 와 BT(butt coupled) 구조를 가지는 두 종류의 파장 가변 DBR-LD의 제작공정과 성능에 대해서 기술하였다. 두 종류의 DBR-LD는 PBH(planar buried heterostructure) 구조론 가지며, MOVPE 성장으로 제작하였다. 제작된 DBR-LD 광출력 특성을 측정한 결과 BT-DBR-LD가 ITG-DBR-LD보다 임계전류 변화폭, 광출력 변화 폭, 기울기 효율에서 2배 이상의 우수한 특성을 나타내었다. 그리고, 준 연속 파장 가변 특성은 BT-DBR-LD가 7.2nm, ITG-DBR-LD가 7.4nm 이며, SMSR이 35dB 이상으로 우수하게 나타났다. 이와 같이 BT DBR-LD가 특성이 우수한 것은 BT 구조가 ITG 구조보다 높은 결합 효율을 나타내기 때문이다.

• 한국정보통신학회논문지
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• 제23권3호
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• pp.311-317
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• 2019

먼저 광학 신호를 이용한 다양한 응용 분야에서의 핵심 요소인 광학 빔 조향 성능 향상을 위하여 실리콘 기반 격자 구조의 특성을 해석하였다. 이를 기반으로 높은 방사 효율과 좁은 빔 폭을 얻기 위해서 기존의 격자 구조 방사기에 분배 브래그 반사기(Distributed Bragg Reflector, DBR)를 집적한 구조를 제안한다. 분배 브래그 반사기의 위치에 따른 방사 효율과 방사 각도의 전치 반폭을 분석하고 이를 토대로 최적화 구조를 제안한다. 제안한 격자 구조는 상보형 금속산화 반도체(complementary metal-oxide semiconductor, CMOS) 공정과 호환 가능하며, 최대 방사 효율 87.1% 및 최소 방사 각도의 반치 전폭 $4.68^{\circ}$를 가진다.

• 한국광학회:학술대회논문집
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• 한국광학회 2008년도 하계학술발표회 논문집
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• pp.247-248
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• 2008

We investigated the influence of uniparabolic graded distributed Bragg reflector (DBR) using digital alloy on vertical series resistance and reflectivity of DBRs. Measured specific DBR series resistance was reduced to about 8.787${\times}$$10^{-6}$${\ohm}$ $cm^2$/period for digital alloy uniparabolic graded DBR. This was better than various graded DBRs, especially biparabolic graded DBR. Reflectivity of 42 pair uniparabolic graded DBR was found to be comparable to that of biparabolic graded DBRs.

• 센서학회지
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• 제30권4호
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• pp.250-254
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• 2021

A highly sensitive and selective non-dispersive infrared (NDIR) carbon dioxide gas sensor requires achieving high transmittance and narrow full width at half maximum (FWHM), which depends on the interface of the optical filter for precise measurement of carbon dioxide concentration. This paper presents the design, simulation, and fabrication of a Fabry-Perot filter based on a distributed Bragg reflector (DBR) for a low-cost NDIR carbon dioxide sensor. The Fabry-Perot filter consists of upper and lower DBR pairs, which comprise multilayered stacks of alternating high- and low-index thin films, and a cavity layer for the resonance of incident light. As the number of DBR pairs inside the reflector increases, the FWHM of the transmitted light becomes narrower, but the transmittance of light decreases substantially. Therefore, it is essential to analyze the relationship between the FWHM and transmittance according to the number of DBR pairs. The DBR is made of silicon and silicon dioxide by RF magnetron sputtering on a glass wafer. After the optimal conditions based on simulation results were realized, the DBR exhibited a light transmittance of 38.5% at 4.26 ㎛ and an FWHM of 158 nm. The improved results substantiate the advantages of the low-cost and minimized process compared to expensive commercial filters.

• 통합자연과학논문집
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• 제3권4호
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• pp.237-240
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• 2010

Recently, number of studies for porous silicon have been investigated by many researchers. Multistructured porous silicon (PSi), distributed Bragg reflector (DBR) PSi, has been a topic of interest, because of its unique optical properties. DBR PSi were prepared by an electrochemical etch of $P^{{+}{+}}$-type silicon wafer of resistivity between 0.1 $m{\Omega}cm$ with square wave current density, resulting two different refractive indices. In this work, We have fabricated a simple and portable organic vapor-sensing device based on DBR porous silicon and investigated the optical characteristics of DBR porous silicon. DBR porous silicon have been characterized by FT-IR, Ocean optics 2000 spectrometer. The device used DBR PSi chip has been demonstrated as an excellent gas sensor, showing a great senstivity to a toxic vapor (TEP, DMMP, DEEP) at room temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1440-1442
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• 2007

In this work, we have modeled and fabricated microcavity-enhanced OLED using the 1-dimensional distributed Bragg reflector model (DBR). Results show that simulated spectrum intensity of microcavity OLED increased more than 30% compared to the conventional OLED, by use of DBR with $TiO_2$ and $SiO_2$. Spectral change of green and blue emission was expected to give the deeper color. The experimental design and characterization as well as the matching with simulated properties were performed for microcavity OLED for actual application.