• 전자공학회논문지D
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• 제36D권7호
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• pp.26-33
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• 1999

4빔 브릿지형 압저항형 실리콘 가속도 센서에서 빔의 위치가 가속도 센서의 특성에 어떤 영향을 주는지 조사하기 위해서 빔의 위치가 서로 다른 3가지 형태의 가속도 센서를 FEM(finite element method)을 사용하여 해석하고, SDB(silicon direct bonding) 웨이퍼를 사용하여 RIE(reactive ion etching)와 KOH(potassium hydroxide) 애칭 공정으로 제조하였다. 세가지 형태의 가속도 센서에 대한 FEM 해석 경과, 첫 번째 공진 주파수와 Z축 감도는 세구조 모두 같게 나타났으나, 두 번째와 세 번째의 공진 주파수 및 X, Y축의 감도는 다른 것으로 나타났다. 제조된 가속도 센서의 특성을 살펴볼 때, 세 가지 형태의 센서는 비록 첫 번째 공진 주파수와 Z축 감도가 정확하게 일치하지는 않았지만, 첫 번째 공진 주파수는 1.3 ~ 1.7 KHz, Z축 감도는 5 V 인가시 180 ~ 220 lN/G, 타축감도는 1.7 ~ 2 %를 가지는 것으론 나타났다.

• Restorative Dentistry and Endodontics
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• 제27권6호
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• pp.569-576
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• 2002

This study was peformed to evaluate the interfacial shear bond strength of base (direct and indirect) and repair composites with aging and surface treatment methods. Direct composite resin specimens ($Charisma^{\circledR}$, Heraeus Kulzer, Germany) were aged for 5 min, 1 hour, 24 hours, and 1 week in $37^{\circ}C$ distilled water before surface treatment, and then divided into five groups Group 1, grinding; Group 2, grinding and application of bonding agent, Group 3, grinding, etching with 37% phosphoric acid for 30sec, and application of bonding agent, Group 4, grinding, etching with 37% phosphoric acid for 30sec, silane treatment, and application of bonding agent ; Group 5, grinding, etching with 4% hydrofluoric acid for 30sec. silane treatment, and application of bonding agent. Indirect composite resin specimens ($Artglass^{\circledR}$, Heraeus Kulzer, Germany) were aged for 1 week in $37^{\circ}C$ distilled water and divided into seven groups Group 1 - Group 5, equal to Charisma specimens; Group 6, grinding, etching with 37% phosphoric acid for 60sec, silane treatment, and application of bonding agent; Group7, grinding, etching with 4% hydrofluoric acid for 60 sec, silane treatment, and application of bond-ing agent. The repair material($Charisma^{\circledR}$) was then added on the center of the surface (5 mm in diameter. 5 mm in height). The shear bond strength was tested and the data was analyzed using one-way ANOVA and the Student- Newman-Keuls test. The following conclusions were drawn. 1 The shear bond strength of $Charisma^{\circledR}$ specimens aged for 1 hour was significantly higher in Group 2 and Group 5 than in Group 1 (p<0.05), and that of $Charisma^{\circledR}$ specimens aged for 1 week was signifi-cantly higher in Group 3 and Group 5 than in Group 1 (p<0.05). No significant difference was found in the bond strength of specimens aged for 5 min and 24 hours. 2. In Group 2 of the $Charisma^{\circledR}$ specimens, there was significant difference between the bond strength of 24 hours and that of 1 week (p<0.05). 3. In Group 4 of the $Charisma^{\circledR}$ specimens, the shear bond strength of specimens aged for 24 hours was significantly higher than the others(p<0.05) 4. There was no significant difference between the shear bond strength of the $Artglass^{\circledR}$ specimens, 5. Most of the $Charisma^{\circledR}$ specimens showed cohesive fractures. Artglass^{\circledR}$ specimens that were etched with acid (phosphoric or hydrofluoric) for 30 sec showed more cohesive fractures.

• 소성∙가공
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• 제14권5호
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• pp.473-476
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• 2005

The demand of on-chip total analyzing system with MEMS (micro electro mechanical system) bio/chemical sensor is rapidly increasing. In on-chip total analyzing system, to detect the bio/chemical products with submicron feature size, a filtration system with nano-filter is required. One of the conventional methods to fabricate nano-filter is to use direct patterning or RIE (reactive ion etching). However, those procedures are very costly and are not suitable fur mass production. In this study, we suggested new fabrication method for a nano-filter based on replication process, which is simple and low cost process. After the Si master was fabricated by laser interference lithography and reactive ion etching process, the polymeric mold was replicated by UV-imprint process. Metallic nano-filter was fabricated after removing the polymeric part of metal deposited polymeric mold. Finally, our fabrication method was applied to metallic nano-filter with $1{\mu}m$ pitch size and $0.4{\mu}m$ hole size for bacteria sensor application.

• Transactions on Electrical and Electronic Materials
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• 제9권1호
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• pp.1-5
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• 2008

ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.401-401
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• 2011

In this work, we deposited Al2O3doped ZnO (AZO) thin films by direct current (DC) magnetron sputtering method with a $40^{\circ}$ tilted target, for application in the front layer of thin film solar cell. Wet chemical etching behavior of AZO films was also investigated. In order to optimize textured AZO films, oxalic acid ($C_2H_2O_4$)has been used as wet etchant of AZO film. In this experiment we used 0.001% concentration of oxalic acid various etching time, that showed an anisotropy in etching texture of AZO films. Electrical resistivity, Hall mobility and carrier concentration measurements are performed by using the Hall measurement, that are $6{\times}10^{-4}{\Omega}cm$, $20{\sim}25cm^2/V-s$ and $4{\sim}6{\times}10^{20}$, respectively.

• 센서학회지
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• 제6권6호
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• pp.430-436
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• 1997

SDB웨이퍼를 사용한 압저항 형태의 50 G용 가속도 센서를 실리콘 마이크로머시닝을 사용하여 제조하였다. 이 형태의 가속도 센서는 진동하는 사각형의 매스와 4개의 빔으로 구성되어 있다. 이 구조는 RIE를 이용한 건식식각과 KOH 용액을 이용한 습식식각을 이용하여 제조되었다. 정사각형의 보상구조가 매스 가장자리의 언더에칭에 기인하는 변형을 보상하기 위해 사용되었다. 제조된 센서는 인가된 가속도에 대하여 선형적인 출력전압특성을 보여주고 감도는 0에서 10 G까지 약 $88{\mu}V/V{\cdot}g$이었다.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.166-169
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• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

• 대한소아치과학회지
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• 제34권1호
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• pp.106-121
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• 2007

본 연구는 치면열구전색술시 치과용 염료를 이용하여 초기 우식병소의 유무와 유기물의 잔재를 확인하고 산부식 액의 도포시 brushing방법을 이용하여 침투를 깊이 유도함으로써 열구내 법랑질의 산부식 상태를 유지력을 얻기 위한 최상의 상태로 만들고자 하는 목적으로 자연치를 대상으로 여러 가지 치면세마법과 비교하여 다음과 같은 결과를 얻었다. 1. 실험군은 기존의 치면세마법보다 변연누출이 적었으나 enameloplasty를 시행한 군과는 차이가 없었다. 2. 법랑질 산부식 형태의 질이 향상되었다. 3. 실험군은 다른 군에 비해 미세결합강도가 높았다. 4. 구강내 환경적 조건이 치면열구전색재의 성공실패를 좌우한다. 이상의 결과를 종합하면 치면열구전색술시 치과용 염료와 산부식 액의 도포시 brushing 방법을 이용하여 침투를 깊이 유도하므로써 수복물의 성공적인 도포를 제공할 수 있다고 사료된다.

• Applied Science and Convergence Technology
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• 제24권4호
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• pp.117-124
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• 2015

A direct growth method of graphene on insulating substrate without catalyst etching and transfer process was developed using Au/Ni/a-C catalyst system. During the growth process, behavior of the Au/Ni catalyst was investigated using EDX, XPS, SEM, and Raman spectroscopy. The Au/Ni catalyst layer was evaporated during growth process of graphene. The graphene film was composed mono-layer flakes. The transmittance of the graphene film was ~80.6%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
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• pp.132-134
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• 2006

To improve equipment throughput and device yield, a malfunction in plasma equipment should be accurately diagnosed. A recognition model for plasma diagnosis was constructed by applying neural network to scanning electron microscope (SEM) image of plasma-etched patterns. The experimental data were collected from a plasma etching of tungsten thin films. Faults in plasma were generated by simulating a variation in process parameters. Feature vectors were obtained by applying direct and wavelet techniques to SEM Images. The wavelet techniques generated three feature vectors composed of detailed components. The diagnosis models constructed were evaluated in terms of the recognition accuracy. The direct technique yielded much smaller recognition accuracy with respect to the wavelet technique. The improvement was about 82%. This demonstrates that the direct method is more effective in constructing a neural network model of SEM profile information.