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http://dx.doi.org/10.4313/TEEM.2011.12.2.76

Characteristic of Al-In-Sn-ZnO Thin Film Prepared by FTS System with Hetero Targets  

Hong, Jeong-Soo (Department of Electrical Engineering, Kyungwon University)
Kim, Kyung-Hwan (Department of Electrical Engineering, Kyungwon University)
Publication Information
Transactions on Electrical and Electronic Materials / v.12, no.2, 2011 , pp. 76-79 More about this Journal
Abstract
In order to improve efficiency and make a new material thin film, we prepared the Al-In-Sn-ZnO thin film on a glass substrate at room temperature using a Facing Target Sputtering (FTS) system. The FTS system was designed to array two targets that face each other. Two different kinds of targets were installed on the FTS system. We used an ITO ($In_2O_3$ 90wt%, $SnO_2$ 10wt%) target and an AZO (ZnO 98wt%, $Al_2O_3$ 2wt%) target. The AIZTO films were deposited using different applied powers to the targets. The as-deposited AIZTO thin films were investigated using a UV/VIS spectrometer, an X-ray diffratometer (XRD), and Energy Dispersive X-ray spectroscopy (EDX).
Keywords
AZO; ITO; FTS;
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Times Cited By KSCI : 2  (Citation Analysis)
Times Cited By SCOPUS : 3
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