• Korean Journal of Materials Research
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• v.30 no.2
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• pp.57-60
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• 2020

Titanium aluminides have attracted special interest as light-weight/high-temperature materials for structural applications. The major problem limiting practical use of these compounds is their poor ductility and formability. The powder metallurgy processing route has been an attractive alternative for such materials. A mixture of Ti and Al elemental powders was fabricated to a mechanical alloying process. The processed powder was hot pressed in a vacuum, and a fully densified compact with ultra-fine grain structure consisting of Ti₃Al intermetallic compound was obtained. During the compressive deformation of the compact at 1173 K, typical dynamic recrystallization (DR), which introduces a certain extent of grain refinement, was observed. The compact had high density and consisted of an ultra-fine equiaxial grain structure. Average grain diameter was 1.5 ㎛. Typical TEM micrographs depicting the internal structure of the specimen deformed to 0.09 true strain are provided, in which it can be seen that many small recrystallized grains having no apparent dislocation structure are generated at grain boundaries where well-developed dislocations with high density are observed in the neighboring grains. The compact showed a large m-value such as 0.44 at 1173 K. Moreover, the grain structure remained equiaxed during deformation at this temperature. Therefore, the compressive deformation of the compact was presumed to progress by superplastic flow, primarily controlled by DR.

• 연구논문집
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• s.33
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• pp.137-145
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• 2003

The effects of antimony addition on the microstructures and creep behavior of AZ31 magnesium alloy have been investigated. Constant load creep tests were carried out at temperatures ranging from $150^{\circ}C$ to $200^{\circ}C$, and an initial stress of 50MPa for AZ31 alloys containing antimony up to 0.84% by weight. Results show that small additions of antimony to AZ31 effectively decreased the creep extension and steady state creep rates. The steady state creep rate of AZ31 was reduced 2.5 times by the addition of 0.84% of antimony. The steady state creep rate of AZ31-0.84Sb alloy was controlled by dislocation climb in which the activation energy for creep was 128 kJ/mole. The microstructure of as-cast AZ31-0.84%Sb alloy showed the presence of $Mg_3Sb_2$ precipitates dispersed throughout the matrix. The main reason for the higher creep resistance in AZ31-Sb alloys is due to the presence $Mg_3Sb_2$, which effectively hindered the movement of dislocations during the elevated temperature creep.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• Journal of the Mineralogical Society of Korea
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• v.13 no.4
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• pp.196-204
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• 2000

We present characteristics of hydrothermal chlorite and its interstratification with 7-$\AA$ mineral phase that occur in the propylitic alteration zone of the Bobae sericite deposit formed in rhyodacitic tuff. Chlorite is found as disseminated fine-grained aggregate or replacement materials of precursor minerals such as Fe-oxides and amphibole. Based on X-ray diffraction(XRD), all chlorites belong to IIb polytype and the (060) reflections averaging $1.53~1.54\AA$ indicate a trioctahedral structure. Chemical compositions of chlorite show that the Fe/(Fe+Mg) values are mostly in the range of 0.44~0.53, and cation deficiencies in octahedral sites range from 0.06 to 0.37. Under scanning electron microscope(SEM) chlorite occurs as well-crystallized aggregates and is subparallely stacked in interstices or between grain boundaries of associated minerals. transmission electron microscopic(TEM) images reveal that chlorite shows regular layers with $14-\AA$ spacings, locally interstratified with $7-\AA$ or $21-\AA$ periodicities. The $21- \AA$ periodicity corresponds to the sum of the $d_{001}$ values of chlorite and $7-\AA$ phase. The chlorite packet coexisting with 7-$\AA$ layers displays abundant defects such as edge dislocations and layer terminations. Selected-area electron diffraction(SAED) indicates that chlorite and $7-\AA$ phase are randomly interstratified in the mixed-layer areas. We propose a lateral change of layers for the polymorphic transition of $7-\AA$ phase to chlorite.e.

• Journal of Powder Materials
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• v.10 no.3
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• pp.195-200
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• 2003

Ni coated $Al_2O_3$ composite was successfully Prepared by the electroless deposition Process. The average size of Ni particles coated on the $Al_2O_3$ matrix powder was about 20 nm. It was hard to find any reaction compound as an impurity at interface between $Al_2O_3$ and Ni particles after sintering. The characterization of microstructure crystal structure and fracture behavior of the sintered body were investigated using XRD, TEM and Victors hardness tester, and compared with those of the sintered $Al_2O_3$ monolithic body. Many dislocations were observed in the Ni phase due to the difference of thermal expansion coefficient between $Al_2O_3$ and Ni phase, and no observed microcracks at their $Al_2O_3$ and Ni interface. In the $Al_2O_3$/Ni composite, the main fracture mode showed a mixed fracture with intergranular and transgranuluar type having some ,surface roughness. The fracture toughness was slightly increased due to the plastic deformation mechanism of Ni phase in the $Al_2O_3$/Ni composite.

• Journal of Ocean Engineering and Technology
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• v.17 no.3 s.52
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• pp.46-51
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• 2003

Acoustic emission (AE) signals, emanated during local failure of aluminum alloys, have been the subject of numerous investigations. It is well known that the characteristics of AE are strongly influenced by the previous thermal and mechanical treatment of the sample. Possible sources of AE during deformation have been suggested as the avalanche motion of dislocations, fracture of brittle particles, and debonding of these particles from the alloy matrix. The goal of the present study is to determine if AE occurring as the result of fatigue crack propagation could be evaluated by the joint time-frequency analysis method, short time Fourier transform (STFT), and Wigner-Ville distribution (WVD). The time-frequency analysis methods can be used to analyze non-stationary AE more effectively than conventional techniques. STFT is more effective than WVD in analyzing AE signals. Noise and frequency characteristics of crack openings and closures could be separated using STFT. The influence of various fatigue parameters on the frequency characteristics of AE signals was investigated.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.4
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• pp.453-459
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• 2004

25Cr-20Ni series strainless steels have an excellent high temperature strength high oxidation and high corrosion resistance. However, further improvement can be expected of creep strength by work hardening prior creep. In the present study, the effect of prestraining at room temperature on the creep behavior of a Class M(STS310S) and a Class A(STS310J1TB) alloy containing precipitates have been examined. Prestaining was carried out at room temperature and range of prestrain was 0.5-2.5 % at STS310J1TB and 2.0-7.0% at STS310S. Creep behavior and creep rate of pre-strained specimens were compared with that of virgin specimens. Room temperature prestraining produced the creep life that is longer than that of a virgin specimen both for STS310J1TB and STS310S when creep test was carried out at the temperature lower than recrystallization temperature. The reason for this improvement of creep life was ascribable to the interaction between dislocations and precipitates in addition to the dislocation-dislocation interaction in STS310J1TB and the dislocation-dislocation interaction in STS310S. The beneficial effect of prestraining in STS310J1TB was larger than that of STS310S.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.91-99
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• 1994

Damage induced by Si ion implantation and its annealing behavior during rapid thermal annealing were investigated by cross-sectional TEM (transmission electron microscopy) and RB ( Rutherford backscattering) spectrum. 150keV and 50keV Si ions were implanted in Si (100) at room temperature with doses of 2${\times}10^{15}cm^{-2}$. And 100keV Si ions were implanted in Si with doses from 1${\times}10^{14}cm^{-2}$. A variety of damage structures were generated by Si ion implantation such as continuous amorphous layer extending to the surface buried amorphous layer and damage clusters. Damage clusters are annealed out at the lower annealing temperature of 550 $^{\circ}C$. However, event at the temperature of 110$0^{\circ}C$ end of range loops remain in the original lower amorphous/crystal interface in the case of continuous and buried amorphous layer formation. Extended defects in the shape of zipper dislocations are also observed at the middle of the recrystallized region in the buried amorphous layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.53-62
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• 1992

In Zone Melting Recrystallization(ZMR) of SOl structure, thin silicon films have been recrystallized by artificial control of beam intensity profile which was obtained by tilting of upper elliptical reflector. Temperature profiles and gradients near solidification interface were calculated by numerical simulation for analysis of asymmetric line heating effect. The larger the tilting angle of the upper reflector, the larger the degree of supercooling at liquid and the interdefect spacing in thin silicon films. Major defects were continuous subgrainboundaries. Isolated threading dislocations were observed in the case of the film having low defect density. We have found that the thin silicon films were recrystallized into (100) textured single crystals by cross-sectional TEM and thin film X-ray diffraction analysis.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.699-702
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• 2009

Due to the importance of the SiGe/Si heterostructure in the fields of thermoelectric and electronic applications, SiGe/Si heterostructures have been extensively investigated. For practical applications, thermal stability of the heterostructure during the thermoelectric power generation or fabrication process of electronic devices is of great concern. In this work, we focused on the effect of thermal annealing on the defect configuration in the SiGe/Si heterostructure. The formation mechanism of planar defects in an annealed SiGe/Si heterostructure was investigated by transmission electron microscopy. Due to the interdiffusion of Si and Ge, interface migration phenomena were observed in annealed heterostructures. Because of the strain gradient in the migrated region between the original interface and the migrated interface, the glide of misfit dislocation was observed in the region and planar defects were produced by the interaction of the gliding misfit dislocations. The planar defects were confined to the migrated region, and dislocation pileup by strain gradient was the origin of the confinement of the planar defect.