Conduction Properties of NitAI Ohmic Contacts to AI-implanted p-type 4H-SiC (AI 이온 주입된 p-type 4H-SiC에 형성된 Ni/AI 오믹접촉의 전기 전도 특성)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.22 no.9
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- pp.717-723
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- 2009