• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 1995.05a
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• pp.141-145
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• 1995

석탄액화반응의 촉진을 위하여 기존에 사용되어 온 담지촉매는 coking, metal deposition, pore plugging의 문제로 인하여 촉매의 활성을 지속적으로 유지할 수 없으며 고가이기때문에 최근에는 이러한 문제점을 보완할 수 있는 고분산 균일촉매에 관한 연구가 집중적으로 수행되고 있다. 그러나 분산촉매 중에서도 고활성을 나타내는 Mo, Ni, Co 성분은 고가이므로 이를 대체할 수 있는 촉매로서 값이 싼 Fe 성분에 관심이 모아지고 있지만 현재로서는 자체활성이 상대적으로 낮으므로 퍼센트단위의 많은 양을 사용해야하는 문제점을 안고 있다고 할 수 있다.

• Journal of the Korean Solar Energy Society
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• v.26 no.1
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• pp.57-64
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• 2006

Cr-CrO cermet solar selective coatings with a double cermets layer film structure were prepared using a special direct current (dc) magnetron sputtering technology. The typical films structures from surface to bottom substrate were measured to be an $Al_2O_3$ anti-reflection layer on a double Cr-CrO cermet layer on an Al metal infrared reflection layer. Optical properties of optimized Cr-CrO cermet solar selective coating were absorptance (${\alpha}$) = 0.95 and emittance (${\varepsilon}$) = 0.10 ($100^{\circ}C$). Atomic force microscopy (AFM) image showed that Cr-CrO cermet film was very smooth and their grain size was also very small The results of thermal stability test showed that the Cr-CrO cermet solar selective coatings were stable for use at temperature of $400^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• Journal of Powder Materials
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• v.28 no.5
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• pp.417-422
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• 2021

In the present work, Inconel 718 alloy is additively manufactured on the Ti-6Al-4V alloy, and a functionally graded material is built between Inconel 718 and Ti-6Al-4V alloys. The vanadium interlayer is applied to prevent the formation of detrimental intermetallic compounds between Ti-6Al-4V and Inconel 718 by direct joining. The additive manufacturing of Inconel 718 alloy is performed by changing the laser power and scan speed. The microstructures of the joint interface are characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and micro X-ray diffraction. Additive manufacturing is successfully performed by changing the energy input. The micro Vickers hardness of the additive manufactured Inconel 718 dramatically increased owing to the presence of the Cr-oxide phase, which is formed by the difference in energy input.

• Transactions of Materials Processing
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• v.27 no.1
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• pp.5-11
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• 2018

Direct energy deposition (DED) technique uses a laser heat source to deposit a metal layer on a substrate. Many researchers have used the DED technique to study the hardfacing of molds and dies. The aim of this study is to obtain high surface hardness and a sound bonding between the AISI M4 deposits and a substrate utilizing a mixed powder that contains M4 and AISI P21 powders. To prevent interfacial cracks between the M4 deposits and the substrate, the mixed powder is pre-deposited onto a JIS S45C substrate, before the deposition of M4 powders. Interfacial defects occurring between the deposits and substrate and changes in the microhardness of the intermediate layer were examined. Observations of the cross-sections of deposited specimens revealed that the interfacial cracks appeared in samples with one and two mixed layers regardless of the mixture ratio. However, the crack was removed by increasing the mixture ratio and the number of intermediate layers. Meanwhile, the microhardness in the mixed layer was found to decrease with increasing ratio of P21 powder in the mixture and that in the upper region of the deposited layers was approximately 800 HV, which was attributed to various alloying elements in the M4 powder.

• Corrosion Science and Technology
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• v.18 no.5
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• pp.206-211
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• 2019

Silicon carbide (SiC) thin films become superhard when they have microstructures of nanocolumnar crystalline grains (NCCG) with an intergranular amorphous SiC matrix. We investigated the role of ion bombardment and deposition temperature in forming the NCCG in SiC thin films. A direct-current (DC) unbalanced magnetron sputtering method was used with pure Ar as sputtering gas to deposit the SiC thin films at fixed target power of 200 W and chamber pressure of 0.4 Pa. The Ar ion bombardment of the deposited films was conducted by applying a negative DC bias voltage 0-100 V to the substrate during deposition. The deposition temperature was varied between room temperature and $450^{\circ}C$. Above a critical bias voltage of -80 V, the NCCG formed, whereas, below it, the SiC films were amorphous. Additionally, a minimum thermal energy (corresponding to a deposition temperature of $450^{\circ}C$ in this study) was required for the NCCG formation. Transmission electron microscopy, Raman spectroscopy, and glancing angle X-ray diffraction analysis (GAXRD) were conducted to probe the samples' structural characteristics. Of those methods, Raman spectroscopy was a particularly efficient non-destructive tool to analyze the formation of the SiC NCCG in the film, whereas GAXRD was insufficiently sensitive.

• Journal of Advanced Marine Engineering and Technology
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• v.20 no.5
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• pp.93-102
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• 1996

Laser-induced plume and laser-target interaction during pulsed laser deposition are demonstrated for a lead zirconate titanate (PZT). A KrF excimer laser (wavelength 248nm) was used and the laser was pulsed at 20Hz, with nominal pulse width of 20ns. The laser fluence was~$16J/cm^2,$ with 100mJ per pulse. The laser-induced plasma plume for nanosecond laser irradiation on PZT target has been investigated by optical emission spectra using an optical multichannel analyzer(OMA) and by direct observation of the plume using an ICCD high speed photography. OMA analysis showed two distinct ionic species with different expansion velocities of fast or slow according to their ionization states. The ion velocity of the front surface of the developing plume was about $10^7$cm/sec and corresponding kinetic energy was about 100eV. ICCD photograph showed another kind of even slower moving particles ejected from the target. These particles considered expelled molten parts of the target. SEM morphologies of the laser irradiated targets showed drastic melting and material removal by the laser pulse, and also showed the evidence of the molten particle ejection. The physics of the plasma(plume) formation and particle ejection has been discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.380.2-380.2
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• 2014

Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

• Journal of the Korean Solar Energy Society
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• v.28 no.1
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• pp.33-42
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• 2008

Zr-O ($Zr-ZrO_2$) cermets solar selective coatings with a double cermets layer film structure were prepared using a DC (direct current) magnetron sputtering method. The typical film structure from surface to bottom substrate were an $Al_2O_3$ anti-reflection layer on a double Zr-O cermets layer on an Al metal infrared reflection layer. Optical properties of optimized Zr-O cermets solar selective coating had an absorptance of ${\alpha}\;=\;0.95$ and thermal omittance of ${\epsilon}\;=\;0.10\;(100^{\circ}C)$. The absorbing layer of Zr-O cermets coatings on glass and silicon substrate was identified as being amorphous by using XRD. AFM showed that ZF-O cermets layers were very smooth and their surface roughness were approximately $0.1{\sim}0.2 nm$. The chemical analysis of the cermets coatings were determined by using XPS. Chemical shift of photoelectron binding energy was occurred due to the change of Zr-O cermets coating structure deposited with increase in oxygen flow rate. The result of thermal stability test showed that the Zr-O cermets solar selective coating was stable for use at temperature below $350^{\circ}C$.

• Journal of the Korean Electrochemical Society
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• v.12 no.1
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• pp.81-87
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• 2009

An indium-tin oxide (ITO) coated spinel manganese oxide (${LiMn_2}{O_4}$, LMO) is prepared and its high-temperature ($55^{\circ}C$) cycle performance and rate capability are examined. A severe electrolyte decomposition and film deposition is observed on the un-coated ${LiMn_2}{O_4}$ cathode, which leads to a significant electrode polarization and capacity fading. Such an electrode polarization is, however, greatly reduced for the ITO-coated (> 2 mol%) LMO cathode, which leads to an improved cycle performance. This can be rationalized by a suppression of electrolyte decomposition, which is in turn indebted to a decrease in the direct contact area between LMO and electrolyte. The suppression of film deposition on the ITO-coated LMO cathode is confirmed by infra-red spectroscopy. The rate capability is also improved by the surface coating, which may be resulted from a suppression of resistive film deposition and high electric conductivity of ITO itself.