• Title/Summary/Keyword: Direct electron flow

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Charge Transfer Mechanism of Electrically Bistable Switching Devices based on Polyimide

  • Lee, Gyeong-Jae;Im, Gyu-Uk;Kim, Dong-Min;Lee, Mun-Ho;Gang, Tae-Hui;Jeong, Seok-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.374-374
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    • 2010
  • Charge transfer mechanism of poly(4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (TP6F PI) which exhibits bistable ON and OFF switching has been studied using photoemission electron spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS). Here, we demonstrate novel set-up in which holes are injected by photoemission process instead of direct charge carrier injection via metal electrode. The accumulated charges on the PI surface in the OFF state abruptly flow across the PI film when the bias voltage of a back electrode reaches a specific value, indicating that the film is changed to the ON state. Core level and x-ray absorption spectra probed at charge injection region via photoemission process do not show any evidences implying structural modification of TP6F PI during the phase change. Whereas, in valence band spectra, the highest occupied molecular orbital (HOMO) is shifted toward Fermi level, responsible for improved hole-mobility of TP6F PI of ON state.

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Pharmacokinetic Analysis of the Effect of Extrahepatic Cholestasis by Common Bile Duct Ligation on Hepatic Function in Rats (총수담관 결찰에 의한 간외 담즙분비정체가 흰쥐의 간기능에 미치는 영향에 대한 약물속도론적 분석)

  • Lee, Yong-Bok;Na, Eun-Yeong;Joo, Eun-Hee;Jeong, Sug-Jin;Koh, Ik-Bae
    • Journal of Pharmaceutical Investigation
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    • v.25 no.3
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    • pp.193-204
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    • 1995
  • In order to examine the effect of extrahepatic cholestasis induced by common bile duct ligation on the hepatic function, the pharmacokinetics of antipyrine and d-propranolol were investigated in rats. In addition, in an attempt to observe the degree of direct hepatic injury, light and electron microscopic observations and conventional pathologic test using serum were performed. Five days after common bile duct ligation, antipyrine(15 mg/kg) and d-propranolol(3 mg/kg) were intravenously administrated to the rats, respectively. The total clearances of antipyrine and d-propranolol were significantly(p<0.05) decreased. Because hepatic clearance of antipyrine poorly extracted by the liver and that of d-propranolol highly extracted by the liver are respectively dependent on the hepatic intrinsic clearance and the hepatic blood flow, it may be concluded that extrahepatic cholestasis following five days after common bile duct ligation decreased the hepatic intrinsic clearance and the hepatic blood flow. SGPT, SGOT, cholesterol, bilirubin(total bilirubin, direct bilirubin) and alkaline phosphatase were significantly increased(p<0.05). The proliferation of bile ducts was prominent, and degeneration and necrosis of hepatocytes were observed by light microscope. Also, ultrastructurally, bile canaliculi were containing the amorphous materials and losing microvilli, and SER and RER in hepatocytes were dilated and vacuolated.

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Triboelectric Nanogenerator Utilizing Metal-to-Metal Surface Contact (금속-금속 표면 접촉을 활용한 정전 소자)

  • Chung, Jihoon;Heo, Deokjae;Lee, Sangmin
    • Composites Research
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    • v.32 no.6
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    • pp.301-306
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    • 2019
  • Triboelectric nanogenerator (TENG) is one of the energy harvesting methods in spotlight that can convert mechanical energy into electricity. As TENGs produce high electrical output, previous studies have shown TENGs that can power small electronics independently. However, recent studies have reported limitations of TENG due to air breakdown and field emission. In this study, we developed a triboelectric nanogenerator that utilizes the metal-to-metal surface contact to induce ion-enhanced field emission and electron avalanche for electrons to flow directly between two electrodes. The average peak open-circuit voltage of this TENG was measured as 340 V, and average peak closed-circuit current was measured as 10 mA. The electrical output of this TENG has shown different value depending on the surface charge of surface charge generation layer. The TENG developed in this study have produced RMS power of 0.9 mW, which is 2.4 times higher compared to conventional TENGs. The TENG developed in this study can be utilized in charging batteries and capacitors to power portable electronics and sensors independently.

Structural, optical, and electrical properties on Cu(In,Ga)$Se_2$ thin-films with Cu-defects and In/(In+Ga) ratio (Cu(In,Ga)$Se_2$ 박막의 Cu 결함 및 In, Ga 비율의 변화에 따른 구조적, 광학적, 전기적 특성 연구)

  • Jeong, A.R.;Kim, G.Y.;Jo, W.;Jo, H.J.;Kim, D.H.;Sung, S.J.;Kang, J.K.;Lee, D.H.;Nam, D.H.;Cheong, H.
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.47.1-47.1
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    • 2011
  • We report on a direct measurement of two-dimensional chemical and electrical distribution on the surface of photovoltaic Cu(In,Ga)$Se_2$ thin-films using a nano-scale spectroscopic and electrical characterization, respectively. The Raman measurement reveals non-uniformed surface phonon vibration which comes from different compositional distribution and defects in the nature of polycrystalline thin-films. On the other hand, potential analysis by scanning Kelvin probe force microscopy shows a higher surface potential or a small work function on grain boundaries of the thin-films than on the grain surfaces. This demonstrates the grain boundary is positively charged and local built-in potential exist on grain boundary, which improve electron-hole separation on grain boundary. Local electrical transport measurements with scanning probe microscopy on the thin-films indicates that as external bias is increases, local current is started to flow from grain boundary and saturated over 0.3 V external bias. This accounts for carrier behavior in the vicinity of grain boundary with regard to defect states. We suggest that electron-hole separation at the grain boundary as well as chemical and electrical distribution of polycrystalline Cu(In,Ga)$Se_2$ thin-films.

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Effect of AC Electric Fields on Flow Instability in Laminar Jets (층류제트유동 불안정성에 미치는 교류 전기장 효과)

  • Kim, Gyeong Taek;Lee, Won June;Cha, Min Suk;Park, Jeong;Chung, Suk Ho;Kwon, Oh Boong;Kim, Min Kuk;Lee, Sang Min
    • Journal of the Korean Society of Combustion
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    • v.21 no.3
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    • pp.1-6
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    • 2016
  • The effect of applied electric fields on jet flow instability was investigated experimentally by varying the direct current (DC) voltage and the alternating current (AC) frequency and voltage applied to a jet nozzle. We aimed to elucidate the origin of the occurrence of twin-lifted jet flames in laminar jet flow configuration, which occur when AC electric fields are applied. The results indicate that a twin-lifted jet flames originates from cold jet instability, caused by interactions between negative ions in the jet flow via electron attachment as $O_2+e{\rightarrow}O_2{^-}$ when AC electric fields are applied. This was confirmed by experiments in which a variety of gaseous jets were ejected from a nozzle to which DC voltages and AC frequencies and voltages were applied, with ambient air between two deflection plates connected to a DC power source. Experiments in which jet flows of several gases were ejected from a nozzle and AC electric fields were applied in coflow-nitrogen provided further evidence. The flow instability occurred only for oxygen and air jets. Additionally, jet instability occurred when the applied frequency was less than 80 Hz, corresponding to the characteristic collision response time. The effect of AC electric fields on the overall structure of the jet flows is also reported. Based on these results, we propose a mechanism to reduce jet flow instability when AC electric fields are applied to the nozzle.

Hydrogen Plasma Characteristics for Photoresist Stripping Process in a Cylindrical Inductively Coupled Plasma

  • Yang, Seung-Kook;Cho, Jung Hee;Lee, Seong-Wook;Lee, Chang-Won;Park, Sang-Jong;Chae, Hee-Sun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.4
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    • pp.387-394
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    • 2013
  • As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a $120{\Phi}$ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the $V_{rms}$ and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of $H_2$ gas in mixed $H_2/N_2$ plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing $H_2$ gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.

The Effect of Die Cooling on the Surface Defects of the Aluminum 7075 Extrudates (알루미늄 7075 합금의 압출에서 금형 냉각이 압출재의 표면 결함에 미치는 영향)

  • S.Y., Lee
    • Journal of the Korean Society for Heat Treatment
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    • v.35 no.6
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    • pp.319-326
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    • 2022
  • Direct extrusions of an aluminum 7075 alloy were carried out using 1500 ton machine with and without die cooling system. Cooling of extrusion die has been performed by the flow of liquid nitrogen and controlled by laser thermometer. Billet was 180 mm in diameter and 500 mm in length. The preheating temperatures of billet, container and die were 390℃, 400℃ and 450℃, respectively. Ram speed was kept with 1.25 mm/sec first. The change of ram speed was carried out during extrusion according to the observation of surface defects such as crack or tearing. Extrudates of 8.3 m in length, 100 mm in width and 15 mm in thickness were obtained to observe and analyze surface defects by optical microscopy and EBSD (Electron BackScattered Diffraction). In case of extrusion without die cooling cracks on the surface and tearing in the corner of extrudate occurred in the middle stage and developed in size and frequency during the late stage of extrusion. At the extrusion with die cooling the occurrence of defects could be suppressed on the most part of extrudate. EBSD micrographs showed that cracks and tearings have been resulted from the same origin. Surface defects were generated at the boundaries of grains formed by secondary recrystallization due to surface overheating during extrusion.

A Solid-Contact Indium(III) Sensor based on a Thiosulfinate Ionophore Derived from Omeprazole

  • Abbas, Mohammad Nooredeen;Amer, Hend Samy
    • Bulletin of the Korean Chemical Society
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    • v.34 no.4
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    • pp.1153-1159
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    • 2013
  • A novel solid-contact indium(III)-selective sensor based on bis-(1H-benzimidazole-5-methoxy-2-[(4-methoxy-3, 5-dimethyl-1-pyridinyl) 2-methyl]) thiosulfinate, known as an omeprazole dimer (OD) and a neutral ionophore, was constructed, and its performance characteristics were evaluated. The sensor was prepared by applying a membrane cocktail containing the ionophore to a graphite rod pre-coated with polyethylene dioxythiophene (PEDOT) conducting polymer as the ion-to-electron transducer. The membrane contained 3.6% OD, 2.3% oleic acid (OA) and 62% dioctyl phthalate (DOP) as the solvent mediator in PVC and produced a good potentiometric response to indium(III) ions with a Nernstian slope of 19.09 mV/decade. The constructed sensor possessed a linear concentration range from $3{\times}10^{-7}$ to $1{\times}10^{-2}$ M and a lower detection limit (LDL) of $1{\times}10^{-7}$ M indium(III) over a pH range of 4.0-7.0. It also displayed a fast response time and good selectivity for indium(III) over several other ions. The sensor can be used for longer than three months without any considerable divergence in potential. The sensor was utilized for direct and flow injection potentiometric (FIP) determination of indium(III) in alloys. The parameters that control the flow injection method were optimized. Indium(III) was quantitatively recovered, and the results agreed with those obtained using atomic absorption spectrophotometry, as confirmed by the f and t values. The sensor was also utilized as an indicator electrode for the potentiometric titration of fluoride in the presence of chloride, bromide, iodide and thiocyanate ions using indium(III) nitrate as the titrant.

Synthesis of Graphene on Hexagonal Boron Nitride by Low Pressure Chemical Vapor

  • Han, Jae-Hyun;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.391-392
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    • 2012
  • Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7%) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99%) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

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Shape Characteristics of Exhaust Plume of Dual-Stage Plasma Thruster using Direct-Current Micro-Hollow Cathode Discharge (직류 마이크로 할로우 음극 방전을 이용한 이단 마이크로 플라즈마 추력기의 배기 플룸의 형상 특성)

  • Ho, Thi Thanh Trang;Shin, Jichul
    • Journal of the Korean Society of Propulsion Engineers
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    • v.20 no.3
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    • pp.54-62
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    • 2016
  • Micro plasma thruster (${\mu}PT$) was studied experimentally with a dual-stage micro-hollow cathode discharge (MHCD) plasma. Electrostatic-like acceleration exhibiting more directional and elongated exhaust plume was achieved by a dual layer MHCD at the total input power less than 10 W with argon flow rate of 40 sccm. V-I characteristic indicated that there was an optimal regime for dual-stage operation where the acceleration voltage across the second stage remained constant. Estimated exhaust plume length showed a similar trend to the analytic estimate of exhaust velocity which scales with an acceleration voltage. ${\mu}PT$ with multiple holes exhibited similar performance with single-hole thruster indicating that higher power loading is possible owing to decreased power through each hole. Boltzmann plot of atomic argon spectral lines showed average electron excitation temperature of about 2.6 eV (~30,170 K) in the exhaust plume.