• Journal of the Korean Society for Precision Engineering
• /
• v.31 no.12
• /
• pp.1061-1066
• /
• 2014

Generally electrical circuits are fabricated as PCB(Printed Circuit Board) and mounted on a casing of the product. And it requires lots of other parts and some labor for assembly. Recently a molding technology is increasingly applied to embed simple circuits on a plastic casing. The technology is called as MID(Molded Interconnected Device). Therefore this paper introduces a new MID fabrication process by using direct 3D printing technology.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.105-106
• /
• 1998

Evaluation of def3ects by etch-ppit formation was studied. A NaOH(30 mol%) etchant was found useful for etch-ppit developpment on ZnSe-based eppilayers grown on (001) gaAs. And a H3ppO4(85 mol%) was used in order to developp etch-ppits on GaN-base eppilayers grown on (0001) Al2O3 After etch-ppit formation on the surfsce. Transmission Electron Microscoppy(TEM) was cppmdicted. By etch-ppit developpment and TEM observation we could determine the defect typpes by etch-ppit configurfations and found origin of etch-ppit in the cse of ZnSe-based materials. Based uppon these results we can do defect identification by etch-ppit test simpply. In the case of GaN-based materials we could evaluate nanoppippe density. however high density of threading dislocations in GaN eppilayers were not revealed by etch-ppit developpment. Based uppon these results we can evaluate the nanoppippe density which difficult to evaluate using TEM beacause of its small size(diameter). And at ppresent status direct matching of etch-ppit density to dislocation density would make severe mistake.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.99-102
• /
• 1999

A mixture which was made from organic gel, glass powder and ceramic powder was masklessly etched for fabrication of barrier rib of PDP(Plasma Display Panel) by focused Ar$^{+}$ laser( λ =514 nm) and Nd:YAG(λ =532, 266 nm) laser irradiation at the atmosphere. The depth of the etched grooves increases with increasing a laser fluence and decreasing a scan speed. Using second harmonic of Nd:YAG laser, the threshold laser fluence was 6.5 mJ/$\textrm{cm}^2$ for the sample of PDP barrier rib softened at 12$0^{\circ}C$. The thickness of 130 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5 J/$\textrm{cm}^2$....

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.176-177
• /
• 2005

PDMS는 생명공학 분야에서 중요한 기술적 폴리머이다. Nd:YAG레이저의 4고조파 ($\lambda$=266nm, pulse) 레이저를 사용하여 표면 처리를 하여 PDMS 표면의 습윤성과 접착성의 향상됨을 확인하였다. 식각한 PDMS는 샘물체의 미세회로에 사용될 수 있다. 본 논문은 레이저 빔의 주사속도를 변화시키며 PDMS를 레이저로 식각하며 PDMS의 식각 특성을 연구한다 식각 특성을 의존성이 가장 효과적인 주사 속도에 대한 의존성을 규명하고자 스테이지 컨트롤러의 속도를 변화시키며 실험하였다. 그리고 최적의 레이저 출력값을 알아내려고 레이저 출력값을 조절하며 실험 하였다. 단차측정기(알파스템)을 이용하여 식각형상과 식각 효율 등을 분석하였다.

• Restorative Dentistry and Endodontics
• /
• v.18 no.1
• /
• pp.55-72
• /
• 1993

The aim of this study was to compare the marginal leakage of class II light curing composite resin restoration according to filling methods. With using acid etching technique and dentin bonding agent, various methods were suggested to eliminate or reduce the marginal leakage. In this study, class II cavities were prepared in 100 extracted human premolars with cementum margin(1mm below the CEJ) and the teeth were randomly assigned to 5 groups of 20 teeth each. The teeth in group 1, 2, 3 and 4 were restored by direct filling methods using P-50 and Clearfil Photoposterior of 10 teeth each, but the method of insertion of the restorative materials varied with each group. And the teeth in group 5 were restored by inlay method using Kulzer Inlay and CR Inlay. Filling methods are as follows : Group 1 : The composite resin was inserted in one layer in the proximal box and one layer in the occlusal portion. Group 2 : Insertion was in two equally thick horizontal layers in the proximal box. Group 3 : Insertion was in two diagonally placed layers in the proximal box. Group 4 : The composite resin was inserted in the same way as in group 3 except that a glass ionomer liner was first placed on the axial wall and gingival floor. Group 5 : The teeth were restored by Inlay technique using dure cure resin cement. All the teeth were thermocycled, stained with 1 % methylene blue solution, sectioned mesiodistally, and scored for marginal leakage. To compare the marginal leakage, ANOVA and T-test were used in analysis. The following results were obtained : 1. In direct filling methods, there was no significant difference in marginal leakage at both occlusal and cervical margins. 2. In all groups, occlusal margin showed significantly less leakage than cervical margin. 3. In group using glass ionomer liner, there was no significant reduction of marginal leakage at the cervical margin. 4. The group restored by inlay method showed significantly less marginal leakage than groups restored by direct filling methods at both occlusal and gingival margins. 5. There was no significant difference in each group according to filling materials.

• Journal of Sensor Science and Technology
• /
• v.11 no.3
• /
• pp.183-190
• /
• 2002

Photoluminescence(PL) properties of $Si^+$-implanted $SiO_2$ film, which was thermally grown on c-Si substrate, is reported. We have compared room temperature photoluminescence (PL) spectra of the samples which was made in several kinds of implantation, subsequent annealing and $SiO_2$ film thickness. XRD data was correlated with the PL spectra. Silicon nanocrystals in $SiO_2$ film is considered as the origin of the photoluminescence. PL spectra was investigated after wet etching of the $SiO_2$ film by using BOE (Buffered Oxide Etchant) at every one minute. PL peak wavelength was varied as the etching is proceeded. These results indicate that the quantity and the distribution of dominant size of Si nanocrystals in $SiO_2$ film seem to have a direct effect on PL spectrum.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.3 no.3
• /
• pp.661-669
• /
• 1999

A probe card is one of the most important pan of test systems as testing IC(integrated circuit) chips. This work was related to bump-type silicon vertical probe card which enabled simultaneous tests for multiple semiconductor chips. The probe consists of silicon cantilever with bump tip. In order to obtain optimum size of the cantilever, the dimensions were determined by FEM(finite element method) analysis. The probe was fabricated by RIE(reactive ion etching), isotropic etching, and bulk-micromachining using SDB(silicon direct bonding) wafer. The optimum height of the bump of the probe detemimed by FEM simulation was 30um. The optimum thickness, width, and length of the cantilever were 20 $\mum$, 100 $\mum$,and 400 $\mum$,respectively. Contact resistance of the fabricated probe card measured at contact resistance testing was less than $2\Omega$. It was also confirmed that its life time was more than 20,000 contacts because there was no change of contact resistance after 20,000 contacts.

• Korean Journal of Materials Research
• /
• v.8 no.10
• /
• pp.890-897
• /
• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

• The Bulletin of The Korean Astronomical Society
• /
• v.36 no.2
• /
• pp.125.2-125.2
• /
• 2011

We are developing medium resolution cross-dispersed silicon grisms in the near IR region ($1.45{\sim}5.2{\mu}m$). The grisms will be installed in MIMIR, a multifunction instrument at the Lowel Observatory, USA. The two devices are designed to cover H and K band and L and M band simultaneously. Our goal is to make grism with R=3000 at 1.2 arcsec slit. The Silicon has high refractive index (n=3.4 at $1.5{\mu}m$) which enhances the resolving power by up to 5 times when compared to conventional material such as BK-7 (n=1.5 at 1.5 ${\mu}m$). The bonded grisms will be installed in a filter wheel for the uses switch from spectroscopic mode to imaging mode easily. Our device is compact and light weighted while it provides a decent resolving power. We produce monolithic grisms using e-beam lithography at the NASA JPL and chemically etching the grooves on the silicon prisms. Moreover, the main-disperser and cross-disperser will be contacted together by direct Si-Si bonding technique and eventually turn into one piece. The bonded pair offers more stability in terms of the layout of the spectrum and removes the Fresnel loss at the intersection of two grisms. We report on the proper wafer bonding steps through this research, and inspected the bonding quality thermally, optically and mechanically.

• Proceedings of the KIEE Conference
• /
• 1999.07g
• /
• pp.3310-3312
• /
• 1999

We have studied the method of silicon direct bonding using the mixture of $HNO_$, $H_2O_2$, and HF chemicals called the controlled slight etch (CSE) solution for the effective wafer cleaning. CSE, two combinations of oxidizing and etching agents, have been used to clean the silicon surfaces prior to wafer bonding. Two wafers of silicon and silicon dioxide were contacted each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in $N_2$ ambient for 2.5 h. We have cleaned silicon wafers with the various HF concentrations and characterized the parameters with regard to surface roughness, chemical nature, chemical oxide thickness, and bonding energy. It was observed that the chemical oxide thickness on silicon wafer decreased with increasing HF concentrations. The initial interfacial energy and final energy postannealed at $1100^{\circ}C$ for 2.5h measured by the crack propagation method was 122 $mJ/m^2$ and 2.96 $mJ/m^2$, respectively.