• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.617-621
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• 2009

Zinc oxide (ZnO) nanorods were grown on the pre-oxidized silicon substrate with the assistance of Au and the fluorine-doped tin oxide (FTO) based on the catalysts by vapor-liquid-solid (VLS) synthesis. Two types of ZnO powder particle size, 20nm, $20{\mu}m$, were used as a source material, respectively The properties of the nanorods such as morphological characteristics, chemical composition and crystalline properties were examined by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and field-emission scanning electron microscope (FE-SEM). The particle size of ZnO source strongly affected the growth of ZnO nanostructures as well as the crystallographic structure. All the ZnO nanostructures are hexagonal and single crystal in nature. It is found that $1030^{\circ}C$ is a suitable optimum growth temperature and 20 nm is a optimum ZnO powder particle size. Nanorods were fabricated on the FTO deposition with large electronegativity and we found that the electric potential of nanorods rises as the ratio of current rises, there is direct relationship with the catalysts, Therefore, it was considered that Sn can be the alternative material of Au in the formation of ZnO nanostructures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.53-53
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• 2007

반도체 소자의 고집적화, 미세화 화로 인해 반도체의 동작속도를 증가시키기 위하여 Cu를 이용한 금속배선이 주목받게 되었으나, 높은 압력으로 인한 보은 Cu 영역에서 과잉 디슁 현상과 에로젼을 유도하고 반도체 웨이퍼위의 low-k 물질에 손상을 줌에 따라 메탈라인 브리징과 단락을 초래할 있어, Cu의 단락인 islands를 남김으로서 표면 결항을 제거하지 못한다는 단점을 가지고 있었다. 그래서 이러한 문제점을 해결하기 위하여 기존의 CMP에 전기화학을 결합시킴으로서 낮은 하력에서의 Cu평탄화를 달성할 수 있는 ECMP (electrochemical mechanical polishing)기술이 필요하게 되었다. 따라서 본 논문에서는 전기화학적 기계적 연마(ECMP)작용을 위해, I-V 특성 곡선을 이용하여 패시베이션 막의 active, passive, transient, trans-passive영역의 전기화학적 특성을 비교 분석하였으며, Cu막의 표면 형상을 알아보기 위해 scanning electron microscopy (SEM) 측정과 energy dispersive spectroscopy (EDS)와 X-ray Diffraction (XRD) 분석을 통해 금속 화학적 조성을 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.137-137
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• 2009

Indium Gallium Zinc Oxide (IGZO) thin films for TFT channel were prepared by using a Facing Target Sputtering (FTS) system. To investigate the effect of oxygen on the optical and the electrical properties of amorphous InGaZnO(a-IGZO), we prepared thin films by FTS system in various oxygen atmospheres at room temperature. As-deposited IZTO thin films were investigated by using a UV/VIS spectrometer, an X-ray diffractometer, a Hall Effect measurement system, and an atomic force microscope. The quantitative analysis of the films was carried out by using the energy dispersive X-ray (EDX) technique for the as-deposited film.

• Bulletin of the Korean Chemical Society
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• v.23 no.11
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• pp.1531-1540
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• 2002

With the invention of the inlaying technique for celadon in the latter half of the 12th century, the Koryo potters reached a new height of artistic and scientific achievement in ceramics chemical technology. Inlaid celadon shards, collected in 1991 during the surface investigation of Kangjin kilns found on the southwestern shore of South Korea, were imbedded in epoxy resin and polished for cross-section examination. Backscattered electron images were taken with an electron microprobe equipped with an energy dispersive spectrometer. The spectrometer was also used to determine the composition of micro-areas. Porcelain stone, weathered rock of quartz, mica, and feldspar composition were found to be the raw material for the body and important components in the glaze and white inlay. The close similarity between glaze and black inlay in the microstructure suggests that the glaze material was modified by adding clay with high iron content, such as biotite, for use as black inlay. The deep soft translucent quality of celadon glaze is brought about by its microstructure of bubbles, remnant and devitrified minerals, and the schlieren effect.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.76-79
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• 2011

In order to improve efficiency and make a new material thin film, we prepared the Al-In-Sn-ZnO thin film on a glass substrate at room temperature using a Facing Target Sputtering (FTS) system. The FTS system was designed to array two targets that face each other. Two different kinds of targets were installed on the FTS system. We used an ITO ($In_2O_3$ 90wt%, $SnO_2$ 10wt%) target and an AZO (ZnO 98wt%, $Al_2O_3$ 2wt%) target. The AIZTO films were deposited using different applied powers to the targets. The as-deposited AIZTO thin films were investigated using a UV/VIS spectrometer, an X-ray diffratometer (XRD), and Energy Dispersive X-ray spectroscopy (EDX).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.110-113
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• 2012

ZnO crystals with a baseball bat shape were synthesized without any catalysts through a simple thermal oxidation of ZnS powder in alumina crucible under air atmosphere. SEM images demonstrated that the bat structure was composed of two pieces of ZnO crystals, i.e hexagonal-shaped rod and inverted cone-shaped rod. X-ray diffraction (XRD) pattern revealed that the ZnO crystals had wurtzite hexagonal structure. Energy dispersive X-ray (EDX) spectrum showed that the ZnO was of high purity. A strong green emission peak at 510 nm was observed in cathodoluminescece spectrum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.98-101
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• 2018

In this paper, we discuss the fabrication of metal alloy resistors. We connected them in parallel to estimate their resistance and temperature coefficient of resistance (TCR). The fabricated resistors have different resistances, 5 and $10{\Omega}$ and different TCRs, 50 and $200ppm/^{\circ}C$. Each resistor was confirmed to have the correct atomic composition through the use of energy dispersive X-ray (EDX). The resistors' electrical properties were confirmed by measuring resistance and TCR. The resistance and TCR of the resistors connected in parallel were estimated through the increase in resistance due to the increase in temperature, and were compared with the measured values. We are confident that this TCR estimation technique, which uses the increase in resistance due to temperature, will be very useful in designing and fabricating resistors with low and stable TCR.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.495-498
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• 2009

To improve the efficiency of the high voltage cable for BLU(backlight unit) of TFT-LCD(Thin Film Transistor-Liquid Crystal Display), the analysis for the trial products(UL3239, UL3633) is conducted by using SEM(scanning electron microscope) and EDX(Energy Dispersive X-ray Spectroscopy). The result that it is possible to accumulate the know-how to about stranding pitch through effective improvement of stranding process. The troubles which are the badness of withstanding voltage and tensile strength etc. are solved by development of excellent material. Furthermore, phenomenon of conductor unfasten in the harness work is solved by improvement of the stranding wire process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.931-934
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• 2001

GaN nanowires has much interest as one-dimensional materials for blue light LED. GaN-based materials have been the subject of intensive research for blue light emission and high temperature/high power electronic devices. In this letter, the synthesis of GaN nanowires by the reaction of mixture of GaN nanowires by the reaction of mixture of Ga meta and GaN powder with NH$_3$ using thermal chemical vapor deposition is reported. X-ray diffraction, energy dispersive x-ray spectrometer, scanning electron microscopy, and transmission electron microscopy indicate that those GaN nanowires with hexagonal wurtzite structure were about 60nm in diameter and up to several hundreds of micrometers in length.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.89-93
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• 1995

Effects of hydrogenation in amorphous silicon rile growths on Solid Phase Crystallization (SPC) was investigated using x-ray diffractometry, energy dispersive Spectroscopy, and Raman spectrum. Interdiffusion of barium(Ba) and aluminum(Al) compounds of corning substrate was observed in both of rf sputtering and LFCVD films under the low temperature(580$^{\circ}C$) annealing. Low degree of crystallinity resulted from the interdiffusion was obtained. Highly applicable degree of crystallinity was obtained through the mechanical damage induced surface activation on amorphous silicon films. X-ray diffraction intensity of (111) orientation was used to characterize the degree of crystallinity of SPC. Nucleation and growth rate in SPC could be controllable through the employed surface treatment. IIydrogenated LPCVD films showed the superior crystallinity to non-hydrogenated sputtering films. Insignificant effects of activation treatment in sputtered film was of activation treatment in sputtered film was observed on SPC.