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http://dx.doi.org/10.13160/ricns.2010.3.4.237

Fabrication and Characterization of DBR Porous Silicon Chip for the Detection of Chemical Nerve Agents  

Jung, Kyoungsun
Publication Information
Journal of Integrative Natural Science / v.3, no.4, 2010 , pp. 237-240 More about this Journal
Abstract
Recently, number of studies for porous silicon have been investigated by many researchers. Multistructured porous silicon (PSi), distributed Bragg reflector (DBR) PSi, has been a topic of interest, because of its unique optical properties. DBR PSi were prepared by an electrochemical etch of $P^{{+}{+}}$-type silicon wafer of resistivity between 0.1 $m{\Omega}cm$ with square wave current density, resulting two different refractive indices. In this work, We have fabricated a simple and portable organic vapor-sensing device based on DBR porous silicon and investigated the optical characteristics of DBR porous silicon. DBR porous silicon have been characterized by FT-IR, Ocean optics 2000 spectrometer. The device used DBR PSi chip has been demonstrated as an excellent gas sensor, showing a great senstivity to a toxic vapor (TEP, DMMP, DEEP) at room temperature.
Keywords
Bragg; Sensor; TEP; DMMP; DEEP;
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