• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2009.10a
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• pp.421-426
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• 2009

This paper presents vibration analysis of maskless exposure module in Printed Circuit Board (PCB) manufacturing system. In order to complete exposure process in PCB, masking type module has been widely used in electronics industries. However, masking process confronts some limitations of application due to higher production cost for masking as well as lower printing resolution. Therefore, maskless exposure module is started to be in the spotlight for flexible production system to meet the needs of fabrication in variable patterns at low cost. Since maskless exposure process adopts direct patterning to PCB, vibration problems become more critical compared to conventional masking type process. Moreover, movements of exposure engine as well as stage generate vibration sources in the system. Thus, it is imperative to analyze the vibration characteristics for the maskless exposure module to improve the quality and accuracy of PCB. In this study, vibration analysis using the Finite Element Analysis is conducted to identify the critical structural parts deteriorating vibration performance. Also, Experimental investigations are conducted by single/dual encoder measurement process under the operating module speed. Measurement points of vibration are selected by three places, which are base of stage, exposure engine and top of stage, to check the effect of vibration from the exposure engine. Comparisons between analysis results and experimental measurement are conducted to confirm the accuracy of analysis results including the developed FE model. Finally, this studies show feasibility of optimal design using the developed FE analysis model.

• 한국생물공학회:학술대회논문집
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• 2003.04a
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• pp.74-78
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• 2003

Multi-channel images of 11-MUA and 11-MUOH self-assembled monolayers were obtained by using two-dimensional surface plasmon resonance (SPR) absorption. Patterning process was simplified by exploiting direct photo-oxidation of thiol bonding (photolysis) instead of conventional photolithography. Sharper images were resolved by using a white light source in combination with a narrow bandpass filter in the visible region, minimizing the diffraction patterns on the images. The line profile calibration of the image contrast caused by different resonance conditions at each points on the sensor surface (at a fixed incident angle) enables us to discriminate the monolayer thickness in sub-nanometer scale. Furthermore, there is no signal degradation such as photo bleaching or quenching which are common in the detection methods based on the fluorescence.

• Biomedical Science Letters
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• v.19 no.3
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• pp.266-269
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• 2013

Hox genes encode transcription factors important for anterior-posterior body patterning at early stages of embryonic development. However, the precise mechanisms by which signal pathways are stimulated to regulate Hox gene expression are not clear. In the previous study, protein kinase B alpha (Akt1) has been identified as a putative upstream regulator of Hox genes, and Akt1 has shown to regulate Gcn5, a prototypical histone acetyltransferase (HAT), in a negative way in mouse embryonic fibroblast (MEF) cells. Since the activity of HAT such as the CBP/p300, and PCAF (a Gcn5 homolog), was down-regulated by Akt through a phosphorylation at the Akt consensus substrate motif (RXRXXS/T), the amino acid sequence of Gcn5 protein was analyzed. Mouse Gcn5 contains an Akt consensus substrate motif as RQRSQS sequence while human Gcn5 does not have it. In order to see whether Akt1 directly binds to Gcn5, immunoprecipitation with anti-Akt1 antibody was carried out in wild-type (WT) mouse embryonic fibroblast (MEF) cells, and then western blot analysis was performed with anti-Akt1 and anti-Gcn5 antibodies. Gcn5 protein was detected in the Akt1 immunoprecipitated samples of MEFs. This result demonstrates that Akt1 directly binds to Gcn5, which might have contributed the down regulation of the 5' Hoxc gene expressions in wild type MEF cells.

• Laser Solutions
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• v.7 no.3
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• pp.37-46
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• 2004

The shape and size variations of the nanopatterns produced on a polymer film using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture($P_{in}$), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}=1.2{\mu}W\;and\;V=12{\mu}m/s$. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage is discussed.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.97-102
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• 2003

Multi-channel images of 11-MUA(11-Mercaptoundecanoic acid) and 11-MUOH(11-Mercaptoundecanol) self-assembled monolayers were obtained by using two-dimensional surface plasmon resonance (SPR) absorption. The patterning process was simplified by exploiting direct photo-oxidation of thiol bonding (photolysis) instead of conventional photolithography. Sharper images were resolved by using a white light source in combination with a narrow bandpass filter in the visible region, minimizing the diffraction patterns on the images. The line profile calibration of the image contrast caused by different resonance conditions at each point on the sensor surface (at a fixed incident angle) enables us to discriminate the monolayer thickness in nanometer scale. Furthermore, there is no signal degradation such as photo bleaching or quenching, which are common in the detection methods based on fluorescence.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.19 no.12
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• pp.1322-1328
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• 2009

This paper presents vibration analysis of maskless exposure module in printed circuit board(PCB) manufacturing system. In order to complete exposure process in PCB, masking type module has been widely used in electronics industries. However, masking process confronts some limitations of application due to higher production cost for masking as well as lower printing resolution. Therefore, maskless exposure module is started to be in the spotlight for flexible production system to meet the needs of fabrication in variable patterns at low cost. Since maskless exposure process adopts direct patterning to PCB, vibration problems become more critical compared to conventional masking type process. Moreover, movements of exposure engine as well as stage generate vibration sources in the system. Thus, it is imperative to analyze the vibration characteristics for the maskless exposure module to improve the quality and accuracy of PCB. In this study, vibration analysis using the finite element analysis is conducted to identify the critical structural parts deteriorating vibration performance. Also, Experimental investigations are conducted by single/dual encoder measurement process under the operating module speed. Measurement points of vibration are selected by three places, which are base of stage, exposure engine and top of stage, to check the effect of vibration from the exposure engine. Comparisons between analysis results and experimental measurement are conducted to confirm the accuracy of analysis results including the developed FE model. Finally, this studies show feasibility of optimal design using the developed FE analysis model.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.480-480
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• 2011

양극산화(anodization)는 금속을 전기화학적으로 산화시켜 금속산화물로 만드는 기술로서 최근 다양한 크기의 나노 구조를 제조하는 기술로 각광받고 있으며, 이러한 기술에 의하여 얻어지는 anodic aluminum oxide(AAO)는 magnetic data storage, optoelectronic device, sensor에 적용될 수 있는 nano device 뿐만 아니라 nanostructure를 제조하기 위한 template 및 mask로써 최근 광범위 하게 연구되고 있다. 또한, AAO는 Al2O3의 단단한 구조를 가진 무기재료이므로 solid mask로써 다른 porous materials 보다 뛰어난 특성을 갖고 있다. 또한 electron-beam lithography 및 block co-polymer 에 의한 patterning 과 비교하여 매우 경제적이며, 재현성이 우수할 뿐만 아니라 대면적에서 나노 구조의 크기 및 형상제어가 비교적 쉽기 때문에 널리 사용되고 있다. 그러나, AAO 형성 시 생기게 되는 반구형 모양의 barrier layer는 물질(substance)과 기판과의 direct physical and electrical contact을 방해하기 때문에 해결해야 할 가장 큰 문제점 중 하나로 알려져 있다. 따라서 본 연구에서는 실리콘 기판위의 형성된 AAO의 barrier layer를 Cl/BCl3 gas mixture에서 Neutral Beam Etching (NBE)과 Ion Beam Etching (IBE) 로 각각 식각한 후 그 결과와 비교하였다. NBE와 IBE 모두 Cl2/BCl3 gas mixture에서 BCl3 gas의 첨가량이 60% 일 경우 etch rate이 가장 높게 나타났고, optical emission spectroscopy (OES)로 Cl2/BCl3 플라즈마 내의 Cl radical density와 X-ray photoelectron spectroscopy (XPS)로 AAO 표면 위를 관찰한 결과 휘발성 BOxCly의 형성이 AAO 식각에 크게 관여함을 확인 할 수 있었다. 또한, NBE와 IBE 실험한 다양한 Cl2/BCl3 gas mixture ratio 에서 AAO가 식각이 되지만, 이온빔의 경우 나노사이즈의 AAO pore의 charging에 의해 pore 아래쪽의 위치한 barrier layer를 어떤 식각조건에서도 제거하지 못하였다. 하지만, NBE에서는 BCl3-rich Cl2/BCl3 gas mixture인 식각조건에서 AAO pore에 휘발성 BOxCly를 형성하면서 barrier layer를 제거할 수 있었다.

• Polymer(Korea)
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• v.28 no.4
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• pp.305-313
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• 2004

A vacuum pressure-difference technique for making a nano-precision replica is investigated for various applications. Master patterns for replication were fabricated using a nano-replication printing (nRP) process. In the nRP process, any picture and pattern can be replicated from a bitmap figure file in the range of several micrometers with resolution of 200nm. A liquid-state monomer is solidified by two-photon absorption (TPA) induced by a femto-second laser according to a voxel matrix scanning. After polymerization, the remaining monomers were removed simply by using ethanol droplets. And then, a gold metal layer of about 30nm thickness was deposited on the fabricated master patterns prior to polydimethylsiloxane molding for preventing bonding between the master and the polydimethylsiloxane mold. A few gold particles attached on the polydimethylsiloxane stamp during detaching process were removed by a gold selecting etchant. After fabricating the polydimethylsiloxane mold, a nano-precision polydimethylsiloxane replica was reproduced. More precise replica was produced by the vacuum pressure-difference technique that is proposed in this paper. Through this study, direct patterning on a glass plate, replicating a polydimethylsiloxane mold, and reproducing polydimethylsiloxane replica are demonstrated with a vacuum pressure-difference technique for various micro/nano-applications.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.25-29
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• 2020

This study demonstrates direct-patternable amorphous TiO_x resistive switching (RS) device and the fabrication method using photochemical metal-organic deposition (PMOD). For making photosensitive stock solutions, Ti(IV) 2-ethylhexanoate was used as starting precursor. Photochemical reaction by UV exposure was observed and analyzed by Fourier transform infrared spectroscopy and the reaction was completed within 10 minutes. Uniformly formed 20 nm thick amorphous TiO_x film was confirmed by atomic force microscopy. Amorphous TiO_x RS device, formed as 6 × 6 ㎛ square on 4 ㎛ width electrode, showed forming-less RS behavior in ±4 V and on/off ratio ≈ 20 at 0.1 V. This result shows PMOD process could be applied for low temperature processed ReRAM device and/or low cost, flexible memory device.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.