• Korean Journal of Materials Research
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• v.27 no.1
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• pp.48-52
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• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1265-1267
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• 1993

The switching and the retention characteristics with the injection conditions(pulse height and pulse width) were investigated in the nonvolatile MNOS memories with thin oxide layer of $23{\AA}$ thick. The shift of flatband voltage was measured using the fast ramp C-V method and experimental results were analized using the previously developed models. It was shown that the experimental results were described quit well by the trap-assisted and modified Fowler-Nordheim tunneling models for the voltage pulse of $15V{\sim}19V,\;24V{\sim}25V$, respectively. However, the direct tunneling model was agreement with experimental values in all range of pulse height. As increasing the initial shift of the flatband voltage, the decay rate was increased. But for the same initial shift of the flatband voltage, the decay rate was smaller for low and long pulse than for high and short one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.466-468
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• 2009

The metal-insulator-silicon (MIS) capacitors with $SiO_2$ and high-k dielectrics ($HfO_2$, $Al_2O_3$) were fabricated, and the current-voltage characteristics were investigated. Especially, an effective barrier height between metal gate and dielectric was extracted by using Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot of quantum mechanical(QM) modeling. The calculated barrier heights of thermal $SiO_2$, ALD $SiO_2$, $HfO_2$ and $Al_2O_3$ are 3.35 eV, 0.6 eV, 1.75 eV, and 2.65 eV, respectively. Therefore, the performance of non-volatile memory devices can be improved by using engineered tunnel barrier which is considered effective barrier height of high-k materials.

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1187-1194
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• 2011

The hydrogen abstraction reaction of $CF_3CH_2CHO$ + OH has been studied theoretically by dual-level direct dynamics method. Two stable conformers, trans- and cis-$CF_3CH_2CHO$, have been located, and there are four distinct OH hydrogen-abstraction channels from t-$CF_3CH_2CHO$ and two channels from c-$CF_3CH_2CHO$. The required potential energy surface information for the kinetic calculation was obtained at the MCG3-MPWB//M06-2X/aug-cc-pVDZ level. The rate constants, which were calculated using improved canonical transitionstate theory with small-curvature tunneling correction (ICVT/SCT) were fitted by a four-parameter Arrhenius equation. It is shown that the reaction proceeds predominantly via the H-abstraction from the -CHO group over the temperature range 200-2000 K. The calculated rate constants were in good agreement with the experimental data between 263 and 358 K.

• Journal of KIISE:Information Networking
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• v.34 no.1
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• pp.33-40
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• 2007

A multihomed enterprise or AS(Autonomous System) improves reliability and performance by acquiring its Internet connectivity from more than two ISP(Internet Service Provider). Multihoming protocol must allow a multihomed site whose connectivity through one of the ISPs fails to keep its Internet connectivity As one of mechanisms to do this, tunneling mechanism through Non-direct EBGP(Exterior Border Gateway Protocol) is defined. This mechanism makes connectivity to the Internet more reliable, but causes the problem that makes the communication route non-optimal. In this paper, we propose the route optimization mechanism using an extension header in the IPv6 multihoming environment.

• Geomechanics and Engineering
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• v.21 no.4
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• pp.391-399
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• 2020

Brittleness is one of the most important properties of rock which has a major impact not only on the failure process of intact rock but also on the response of rock mass to tunneling and mining projects. Due to the lack of a universally accepted definition of rock brittleness, a wide range of methods, including direct and indirect methods, have been developed for its measurement. Measuring rock brittleness by direct methods requires special equipment which may lead to financial inconveniences and is usually unavailable in most of rock mechanic laboratories. Accordingly, this study aimed to develop a new strength-based index for predicting rock brittleness based on the obtained base form. To this end, an innovative algorithm was developed in Matlab environment. The utilized algorithm finds the optimal index based on the open access dataset including the results of punch penetration test (PPT), uniaxial compressive and Brazilian tensile strength. Validation of proposed index was checked by the coefficient of determination (R²), the root mean square error (RMSE), and also the variance for account (VAF). The results indicated that among the different brittleness indices, the suggested equation is the most accurate one, since it has the optimal R², RMSE and VAF as 0.912, 3.47 and 89.8%, respectively. It could finally be concluded that, using the proposed brittleness index, rock brittleness can be reliably predicted with a high level of accuracy.

• Proceedings of the Korean Information Science Society Conference
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• 2002.04a
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• pp.613-615
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• 2002

본 논문에서는 멀티미디어 데이터의 증가로 인한 네트워크 전송량 폭주 현상 및 서비스 비용의 증가를 감소시키기 위한 방법으로, 부하분산과 관련된 가상서버의 개념에 대해서 알아보고, 대표적인 가상 서버중 하나인 리눅스 가상 서버 (LVS : Linux Virtual Server)의 성능 측정을 통해 멀티미디어 컨텐츠 전송에 사용되는 CDD 시스템에 가장 적합한 가상서버의 구성 및 알고리즘을 도출하였다. 이를 위해서 리눅스 가상서버 시스템을 구축하고, 3가지 구성방식과 8가지 스케줄링 알고리즘에 대한 성능 평가를 수행하였으며, 각 경우에 대한 비교분석을 하였다. 이를 토대로, 추후 CDD 시스템과의 접목을 통하여 네트워크 부하량을 감소시키고, 서버로부터 발생할 수 있는 병목현상을 적은 비용으로 해결할 수 있는 방향을 제시하고자 하였다.

• Ceramist
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• v.4 no.1
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• pp.46-55
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• 2001

$SiO_2$ 절연막의 우수한 절연특성 및 계면 특성으로 인해 지난 40여년 간 MOSFET 소자에 사용되어 왔으나, 차세대 $0.1{\mu}m$ 소자에서는 direct tunneling에 의한 누설전류가 지나치게 증가하여 더 이상 사용되기가 어렵다. 이에 대한 대안으로 많은 연구 그룹에서 고유전율 박막에 대한 연구를 하고 있으나 아직까지 $SiO_2$와 비교할 만한 탁월한 계면특성을 가진 절연막은 개발되어 있지 않아서, 수년 내에 개발될 $0.1{\mu}m$ MOSFET 소자의 개발에 가장 심각한 기술적 문제로 지적되고 있다. 현재의 연구경향을 종합할 때, $HfO_2$, $ZrO_2$, $HfSiO_x$, $ZrSiO_x$를 이용하여 계면 공정의 최적화를 통해 1-2nm급의 절연막을 구현하고, 1nm급 이하에서는 이보다 더 높은 유전상수를 가지는 재료의 선택과 이를 epitaxy로 성장시키는 방법에 대한 연구가 필수적이다.

• Proceedings of the Korean Information Science Society Conference
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• 2001.04a
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• pp.727-729
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• 2001

인터넷 사용이 보편화되면서 많은 사용자의 요청이 있더라도 만족할 만한 서비스를 제공할 수 있는 웹 서버가 필요로 하게 되었다. 이로 인해 최근 가상서버를 이용한 웹 서버 클러스터의 구축사례가 늘고 있다. 리눅스 운영체제와 값 싼 일반 PC를 이용하여 추가적인 비용 부담이 덜하고, IP Tunneling과 Direct Routing 같은 방법을 사용하여 후면 서버가 사용자에게 직접 응답할 수 있으므로 전면 서버의 병목현상을 줄일 수 있는 장점이 있다. 그러나 한 대의 전면 서버로는 그 한계가 있다. 그래서 본 논문에서는 전면 서버와 후면 서버의 구분을 없애고 모든 서버가 전면 서버와 후면 서버의 역할을 다 할 수 있는 웹 서버 클러스터를 제시한다. 다수의 전면 서버를 두어 전면 서버의 고가용성도 보장할 수 있고, 병목현상에 대해 좀 더 효율적인 대응을 할 수 있으며, 시스템 추가에 대한 손쉬운 확장성을 보장할 수 있다. 각 노드의 부하 정보에 의한 스케쥴링을 통해 좀 더 효율적인 클러스터 시스템을 구성하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.404-404
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• 2010

Despite much works have been done on the geometric structures of ripples, defects and edge atoms in a graphene device, there has been no report showing the direct correlation between the structures and the transport property. Unlike scanning tunneling microscopy or other electron microscopes, Scanning Gate Microscope (SGM) is a unique microscopic tool with which the local electronic structure and the transport property of a device can be measured simultaneously. We have performed a transport measurement in nanometer scale using a scanning gate microscope (SGM). We have found the nanoscopic pictures of electron and hole puddles and the role of graphene- device edges in the transport measurements. These experimental findings were successfully explained with a theoretical model.